• 한국세라믹학회지
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• 제33권12호
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• pp.1301-1310
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• 1996

Generally it requires high sintering temperatures more than 135$0^{\circ}C$ to make semiconductive BaTiO3 ceramics. Also it is very difficult to achieve a homogeneous mixing in solid-state reaction method. Therefore the liquid phase distributed to non-uniform dilute the characteristics of PTCR. In order to improve the uniformity this study is used the sol-gel coating method. Using this method we studied the new manufacturing process that had a high reproducibility and mass production capability. Tetraethyl orthosilicate (TEOS) was used as a source of Si. The semiconductive BaTiO3 ceramics which was produced by sol-gel method for the SiO2 addition and sintered between 124$0^{\circ}C$ and 130$0^{\circ}C$ showed almost same resistivity at room temperature among 125$0^{\circ}C$ and 130$0^{\circ}C$. As the results We could be sintered the semiconducting BaTiO3 ceramics at lower temperature even at 125$0^{\circ}C$ maintaining the same specific resistivity ratio ($\rho$max/$\rho$min) at 130$0^{\circ}C$. The specific resistivity both below and above the Curie temperature were increased by slow cooling and the steepness of the plots in the reasion of transition from low to high resistance increased as the cooling rate decreased.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.149-153
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• 2005

We have investigated thermal properties showed by changing the content of carbon black which is the component parts of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the nine of those for measurement. Heat capacity (${\Delta}$H), glass transition temperature (Tg) and melting temperature (Tm) were measured by DSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from -100($^{\circ}C$) to 100($^{\circ}C$), and heating rate was 4($^{\circ}C$/min). And then thermal diffusivity was measured by LFA 447. The dimension of measurement temperature was 25[$^{\circ}C$]. Glass transition temperature of specimens was showed near -25[$^{\circ}C$] and the heat capacity and the melting temperature from the DSC results were simultaneously decreased according to increasing the content of carbon black, while thermal diffusivity was increased according to increasing the content of carbon black. Because ionic impurities of carbon black having Fe, Co, Mn, Al and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.154-160
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• 2005

We have investigated thermal properties showed by changing the content of carbon black which is the component parts of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the nine of those for measurement. Density of specimens was measured by density meter, and then stress-strain of specimens was measured by TENSOMETER 2000. A speed of measurement was 200[mm/min], ranges of stress and strain were 400(Kgf/$cm^2$) and 600[$\%$]. In addition, tests of stress-strain were progressed by aging specimens at air oven. Finally surface profile was shown in order to looking for protrusion of specimens by using smoothness tester. Density was highly measured according to increasing the content of carbon black from this experimental result, and stress was decreased, while strain was increased according to increasing the content of carbon black. And stress-strain were decreased some after aging because of oxidation reaction of chemical defect. Lastly surface of specimens smoothed generally.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.119-125
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• 2013

In this paper, semiconducting shield specimens for a DC cable is fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ratio of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• 한국수소및신에너지학회논문집
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• 제1권1호
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• pp.48-54
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• 1989

Semiconductive property of the passivating $TiO_2$ film was investigated by measuring the impedance of passivated titanium electrode in a 0.1 N NaOH solution. The passive film was prepared galvanostatically with $10mA/cm^2$ at formation potential of 50 V in a 1 N $H_2SO_4$ solution. The impedance measurement was conducted by superimposing an ac voltage of 5 m V amplitude with the frequency ranging from 5 to 10000 Hz on a dc bias (applied potential). The donor distribution in the film was depicted from the analysis of the non-linear slope of Mott-Schottky plot. The region with nearly constant concentration of donors near the electrolyte/film interface amounts at about 60 percent of the total film thickness and donor concentration increases largely with distance from the surface in an inner region near the film/metal interface. In a region of the film/metal interface the donor concentration showed a frequency dependence greater than in a region of the electrolyte/film interface. The result of donor concentration against frequency suggests a transition from crystalline to amorphous state with distance from the electrolyte/film interface in the passivating $TiO_2$ films. This is also confirmed by the ac conductivity measurement.

• 한국전기전자재료학회논문지
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• 제21권4호
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• pp.348-353
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• 2008

Most of the high voltage insulation systems, such as the power cable joint having hetero interface, are composed of more than two different insulators to improve insulating performance. The partial discharge(PD) in these hetero interface is expected to affect the total insulation performance. Thus, it is important to study electrical properties on these interfaces. This study described the influence of copper and semiconductive substance defects on $\Phi$-q-n distribution between the interface of the model cable joints to classify PD source. PD was sequentially detected for 600 cycles of the applied voltage. The K-means cluster analysis has been analyzed to investigate the $\Phi$-q-n distribution. The skewness-kurtosis(Sk-Ku) plot from K-means clustering results was defined to quantify cluster distribution and classify distribution patterns. The Sk-Ku plot is composed of skewness and kurtosis along abscissa and ordinate which indicate the asymmetry and the sharpness of distribution. As a result of the Sk-Ku plot, it was confirmed that the data was distributed in 1st 2nd and 3rd quadrant at copper foreign substance defect, but in case of semiconductive foreign substance, the data was distributed in 2nd quadrant only.

• Corrosion Science and Technology
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• 제15권4호
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• pp.171-181
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• 2016

In this work, synergistic corrosion inhibition effect of nitrite and 3 kinds of ethanolamines on ductile cast iron using chemical and electrochemical methods was evaluated. This work attempts to clarify the synergistic effect of nitrite and ethanolamines. The effects of single addition of TEA, DEA, and MEA, and mixed addition of nitrite plus TEA, DEA or MEA on the corrosion inhibition of ductile cast iron in a tap water were evaluated. A huge amount of single addition of ethanolamine was needed. However, the synergistic effect by mixed addition was observed regardless of the combination of nitrite and triethanolamines, but their effects increased in a series of MEA + nitrite > DEA + nitrite > TEA + nitrite. This tendency of synergistic effect was attributed to the film properties and polar effect; TEA addition couldn't form the film showing high film resistance and semiconductive properties, but DEA or MEA could build the film having relatively high film resistance and n-type semiconductive properties. Moreover, it can be explained that this behaviour was closely related to electron attractive group within the ethanolamines, and thus corrosion inhibition power depends upon the number of the electron attractive group of MEA, DEA, and TEA.

• 한국세라믹학회지
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• 제28권3호
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• pp.215-224
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• 1991

The synthesis of SrTiO3 powders having high purity and homogeneous submicron particle size was attempted by the oxalate method. The microstructure and dielectric properties of SrTiO3 based boundary layer capacitor (BLC) were investigated. Strontium titanyl oxalate[SrTiO(C2O4)2.4H2O] was prepared from the mixing solution of (Sr, Ti) using oxalic acid(H2C2O4) as a precipitating agent at 8$0^{\circ}C$. The crystalline SrTiO3 powder was obtained by thermal decomposition of the precipitate above $600^{\circ}C$. The crystalline SrTiO3 powder containing Nb2O5 as a dopant, TiO2 and SiO2 as additives was sintered at 1360~144$0^{\circ}C$ in the reducing atmosphere to get semiconductive SrTiO3. Insulating material containing PbO-Bi2O3-B2O3 frit was printed on the sintered semiconductive SrTiO3 and fired at 120$0^{\circ}C$ for 2h to get the grain boundary diffusion.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.49-55
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• 2013

In this paper, semiconducting shield specimens for a DC cable os fabricated and characterized by measurement of volume resistance, tensile strength, and the coefficient of expansion to show the electrical and mechanical characteristics of the semiconducting shield. Due to the PTC phenomenon, the volume resistance at $25^{\circ}C$ increases rapidly in comparison to the volume resistance at $90^{\circ}C$. Since the compounding ration of carbon black is low, the tensile strength and density become lower and the coefficient of expansion is increased. As the general specification of the tensile strength and density is $0.8kgf/mm^2$ and 150%, respectively, the fabricated specimen in this paper has excellent mechanical characteristic.

• Bulletin of the Korean Chemical Society
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• 제7권1호
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• pp.29-35
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• 1986

An empirical formula for semiconductive metal oxides is proposed relating nonstoichiometric value x to a temperature or an oxygen partial pressure such that experimental data can be represented more accurately by the formula than by the well-known Arrhenius-type equation. The proposed empirical formula is log x = A + $B{\cdot}1000/T\;+\;C{\cdot}$exp$(-D{\cdot}1000/T)$ for a temperature dependence and $log\;{\times}\;=a\;+b{\cdot}log\;Po_2\;+\;c{\cdot}$exp$(-d{\cdot}log\;Po_2)$ for an oxygen partial pressure dependence. The A, B, C, D and a, b, c, d are parameters which are evaluated by means of a best-fitting method to experimental data. Subsequently, this empirical formula has been applied to the n-type metal oxides of $Zn_{1+x}O,\; Cd_{1+x}O,\;and\;PrO_{1.8003-x}$, and the p-type metal oxides of $CoO_{1+x},\; FeO_{1+x},\;and\;Cu_2O_{1+x}$. It gives a very good agreement with the experimental data through the best-fitted parameters within 6% of relative error. It is also possible to explain approximately qualitative characters of the parameters A, B, C, D and a, b, c, d from theoretical bases.