• Title/Summary/Keyword: Scattering process

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Six Sigma Robust Design for Railway Vehicle Suspension (철도차량 현수장치의 식스시그마 강건 설계)

  • Lee, Kwang-Ki;Park, Chan-Kyoung;Han, Seung-Ho
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.33 no.10
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    • pp.1132-1138
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    • 2009
  • The spring constants of primary suspensions for a railway vehicle are optimized by a robust design process, in which the response surface models(RSMs) of their dynamic responses are constructed via the design of experiment(DOE). The robust design process requires an intensive computation to evaluate exactly a probabilistic feasibility for the robustness of dynamic responses with their probabilistic variances for the railway vehicle. In order to overcome the computational process, the process capability index $C_{pk}$ is introduced which enables not only to show the mean value and the scattering of the product quality to a certain extent, but also to normalize the objective functions irrespective of various different dimensions. This robust design, consequently, becomes to optimize the $C_{pk}$ subjected to constraints, i.e. 2, satisfying six sigma. The proposed method shows not only an improvement of some $C_{pk}$ violating the constraints obtained by the conventional optimization, but also a significant decrease of the variance of the $C_{pk}$.

Recovery of Copper Powder form MoO3 Leaching Solution Using Cementation Reaction System (MoO3 침출공정 폐액으로부터 치환반응 시스템을 이용한 구리 분말 회수에 대한 연구)

  • Kim, Geon-Hong;Hong, Hyun-Seon;Jung, Hang-Chul
    • Journal of Powder Materials
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    • v.19 no.6
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    • pp.405-411
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    • 2012
  • Recovery of copper powder from copper chloride solution used in $MoO_3$ leaching process was carried out using a cementation method. Cementation is a simple and economical process, necessitating less energy compared with other recovery methods. Cementation utilizes significant difference in standard reduction potential between copper and iron under standard condition. In the present research, Cementation process variables of temperature, time, and added amount of iron scraps were optimized by using design of experiment method and individual effects on yield and efficiency of copper powder recovery were investigated using bench-scale cementation reaction system. Copper powders thus obtained from cementation process were further characterized using various analytical tools such as XRF, SEM-EDS and laser diffraction and scattering methods. Cementation process necessitated further purification of recovered copper powders and centrifugal separation method was employed, which successfully yielded copper powders of more than 99.65% purity and average $1{\mu}m$ in size.

Numerical Simulation of Productivity of Metal Powder Spray Granulation Process Using Discrete Element Method (이산요소법을 이용한 금속 분말 분무 과립화 공정의 생산성 시뮬레이션 연구)

  • Son, Kwon Joong
    • Journal of the Korea Convergence Society
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    • v.12 no.1
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    • pp.185-191
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    • 2021
  • A powder metallurgy process with granules is the manufacturing technology that can achieve higher-density sintered parts than conventional powder metallurgy processes. However, there is a disadvantage in that the production cost increases significantly due to the additional granulation step. High granule productivity must be guaranteed for affordable material costs in this manufacturing technology. This paper performed a series of scattering, collision, and adhesion simulations of agglomerated powders to investigate the characteristics of granulation process affecting the manufacturing yield rate. The results of this simulation-based convergence study can contribute to improving productivity in the metal powder spray granulation process.

Synchrotron Grazing Incidence X-ray Scattering and Its Applications in Polymer Nanotechnology

  • Ree, Moon-Hor;Lee, Byeong-Du;Yoon, Jin-Hwan;Heo, Kyu-Young;Jin, Kyeong-Sik;Jin, Sang-Woo;Kim, Hyun-Chul;Kim, Gha-Hee;Choi, Seung-Chul;Oh, Weon-Tae;Park, Young-Hee;Hwang, Yong-Taek;Kim, Jong-Seong
    • Proceedings of the Polymer Society of Korea Conference
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    • 2006.10a
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    • pp.120-120
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    • 2006
  • In our study grazing incidence X-ray scattering (GIXS) measurements with synchrotron radiation sources were conducted statically and in-situ for a series of nanoscale thin films prepared from nanoporous dielectrics, block copolymers, brush polymers, and molecular assemblies. All GIXS measurements were performed at the Pohang Accelerator Laboratory. The measured scattering data were analyzed in detail by using newly developed GIXS scattering theory. All GIXS results will be discussed in details with considering the materials chemistry and nanostructure formation process parameters.

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Comparison of GDI Spray Prediction by Hybrid Models (혼합모델에 의한 GDI 분무예측의 비교)

  • Kang, Dong-Wan;Hwang, Chul-Soon;Kim, Duck-Jool
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.27 no.12
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    • pp.1744-1749
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    • 2003
  • The purpose of this study is to obtain the information about the development process of GDI spray. To acquire the characteristics of GDI spray, the computational study of hollow cone spray for high-pressure swirl injectors was performed. Several hybrid models using the modified KIVA code have been introduced and compared. WB model and LISA model were used for the primary breakup, and DDB and APTAB models were used for secondary breakup. To compare with the calculated results, the experimental results such as cross-sectional images and SMD distribution were acquired by laser Mie scattering technique and Phase Doppler Analyzer respectively. The results show that LISA+APTAB hybrid model has the best prediction for spray formation process.

Nature of Surface and Bulk Defects Induced by Epitaxial Growth in Epitaxial Layer Transfer Wafers

  • Kim, Suk-Goo;Park, Jea-Gun;Paik, Un-Gyu
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.4
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    • pp.143-147
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    • 2004
  • Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

Cosmological shocks and the cosmic gamma-ray background

  • Ma, Renyi;Ryu, Dong-Su;Kang, Hye-Sung
    • The Bulletin of The Korean Astronomical Society
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    • v.35 no.1
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    • pp.83.2-83.2
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    • 2010
  • During the formation of cosmic web, collisionless shock waves are produced around and inside the substructures. In these shock waves electrons and ions are accelerated to such high energies that they can produce gamma rays in several ways. Many authors have studied the contribution of shock-induced radiation to the cosmic gamma-ray background. However not all the important physical processes are included in their calculation. By considering more complete physical process, we re-investigate the problem. In our model, the energy distribution of the cosmic rays (CRs) are calculated by widely accepted diffusive shock acceleration model, both primary and secondary CR electrons are included, both inverse Compton scattering and bremsstrahlung process are considered. The difference of the results are discussed.

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A Study on Sb2O3 Beam Tuning and Monitoring in Antimony Implantation - (안티몬 이온주입시 Sb2O3 빔튜닝 방법 및 모니터링 연구)

  • 김상용;최민호;김남훈;정헌상;장의구
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.5
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    • pp.476-480
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    • 2004
  • The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.

Simulation of Ground Surface by In-process Measurement (인프로세스 측정을 통한 연삭 시뮬레이션)

  • Hong, Min-Sung;Choi, Woo-Seok
    • Journal of the Korean Society for Precision Engineering
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    • v.16 no.6
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    • pp.160-165
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    • 1999
  • In surface grinding, the conditions of the grinding wheel give a significant effect on the ground workpieces comparing with other metal removal provesses. In this paper, to assist the development, a non-contacting optical method by the laser beam is introduced. The in-process measurement of scattering intensities has been made during surface grinding processes and the surface textures of wheel working surfaces are captured. Also, in order to determine the dressing time monitoring method of a grinding wheel, a three-dimensional computer simulation of the grinding operation has been attempted based on the contact mechanism and the surface-shaping system between the grinding wheel and the workpiece. The optimal dressing time is determined by the amount of the grain wear and work surface roughness.

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Modeling and Simulation of Electron-beam Lithography Process for Nano-pattern Designs using ZEP520 Photoresist (ZEP520 포토리지스트를 이용한 나노 패턴 형성을 위한 전자빔 리소그래피 공정 모델링 및 시뮬레이션)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.25-33
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    • 2007
  • A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

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