• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.600-600
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• 2013

We have fabricated Cr nanodot Schottky diodes utilizing AAO templates formed on n-Si substrates. Three different sizes of Cr nanodots (about 75.0, 57.6, and 35.8 nm) were obtained by controlling the height of the AAO template. Cr nanodot Schottky diodes showed a rectifying behavior with low SBHs of 0.17~0.20 eV and high ideality factors of 5.6~9.2 compared to those for the bulk diode. Also, Cr nanodot Schottky diodes with smaller diameters yield higher current densities than those with larger diameters. These electrical behaviors can be explained by both Schottky barrier height (SBH) lowering effects and enhanced tunneling current due to the nanoscale size of the Schottky contact. Also, we have fabricated Cr-Si nanorod Schottky diodes with three different lengths (130, 220, and 330 nm) by dry etching of n-Si substrate. Cr-Si nanorod Schottky diodes with longer nanorods yield higher reverse current than those with shorter nanorods due to the enhanced electric field, which is attributed to a high aspect ratio of Si nanorod.

• 전자공학회논문지D
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• 제35D권11호
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• pp.70-77
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• 1998

본 논문에서는 nickel/silicon carbide(Ni/SiC) 접합에 의한 Schottky 다이오드를 제작하고, 그 전기적 특성을 조사하였다. Ni/4H-SiC의 경우, 산화막 모서리 단락을 하였을 때 상온에서 973V의 역방향 항복전압이 측정되었으며 이는 모서리 단락되지 않은 Schottky 다이오드의 역방향 항복전압 430V에 비해 매우 높았다. Ni/6H-SiC Schottky 다이오드의 경우, 산화막으로 모서리 단락시켰을 때와 시키지 않았을 때의 역방향 항복전압은 각각, 920V와 160V 였다. 고온에서의 소자 특성도 매우 좋아서 Ni/4H-SiC Schottky 다이오드와 Ni/6H-SiC Schottky 다이오드 모두 300℃까지 전류 특성의 변화가 거의 없었으며 550℃에서도 양호한 정류 특성을 보였다. 상온에서의 Schottky barrier height와 이상인자(ideality factor) 및 specific on-resistance는 Ni/4H-SiC의 경우는 1.55eV, 1.3, 3.6×10/sup -2/Ω·㎠이었으며 Ni/6H-SiC Schottky 다이오드의 경우에 1.24eV, 1.2, 2.6×10/sup -2Ω·㎠/로 나타났다. 실험 결과 Ni/4H-SiC 및 Ni/6H-SiC Schottky 다이오드 모두 고온, 고전압 소자로서 우수한 특성을 나타냄이 입증되었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.591-592
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• 2006

Schottky diodes for Radio-frequency identification (RFID) tag integration on chip were designed and fabricated using Samsung electronics System LSI standard $0.18{\mu}m$ CMOS process. Schottky diodes were designed as interdigitated fingers array by CMOS layout design rule. 64 types of Schottky diode were designed and fabricated with the variation of finger width, length and numbers with a $0.6{\mu}m$ guard ring enclosing n-well. Titanium was used as Schottky contact metal to lower the Schottky barrier height. Barrier height of the fabricated Schottky diode was 0.57eV. DC current - voltage measurements showed that the fabricated Schottky diode had a good rectifying properties with a breakdown voltage of -9.15 V and a threshold voltage of 0.25 V.

• 대한전자공학회논문지
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• 제25권7호
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• pp.774-779
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• 1988

The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.

• 전자공학회논문지A
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• 제31A권1호
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• pp.71-76
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• 1994

Schottky diodes have been fabricated using the SDB wafer, and their characteristics have been investigated. For comparison, conventional planar and etched most structure were made on the same substrate. The ideality factor and barrier height of the fabricated devices are found to be 1.03 and 0.77eV, respectively. Breakdown volttge of the etched mesa Schottky diode has been increased to 180V. whereas it is 90V for the planar diode. Schottky diode with an etched mesa exhibits twice improvement in breaktown voltage.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.40-40
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• 1999

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.818-824
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• 2006

The effects of high-temperature process required to fabricate the SiC devices on the surface morphology and the electrical characteristics were investigated for 4H-SiC Schottky diodes. The 4H-SiC diodes without a graphite cap layer as a protection layer showed catastrophic increase in an excess current at a forward bias and a leakage current at a reverse bias after high-temperature annealing process. Moreover it seemed to deviate from the conventional Schottky characteristics and to operate as an ohmic contact at the low bias regime. However, the 4H-SiC diodes with the graphite cap still exhibited their good electrical characteristics in spite of a slight increase in the leakage current. Therefore, we found that the graphite cap layer serves well as the protection layer of silicon carbide surface during high-temperature annealing. Based on a closer analysis on electric characteristics, a conductive surface transfiguration layer was suspected to form on the surface of diodes without the graphite cap layer during high-temperature annealing. After removing the surface transfiguration layer using ICP-RIE, Schottky diode without the graphite cap layer and having poor electrical characteristics showed a dramatic improvement in its characteristics including the ideality factor[${\eta}$] of 1.23, the schottky barrier height[${\Phi}$] of 1.39 eV, and the leakage current of $7.75\{times}10^{-8}\;A/cm^{2}$ at the reverse bias of -10 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.305-305
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• 2010

It is known that a pulse of electrons of high kinetic energy (1-3 eV) in metals can be generated with the deposition of external energy to the surface such as in the absorption of light or in exothermic chemical processes. These energetic electrons are not in thermal equilibrium with the metal atoms and are called "hot electrons" The concept of photon energy conversion to hot electron flow was suggested by Eric McFarland and Tang who directly measured the photocurrent on gold thin film of metal-semiconductor ($TiO_2$) Schottky diodes [1]. In order to utilize this scheme, we have fabricated metal-semiconductor Schottky diodes that are made of Pt or Au as a metallic layer, Si or $TiO_2$ as a semiconducting substrate. The Pt/$TiO_2$ and Pt/Si Schottky diodes are made by PECVD (Plasma Enhanced Chemical Vapor Deposition) for $SiO_2$, magnetron sputtering process for $TiO_2$, e-beam evaporation for metallic layers. Metal shadow mask is made for device alignment in device fabrication process. We measured photocurrent on Pt/n-Si diodes under AM1.5G. The incident photon to current conversion efficiency (IPCE) at different wavelengths was measured on the diodes. We also show that the steady-state flow of hot electrons generated from photon absorption can be directly probed with $Pt/TiO_2$ Schottky diodes [2]. We will discuss possible approaches to improve the efficiency of photon energy conversion.

• 반도체디스플레이기술학회지
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• 제14권1호
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• pp.27-30
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• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.275-275
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• 2008

This paper describe the fabrication of a Pd/polycrystalline 3C-SiC schottky diode and its characteristics, in which the polycrystalline 3C-SiC layer and Pd Schottky contact were deposited by using APCVD and sputter, respectively. Crystalline quality, uniformity, and preferred orientations of the Pd thin film were evaluated by SEM and XRD, respectively. Pd/poly 3C-SiC Schottky diodes were fabricated and characterized by I-V and C-V measurements. Its electric current density Js and barrier height voltage were measured as $2\times10^{-3}$ A/$cm^2$ and 0.58 eV, respectively. These devices were operated until about $400^{\circ}C$. Therefore, from these results, Pd/poly 3C-SiC Schottky devices have very high potential for high temperature chemical sensor applications.