Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2003.07a
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- Pages.335-338
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- 2003
Aging effect of annealed oxide CMP slurry
열처리된 산화막 CMP 슬러리의 노화 현상
- Lee, Woo-Sun (Chosun Univ.) ;
- Shin, Jae-Wook (Chosun Univ.) ;
- Choi, Kwon-Woo (Chosun Univ.) ;
- Ko, Pil-Ju (Chosun Univ.) ;
- Seo, Yong-Jin (Daebul Univ.)
- Published : 2003.07.10
Abstract
Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-layer dielectrics (ILD). Especially, defects such as micro-scratch lead to severe circuit failure which affect yield. CMP slurries can contain particles exceeding
Keywords
- CMP(chemical mechanical polishing);
- ILD(inter-layer dielectrics);
- aging effect;
- micro-scratch;
- IMD(inter-metal dielectric)