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A New Dicing Method for Semiconductor Wafer

반도체 웨이퍼를 위한 새로운 다이싱 방법

  • 차영엽 (원광대학교 기계공학부) ;
  • 최범식 (원광대학교 대학원 기계공학부)
  • Published : 2003.08.01

Abstract

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But products with inferior quality are produced under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer such as SiO2, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism and determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using scriber.

Keywords

References

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