Thermal Properties of Semiconductive Materials(Shield) by Sonic Impurities in Carbon Black

카본블랙내 이온성 불순물들에 따른 반도전 재료(층)의 열적특성

  • 이용성 (원광대학교 전기전자 및 정보공학부) ;
  • 최용성 (원광대학교 전기전자 및 정보공학부) ;
  • 박대희 (원광대학교 전기전자 및 정보공학부) ;
  • 이경용 (원광대학교 전기전자 및 정보공학부)
  • Published : 2005.04.01

Abstract

We have investigated thermal properties showed by changing the content of carbon black which is the component parts of semiconductive shield in underground power transmission cable. Specimens were made of sheet with the nine of those for measurement. Heat capacity (${\Delta}$H), glass transition temperature (Tg) and melting temperature (Tm) were measured by DSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from -100($^{\circ}C$) to 100($^{\circ}C$), and heating rate was 4($^{\circ}C$/min). And then thermal diffusivity was measured by LFA 447. The dimension of measurement temperature was 25[$^{\circ}C$]. Glass transition temperature of specimens was showed near -25[$^{\circ}C$] and the heat capacity and the melting temperature from the DSC results were simultaneously decreased according to increasing the content of carbon black, while thermal diffusivity was increased according to increasing the content of carbon black. Because ionic impurities of carbon black having Fe, Co, Mn, Al and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

Keywords

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