• Journal of Arbitration Studies
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• v.26 no.2
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• pp.3-25
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• 2016

Lately each country tends to provide neutrality and ease of enforcement in order to settle disputes related to international trade through commercial arbitration. In order to expand the use of arbitration systems, most countries accept arbitration agreements as an effective tool agreed between parties that express their intent to settle disputes by the arbitration. It is applied equally to selective arbitration agreements and parties can select either arbitration or lawsuit to settle disputes based on the contract intent for selective arbitration agreements. However, China does not admit the effectiveness of selective arbitration agreements. Chinese courts regard selective arbitration agreements as not valid because the contract of a selective arbitration agreement between parties is not a definite expression to only use the arbitration and there is no exclusion of court jurisdiction. Therefore, the study attempts to consider effective conditions for selective arbitration agreements in the Chinese arbitration act and other relevant regulations, and also verifies the judgment by Chinese courts on relevant disputes. As a result, the study explores some problems and implications of Chinese selective arbitration agreements and suggests some precautions in case Korean companies pursue selective arbitration agreements with Chinese enterprises and investors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.234-234
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• 2010

Most high efficiency silicon solar cells use a passivated selective emitter. It have been an important research subject for crystalline silicon solar cells for decades. It is being used in production for high efficiency solar cells. Most of the selective emitter process require expensive extra masking, etching steps, and a double diffusion process making selective emitters not cost effective. In this paper, we study method for single diffusion step selective emitter process as an alternative to not cost effective double diffusion process. Cost effective selective emitter that the efficiency should be increased significantly (mare than 0.2%) and that the process should simple, robust and cheap.

• Journal of Plant Biotechnology
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• v.3 no.3
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• pp.113-121
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• 2001

The use of a marker gene in a transformation process aims to give a selective advantage to the transformed cells, allowing them to grow faster and better, and to kill the non-transformed cells. In general, the selective gene is introduced into plant genome along with the genes of interest. In some cases, the marker gene can be the gene of interest that will confer an agronomic characteristic, such as herbicide resistance. In this review we list and discuss the use of the most common selective marker genes on plant transformation and the effects of their respective selective agents. These genes could be divided in categories according their mode of action: genes that confer resistance to antibiotics and herbicides; and genes for positive selection. The contention of the marker gene flow through chloroplast transformation is further discussed. Moreover, strategies to recover marker-free transgenic plants, involving multi-auto-transformation (MAT), co-transformation, site specific recombination and intragenomic relocation of transgenes through transposable elements, are also reviewed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1060-1070
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• 2003

The frequency selective surface for use in Ka/Ku band parabolic antenna of domestic satellite communications is proposed. The frequency selective surface structure consists of the infinite periodic arrays of the triple square loop slot element with narrow width on the honeycomb structure of multi-layered dielectric. The frequency selective surface is fabricated and measured. The good agreement is obtained between theory and experiment. It is demonstrated that the frequency selective surface passes 14/12 GHz band wave while reflecting 30/20 GHz band wave as required.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.79-82
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• 2000

This paper describes a delay locked loop with selective starting point for use in a high-frequency systems. SSRDLL (selective starting point RDLL) has been simulated in a 0.25$\mu\textrm{m}$ standard n-well CMOS process parameter to realize a fast lock-on time. This DLL is shown to be insensitive to variations in PVTL. The simulated lock time of the proposed SSRDLL is within 4 clock cycles at 333㎒ clock input.

• Journal of the Korean Solar Energy Society
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• v.26 no.1
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• pp.57-64
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• 2006

Cr-CrO cermet solar selective coatings with a double cermets layer film structure were prepared using a special direct current (dc) magnetron sputtering technology. The typical films structures from surface to bottom substrate were measured to be an $Al_2O_3$ anti-reflection layer on a double Cr-CrO cermet layer on an Al metal infrared reflection layer. Optical properties of optimized Cr-CrO cermet solar selective coating were absorptance (${\alpha}$) = 0.95 and emittance (${\varepsilon}$) = 0.10 ($100^{\circ}C$). Atomic force microscopy (AFM) image showed that Cr-CrO cermet film was very smooth and their grain size was also very small The results of thermal stability test showed that the Cr-CrO cermet solar selective coatings were stable for use at temperature of $400^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.39 no.7
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• pp.692-701
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• 1990

New selective tungsyen deposition deposition on silicon process is described which makes use of a previously unreported, alternating cyclic,

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.1010-1017
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• 2011

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. When fabricated Ni/Cu plating metallization cell with a selective emitter structure, it has been shown that efficiencies of up to 18% have been achieved using this technology.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.04a
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• pp.181-185
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• 1996

Rapid prototyping is becoming an increasingly importnat techniuqe involved in the design cycles of modern industry. The majority of the rapid prototyping systems currently available use photo-reactive resins and waxes as the raw materials. The models produced by these systems often have relatively poor mechanical and physical properties and as such have a limited application to the production of advance prototypes but are excellently suited to the manufacture of engineering prototyes. This work identifies the need to produed near production grade advance prototypes from a variety of metals and a novel prototyping process based on the techniques of selective laser sintering and conventional machining is proposed. The integration of a carbon dioxide laser and a conventional machine tool to create the opto-mechanical by multi-layer sintering and some of the problems involved are also discussed.