• Journal of the Semiconductor & Display Technology
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• 제2권4호
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• pp.31-35
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• 2003

We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

• The Transactions of the Korean Institute of Electrical Engineers
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• 제41권8호
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• pp.875-882
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• 1992

Titanium carbide(TiC) films, known as having excellent characteristics of resistance to wear and corrosion, were deposited on SUS-304 sheets using HCD(Hollow Cathode Discharge) reactive ion plating with acetylene gas as the reactant gas. The characteristics of TiC films were examined by X-ray diffraction, micro-Vickers hardness tester, ${\alpha}$-step, SEM(Scanning Electron Spectroscopy), ESCA(Electron Spectroscopy for Chemical Analysis), and AES(Auger Electron Spectroscopy) and the results were discussed with regard to the changes of various deposition conditions(bias voltage, acetylene flow rate, temperature).

• Journal of IKEEE
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• 제21권3호
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• pp.297-308
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• 2017

By using electron beam evaporation under appropriate conditions, we obtained graphene intercalated sheets on Si(111) with an average crystallite size less than 11nm. The formation of such nanocrystalline graphene was found as a time-dependent function of carbon deposition at a substrate temperature of $1000^{\circ}C$. The structural and electronic properties as well as the surface morphology of such produced materials have been confirmed by reflection high energy electron diffraction, Auger electron spectroscopy, X-ray photoemission spectroscopy, Raman spectroscopy, scanning electron microscopy, atomic force microscopy and scanning tunneling microscopy.

• Journal of the Korean Vacuum Society
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• 제4권S1호
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• pp.28-33
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• 1995

TiN 박막은 저온(<$500^{\circ}C$), 저압(1Torr)에서 Tetrakis(diethylamido)titanium[TDEAT, Ti(NEt2)4]single precursor를 사용하여 증착하였다. 증차고딘 박막은 SEM(Scanning Electron Microscopy)으로 surface morphology와 step coverage를 측정하였고, TEM(Transmission Electron Microscopy)분석결과 microcrystalline의 TiN을 확인하였다. XPS(X-ray Photoelectron Spectroscopy)분석결과에 따르면 $200-500^{\circ}C$구간에서는 $\beta$-hydogen elimination에 의한 반응이 일어나고 $600-700^{\circ}C$구간에서는 thermal decomposition에 의한 반응이 일어나고 있음을 알 수 있다. Carbon과 oxygen의 농도는 AES(Auger Electron Spectroscopy)를 사용하여 측정하였으며 온도가 감소할수록 carbon의 농도가 감소하는 경향을 보여주고 있다.

• Tribology and Lubricants
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• 제24권6호
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• pp.302-307
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• 2008

The running-in behaviour of the metal carbon coating (WC/C) was evaluated with regard to its applicability as wear-resistant coating for key components in engines. Reciprocating wear tests under lubricated condition employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. Confocal microscopy and scanning electron microscopy were used to observe worn surfaces and the wear scars on the steel balls. Elemental composition of the coating and worn surfaces were characterized using Auger electron spectroscopy. The friction behavior of WC/C coating was comparable to common carbon-based coatings. Thin tribofilm was formed on the worn surface of the steel ball due to material transfer and tribochemical reaction whereas there was no evidence of tribofilm generation on the coating surface. indicating the chemical innertness of WC/C coating.

• Proceedings of the Materials Research Society of Korea Conference
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.114-114
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• 1993

• Tribology and Lubricants
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• 제18권4호
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• pp.260-266
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• 2002

In this study, the effects of oxide layer farmed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with 1 ${\mu}{\textrm}{m}$ in coating thickness. AISI 52100 steel ball was used fur the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction(XRD), Auger electron spectroscopy(AES), scanning electron microscopy (SEM) and multi-mode atomic force microscope(AFM).

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 한국윤활학회 2002년도 제35회 춘계학술대회
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• pp.310-316
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• 2002

In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction and wear characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1{\mu}m$ in coating thickness. AISI 52100 steel ball was used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction and wear characteristics using X-ray diffraction (XRD). Auger electron spectroscopy (AES), scanning electron microscopy (SEM) and sliding tests.

• Journal of the Institute of Electronics Engineers of Korea SD
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• 제41권1호
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• pp.15-20
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• 2004

The interfacial layer between the oxide film and the metal film according to RTP annealing temperature of metal film has been studied. Two types of oxides, BPSG and PETEOS, were used as a bottom layer under multi-layered metal films. We observed the interface between oxide and metal films using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Bonding failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal films above $650^{\circ}C$ RTP anneal. The phosphorus accumulation layer was observed at interface between BPSG oxide and metal films by AES and TEM measurements. On the other hand, bonding was always good in the sample using PETEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal films was improved when the sample was annealed below $650^{\circ}C$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.371-372
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• 2009

We have prepared and characterized CIGS nanopowder for absorber layer of photovoltaic. CIGS nanopowder were obtained at $260^{\circ}C$ for 6 hours from the reaction of $CuCl_2$, $InCl_3$, $GaCl_3$ and Se powder in solvent. The CIGS nanopowder were identified to have a typical chalcopyrite tetragonal structure by using X-ray diffraction(XRD), Inductively Coupled Plasma Auger Electron Spectroscopy (AES), Scanning Electron Microscopy(SEM).