• 제목/요약/키워드: Scanning Probe Microscopy

검색결과 273건 처리시간 0.03초

Displacement measurement sensor using astigmatic confocal technology

  • J.W. Seo;D.K. Kang;Lee, J.H.;Kim, D.M.;D.G. Gweon
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2001년도 ICCAS
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    • pp.163.2-163
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    • 2001
  • Confocal scanning microscopy (CSM) has been reported as an excellent method using the optical probe in scanning probe microscopy (SPM). Transmission or reflection confocal scanning microscopy (TCSM, RCSM) has been used in the three-dimensional reconstruction of specimen or the non-destructive measurement in vivo. The axial movement of the primary focal point having the information of specimen gives a good measurement performance with the great sensitivity. Application of the confocal theory and astigmatism to displacement measurement sensor uses the aperture as the pinhole or slit after collecting lens relating to confocal response in non-contact measurement; and astigmatic lens using four-segments detector as short-range sensor, long-range one combining the grating and rotary one hating the rotary directional grating. The aperture type can play an ...

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Scanning Probe Microscopy를 이용한 국소영역에서의 실리콘 나노크리스탈의 전기적 특성 분석 (Characterization of Electrical Properties of Si Nanocrystals Embedded in a SiO$_{2}$ Layer by Scanning Probe Microscopy)

  • 김정민;허현정;강치중;김용상
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권10호
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    • pp.438-442
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    • 2005
  • Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

고성능 주사탐침열현미경 열전탐침 제작 (High Performance Thermoelectric Scanning Thermal Microscopy Probe Fabrication)

  • 김동립;김경태;권오명;박승호;최영기;이준식
    • 대한기계학회논문집A
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    • 제29권11호
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    • pp.1503-1508
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    • 2005
  • Scanning Thermal Microscope (STU) has been known for its superior resolution for local temperature and thermal property measurement. However, commercially available STU probe which is the key component of SThM does not provide resolution enough to explore nanoscale thermal phenomena. Here, we developed a SThM probe fabrication process that can achieve spatial resolution around 50 m. The batch-fabricated probe has a thermocouple junction located at the end of the tip. The size of the thermocouple junction is around 200 m and the distance of the junction from the very end of the tip is 150 m. The probe is currently being used for nanoscale thermal probing of nano-material and nano device.

나노인덴테이션과 주사탐침현미경을 이용한 박막 재료의 특성평가 (Characterization of Thin Film Materials by Nanoindentation and Scanning Probe Microscopy)

  • 김봉섭;윤존도;김종국
    • 한국재료학회지
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    • 제13권9호
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    • pp.606-612
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    • 2003
  • Surface and mechanical properties of thin films with submicron thickness was characterized by nanoindentation with Berkovich and Vickers tips, and scanning probe microscopy. Nanoindention was made in a depth range of 15 to 200 nm from the surface by applying tiny force in a range from 150 to $9,000 \mu$N. Stiffness, contact area, hardness, and elastic modulus were determined from the force-displacement curve obtained. Reliability was first tested by using fused quartz, a standard sample. Elastic modulus and hardness values of fused quartz measured were the same as those reported in the literature within two percent of error. Mechanical properties of ITO thin film were characterized in a depth range of 15∼200nm. As indentation depth increased, elastic modulus and hardness decreased by substrate effect. Ion beam deposited DLC thin films were indented in a depth range of 40∼50 nm. The results showed that the DLC thin film using benzene and bias voltage 0∼-50 V has elastic modulus and hardness value of 132 and 18 GPa respectively. Pure DLC thin films showed roughnesses lower than 0.25 nm, but silicon-added DLC thin films showed much higher roughness values, and the wavy surface morphology.

SPM (Scanning Probe Microscopy)을 이용한 $SiO_2$ layer에서의 실리콘 나노 크리스탈의 전기적 특성 분석 (Characterization of Electrical Properties of Si Nanocrystals Embedded in a $SiO_2$ Layer by Scanning Probe Microscopy)

  • 김정민;허현정;손정민;이은혜;강윤호;강치중;김용상
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.1900-1902
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    • 2005
  • 본 연구에서는 scanning probe microscopy(SPM)을 이용하여 국소영역에서 silicon nanocrystal(Si NC)의 전기적 특성을 분석하였다. Si NCs은 압축된 silicon powder를 laser로 분해하는 laser ablation 방식으로 제조되었고, sharpening oxidation 과정을 통하여 Si NC 주변에 oxide shell을 형성시켰다. 이 과정에서 Si NCs은 $10{\sim}50 nm$의 크기와 약 $10^{11}/cm^2$의 밀도로 $SiO_2$층에 증착되었다. SPM의 conducting tip을 통하여 전하는 각각의 Si NC로 주입되게 되고, 이로 인하여 발생하는 SCM image와 dC/dV curve의 변화를 통하여 Si NC에서 전하 거동을 모니터 하였다. 또한 국소영역에서 Si NC의 전기적 특성을 MOS capacitor 구조에서의 C-V 특성과 비교 분석하였다.

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Polarization State of Scattered Light in Apertureless Reflection-mode Scanning Near-Field Optical Microscopy

  • Cai, Yongfu;Aoyagi, Mitsuharu;Emoto, Akira;Shioda, Tatsutoshi;Ishibashi, Takayuki
    • Journal of Magnetics
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    • 제18권3호
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    • pp.317-320
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    • 2013
  • We studied the polarization state in an apertureless scanning near-field microscopy (a-SNOM) operating in reflection mode by using three-dimensional Finite-difference Time-domain (FDTD) method. As a result, the electric field around tip apex in the near-field region enhanced four times stronger than the incident light for ppolarization when the tip-sample separation was 10 nm. We find that the p- and s-polarization state is maintained for the scattered light when the probe is perpendicular to the sample. When the probe is not perpendicular to the sample, the polarization state of scattered light will rotate an angle that equals to the inclination angle of probe with p-polarization illumination. On the other hand, the polarization state will not rotate with s-polarization illumination.

광디스크의 노화에 관한 주사 탐침 현미경 연구 (Scanning Probe Microscopy Study on the Degradation of Optical Recoding Disks by Environmental Factors)

  • 윤만영;신현창
    • 한국인쇄학회지
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    • 제29권3호
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    • pp.97-104
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    • 2011
  • The storing ability of information of optical disks directly depends on the physical property of recording unit cells. It means that the degradation of optical disks ultimately causes the loss of the physical and chemical properties of recording unit cells and leads also information, too. We investigated the degradation and life time of optical disks which tell us the longevity of the preservation of information. Optical disks were aged using the accelerated aging system and studied by optical reflectivity spectroscopy and atomic force microscopy(AFM), and the preservation environment of electronic media in National central library of Korea also were analysed. Results show that the double reflective coated optical disks have good preservation of recording information but revealed some deformation of dye area in the AFM images. It means that we should include the mechanical and chemical degradation of the optical disks in the life time expectation evaluation.

주사 전자 현미경에서 전자빔 프르브 생성 (Creation of Electron Beam Probe in Scanning Electron Microscopy)

  • 임선종;이찬홍
    • 한국공작기계학회논문집
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    • 제17권5호
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    • pp.52-57
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    • 2008
  • Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lenes and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. Backscattered electron provide an useful signal for composition and local specimen surface inclination. Secondary electron is used far the formation of surface imagination. The steady electron beam probe is very important for the imagination formation and the brightness. In this paper, we show the results of developed elements that create electron beam probe and the measured beam probe in various acceleration voltages by Faraday cup. These data are used to analysis and improve the performance of the system in the development.

Theoretical and Experimental Investigation on the Probe Design of a Ridge-loaded Slot Type for Near-Field Scanning Microwave Microscope

  • Son, Hyeok-Woo;Kim, Byung-Mun;Hong, Jae-Pyo;Cho, Young-Ki
    • Journal of Electrical Engineering and Technology
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    • 제10권5호
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    • pp.2120-2125
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    • 2015
  • In this paper, a rectangular waveguide probe with a ridge-loaded straight slot (RLSS) is presented for a near-field scanning microwave microscope (NSMM). The RLSS is located laterally at the end wall of the cavity and is loaded on double ridges in a narrow straight slot to improve the spatial resolution compared with a straight slot. The probe consists of a rectangular cavity with an RLSS and a feed section of a WR-90 rectangular waveguide. When the proposed NSMM is located at distance of 0.1mm in front of a substrate without patches or strips, the simulated full width at half maximum (FWHM) of the probe improve by approximately 31.5 % compared with that of a straight slot without ridges. One dimensional scanning of the E-plane on a sample under test was conducted, and the reflection coefficient of the near-field scanning probe is presented.

Nanomanipulation and Nanomanufacturing based on Ion Trapping and Scanning Probe Microscopy (SPM)

  • Kim, Dong-Whan;Tae, Won-Si;Yeong, Maeng-Hui;K. L. Ekinci
    • 한국공작기계학회:학술대회논문집
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    • 한국공작기계학회 2004년도 춘계학술대회 논문집
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    • pp.530-537
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    • 2004
  • Development of a versatile nanomanipulation tool is an overarching theme in nanotechnology. Such a tool will likely revolutionize the field given that it will enable fabrication and operation of a wealth of interesting nanodevices. This study seeks funding to create a novel nanomanipulation system with the ultimate goal of using this system for nanomanufacturing at the molecular level. The proposed design differs from existing approaches. It is based on a nanoscale ion trap integrated to a scanning prove microscope (SPM) tip. In this design, molecules to be assembled will be ionized and collected in the nanoscale ion trap all in an ultra high vacuum (UHV) environment. Once filled with the molecular ions, the nanoscale ion trap-SPM tip will be moved on a substrate surface using scanning probe microscopy techniques. The molecular ions will be placed at their precise locations on the surface. By virtue of the SPM, the devices that are being nanomanufactured will be imaged in real time as the molecular assembly process is carried out. In the later stages, automation of arrays of these nanomanipulators will be developed.

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