Fabrication of Schottky diodes for RFID tag integration using Standard $0.18{\mu}m$ CMOS process

RFID tag 집적화를 위한 $0.18{\mu}m$ 표준 CMOS 공정을 이용한 쇼트키 다이오드의 제작

Schottky diodes for Radio-frequency identification (RFID) tag integration on chip were designed and fabricated using Samsung electronics System LSI standard $0.18{\mu}m$ CMOS process. Schottky diodes were designed as interdigitated fingers array by CMOS layout design rule. 64 types of Schottky diode were designed and fabricated with the variation of finger width, length and numbers with a $0.6{\mu}m$ guard ring enclosing n-well. Titanium was used as Schottky contact metal to lower the Schottky barrier height. Barrier height of the fabricated Schottky diode was 0.57eV. DC current - voltage measurements showed that the fabricated Schottky diode had a good rectifying properties with a breakdown voltage of -9.15 V and a threshold voltage of 0.25 V.