• 한국정밀공학회지
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• 제20권2호
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• pp.218-225
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2002년도 추계학술대회 논문집
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• pp.164-167
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• 2002

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO$_2$, GaAs, CaAsP, and AlCaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.407-408
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• 2009

• 대한기계학회논문집A
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• 제27권8호
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• pp.1309-1316
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.222-222
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• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In older to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber and precision servo mechanism in order to dice a semiconductor wafer.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1995년도 춘계학술대회 논문집
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• pp.70-80
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• 1995

광학용 정밀유리와 건축용 패널유리 전문가공을 위한 CNC Glass Scribing Machine 을 개발하였다. 이제까지는 고품질의 고가기계를 수입하여 사용하던가 간이 자동화된 자체 개발기계를 사용하여 여유있게 절단한후 연삭가공에서 정밀칫수를 맞추는 작업을 해왔었다. 그러나 금번 개발된 기계를 사용하여 작업한 결과 연삭공정을 생략할수 있음은 물론 가공칫 수 정밀도도 일급 수준을 얻을수 있었다. 그러나 아직 세계일류의 품질과 성능은 도달치 못 했다. 생산성 향상을 위한 이송속도 향상설계와 가공칫수 정밀도의 초일급 달성을 위한 초 정밀설계를 통해 품질과 성능에서 세계일류의 상품화 개발과정을 준비중에 있다. 본논문에 서는 본 기계의 개발과정 및 주요요소기술들과 개발 결과를 정리하였다.

• 한국생산제조학회지
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• 제7권1호
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• pp.126-134
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• 1998

In order to increase the modeling power and productivity of CAD/CAM systems, demands for customization of CAD/CAM system increased. Customization of a CAM system involves making it easier to learn and use, adding new modeling features not supported in a general purpose CAM system, and providing parametric inputting mechanism. A customization from a commercial CAM system (OMEGA) has implemented for two dimensional free curve CNC glass scribing machine of medium size company in Cheonan. A CAD technician who has no CAM experience can operate this customized CAM system satisfactorily.

• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 1996년도 춘계학술대회 논문집
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• pp.36-40
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• 1996

• 제어로봇시스템학회논문지
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• 제8권5호
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.

• 한국정밀공학회지
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• 제22권12호
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• pp.184-189
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• 2005

An experimental study of the femtosecond laser machining of Si materials was carried out. Direct laser machining of the materials for the feature size of a few micron scale has the advantage of low cost and simple process comparing to the semiconductor process, E-beam lithography, ECM and other machining process. Further, the femtosecond laser is the better tool to machine the micro parts due to its characteristics of minimizing the heat affected zone(HAZ). As a result of line cutting of Si, the optimal condition had the region of the effective energy of 2mJ/mm-2.5mJ/mm with the power of 0.5mW-1.5mW. The polarization effects of the incident beam existed in the machining qualities, therefore the sample motion should be perpendicular to the projection of the electric vector. We also observed the periodic ripple patterns which come out in condition of the pulse overlap with the threshold energy. Finally, we could machined the groove with the linewidth of below $2{\mu}m$ for the application of MEMS device repairing, scribing and arbitrary patterning.