• BMB Reports
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• v.43 no.11
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• pp.732-737
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• 2010

RNA interference is a post-transcriptional silencing mechanism triggered by the bioavailability and/or exogenous introduction of double-stranded RNA (dsRNA) into cells. Here we describe a novel method for the synthesis of siRNA in a single vessel. The method employs in vitro transcription and a single-stranded DNA (ssDNA) template and design, which incorporates upon self-annealing, two promoters, two templates, and three loop regions. Using this method of synthesis we generated efficacious siRNAs designed to silence both exogenous and endogenous genes in mammalian cells. Due to its unique design the single-stranded template is easily amenable to adaptation for attachment to surface platforms for synthesis of siRNAs. A siRNA synthesis platform was generated using a 3' end-biotinylated ssDNA template tethered to a streptavidin coated surface that generates stable siRNAs under multiple cycles of production. Together these data demonstrate a unique and robust method for scalable siRNA synthesis with potential application in RNAi-based array systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.335-338
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• 2003

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-layer dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding $1\;{\mu}m$ in size, which could cause micro-scratch on the wafer surface. In this paper, we have studied aging effect the of CMP sin as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.240-240
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• 2010

반사 방지막은 LEDs, 태양전지, 센서 등의 광전소자의 효율을 향상시키는데 사용되고 있다. 일반적으로 사용되는 단층 또는 다층 박막의 반사방지막은 thermal expansion mismatch, adhesion, stability 등의 문제점을 가지고 있다. 따라서, 단층 또는 다층 박막의 반사방지막 대신에 파장이하의 주기를 갖는 구조(subwavelength structure, SWS)의 반사방지막 연구가 활발히 진행되고 있다. 입사되는 태양 스펙트럼의 파장보다 작은 주기를 갖는 SWS 구조는 Fresnel 반사율을 감소시켜 빛의 손실을 줄일 수 있다. 이러한 SWS 반사 방지막을 제작하기 위해서는 에칭 마스크가 필요하다. 에칭 마스크 제작을 위해서 사용되는 장비로는 홀로그램, 전자빔, 나노임프린트와 같은 리소그라피 방법이 있으나, 이들은 제작 비용이 고가이며 복잡한 기술을 필요로 한다. 따라서 본 실험에서는 리소그라피 방법보다 간단하고 저렴한 self-assembled Au 나노 입자 에칭 마스크를 이용한 실리콘 SWS 반사 방지막을 제작하여 구조적 및 광학적 특성을 연구하였다. Au박막은 열증발증착(thermal evaporator)법에 의해 실리콘 기판 위에 증착되었고, 급속 열처리(rapid thermal annealing, RTA)를 통해 Au 나노입자 에칭 마스크를 형성시켰다. 실리콘 SWS 반사방지막은 식각 가스 $SiCl_4$를 기반의 유도결합 플라즈마(inductively coupled plasma, ICP) 장비를 사용하여 제작되었다. Au 나노 입자의 마스크 패턴 및 에칭된 실리콘 SWS 프로파일은 scanning electron microscope를 사용하여 관찰하였으며, UV-Vis-NIR spectrophotometer를 사용하여 300-1100 nm 파장 영역에 따른 반사율을 측정하였다. ICP 에칭 조건을 변화시켜 가장 낮은 반사율을 갖는 최적화된 실리콘 SWS 반사방지막을 도출하였다. 최적화된 구조에 대해서, 실리콘 SWS 반사방지막은 벌크 실리콘 (>35%)보다 더 낮은 5% 이하의 반사율을 나타냈다.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.12-14
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP). process was required for the global planarization of inter-metal dielectric (IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Micro-scratches are generated by agglomerated slurry, solidified and attached slurry in pipe line of slurry supply system. It is well known that the presence of hard and larger size particles in the CMP slurries increases the defect density and surface roughness of the polished wafers. In this paper, we have studied. aging effect the of CMP slurry as a function of particle size. We prepared and compared the self-developed silica slurry by adding of abrasives before and after annealing. As our preliminary experiment results, we could be obtained the relatively stable slurry characteristics comparable to original silica slurry in the slurry aging effect.

• Polymer(Korea)
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• v.30 no.6
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• pp.563-567
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• 2006

Poly(vinyl alcohol) (PVA) and gelatin (GEL) blend membranes were prepared by solution casting method under a high electric field. SEM observation of the membrane showed that gelatin rich domains were elongated and oriented to the direction of the applied electric field in PVA matrix. This can be attributed to the electrostatic emulsifying effects due to a reduction in interfacial tension. In addition, it was observed through WAXD and swelling measurements that the degree of crystallinity of membranes increased with applied electric field strength. This may be interpreted to be caused by the orientation effect of GEL domains in the blend membrane, and the self-annealing effect due to some heat generated from high electric field during casting.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.112-112
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• 2013

Well-defined surfaces of single-crystalline solid materials are starting points of self-organizationof nanostructures and chemical reactions controlled in nanoscale. Although highly ordered atomicarrangement can be obtained on semiconductor surfaces, they can be maintained only in vacuumand not in air or in aqueous environment. Since single-crystalline metal oxide surfaces arechemically stable and no further oxidation occurs, their atomic structures can be utilized fornanofabrication in liquid processes, nanoelectrochemistry and nanobiotechnology. Sapphire is oneof the most stable metal oxides and its crystalline quality is excellent, as can be applied to electronicdevices that require ultralow defect densities. We recently found that chemical phase separationoccurs on sapphire surfaces by annealing processes and the formed nanodomains exhibit specificproperties in air and in water [1,2]. In our experiments, highly selective and controllable adsorptionof various protein molecules is observed on the phase-separated surfaces though the materials andcrystallographic orientations are identical [3,4]. Planar lipid bilayers supported on thephase-separated sapphire surface also exhibit a specific formation site selectivity [5]. Chemicalnanodomains appear on other metal-oxide surfaces, such as well-ordered titania surfaces. Wedemonstrate that surface chemistry of the nanodomains can be characterized in aqueousenvironment using atomic force microscopy equipped with colloidal tips and then show adsorptionand desorption behaviors of various proteins on the phase-separated surfaces.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• Industrial Engineering and Management Systems
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• v.11 no.3
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• pp.288-298
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• 2012

Lot sizing and shipment scheduling are two interrelated decisions made by a manufacturing plant and a third-party logistics distribution center. This paper analyzes a dynamic inbound ordering problem and shipment problem with a freight container cost, in which the order size of multiple products and single container type are simultaneously considered. In the problem, each ordered product placed in a period is immediately shipped by some freight containers in the period, and the total freight cost is proportional to the number of containers employed. It is assumed that the load size of each product is equal and backlogging is not allowed. The objective of this study is to simultaneously determine the lot-sizes and the shipment schedule that minimize the total costs, which consist of production cost, inventory holding cost, and freight cost. Because the problem is NP-hard, we propose three meta-heuristic algorithms: a simulated annealing algorithm, a genetic algorithm, and a new population-based evolutionary meta-heuristic called self-evolution algorithm. The performance of the meta-heuristic algorithms is compared with a local search heuristic proposed by the previous paper in terms of the average deviation from the optimal solution in small size problems and the average deviation from the best one among the replications of the meta-heuristic algorithms in large size problems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.152-153
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• 1994

A recessed $n^{+}$-p junction diode with the serf-aligned structure is proposed and fabricated by using the polysilicon as an $n^{+}$ diffusion source. The diode structure can be applicable to the emitter-base formation of high performance bipolar device and the $n^{+}$ polysilicon emitter has an important effect on the device characteristics. The considered parameters for the polysilicon formation are the deposition condition $As^{+}$ dose for the doping of the polysilicon, and the annealing using RTP system. The vertical depth profiles of the fabricated diode are obtained by SIMS. The eleotrical characteristics are analyzed in trims of the ideality factor of diode (n), contact resistance arid reverse leakage current. The $As_{+}$ dose for the formation of good junction is current. The $As^{+}$ dose for the formation of goodjunctions is about 1∼2${\times}$$10^{16}$$cm^{-2}$ at given RTA condition ($1100^{\circ}C$, 10 sec). The $n^{+}$-p structure is successfully applied to the self-aligned bipolar device adopting a single polysilicon technology.