• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.29-32
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• 2012

Lead-free $0.98(Na_{0.5},K_{0.5})NbO_3-0.02Li(Sb_{0.17}Ti_{0.83})O_3$ (hereafter 0.98NKN-0.02LST) ceramics doped with $Ag_2O$ were prepared using a conventional mixed oxide method. The specimen showed superior structural and electrical properties when 1 mol% $Ag_2O$ was doped. For the 0.98NKN-0.02LST+1.0mol%$Ag_2O$ ceramics sintered at $1,100^{\circ}C$, piezoelectric constant ($d_{33}$) of sample showed the optimum values of 207 pC/N. The 0.98NKN-0.02LST+1.0 mol%$Ag_2O$ ceramics are a promising candidate for lead-free piezoelectric materials.

• Journal of Powder Materials
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• v.25 no.1
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• pp.54-59
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• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.957-958
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• 2006

Fe doped skutterudite $CoSb_3$ with a nominal composition of $Fe_xCo_{1-x}Sb_{12}(0{\leq}x{\leq}2.5)$ have been synthesized by mechanical alloying (MA) of elemental powders, followed by vacuum hot pressing. Phase transformations during mechanical alloying and vacuum hot pressing were systematically investigated using XRD. Single phase skutterudite was successfully produced by vacuum hot pressing using as-milled powders without subsequent annealing. However, second phase of $FeSb_2$ was found to exist in case of $x\geq2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties as functions of temperature and Fe contents were evaluated for the hot pressed specimens. Fe doping up to x=1.5 with Co in $Fe_xCo_{4-x}Sb_{12}$ appeared to increase thermoelectric figure of merit (ZT) and the maximum ZT was found to be 0.78 at 525K in this study.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.471-478
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• 2011

Investigations of crystal structure and phase transition of $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics doped with A-site substitution impurity (La, Nd) or B-site substitution impurity (Sb, Nb) at 2 mol% concentration were carried out. X-ray diffraction patterns of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics have been measured at pressures up to ~5 GPa with diamond anvil cell and synchrotron radiation. The patterns were obtained at room temperature using methanol-ethanol mixture as pressure-transmitting media. In order to refine the crystal structure, Rietveld analysis has been performed. The structures of impurities doped $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics are tetragonal in space group P4mm at ambient pressure and are transformed into a cubic phase in space group Pm$\bar{3}$m as the pressure increases. In this study, when A-site substitution donor $La^{3+}$ or $Nd^{3+}$ ion was added to $Pb(Zr_{0.52}Ti_{0.48})O_3$ ceramics, the phase transition phenomena showed up at the pressure of 2.5~4.6 GPa, but when B-site substitution donor $Nb^{5+}$ or $Sb^{5+}$ ion was added to it, the phase transition appeared at relatively lower pressure of 1.7~2.6 GPa.

• Polymer(Korea)
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• v.39 no.2
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• pp.225-234
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• 2015

In this study, we proposed to synthesize thermally stable, soluble and conjugated Schiff base polymer (SbP). For this reason, a specific molecule namely 4,4'-thiodiphenol which has sulfur and oxygen bridge in its structure was used to synthesize bi-functional monomers. Bi-functional amino and carbonyl monomers namely 4,4'-[thio-bis(4,1-phenyleneoxy)] dianiline (DIA) and 4,4'-[thiobis(4,1-phenyleneoxy)]dibenzaldehyde (DIB) were prepared from the elimination reaction of 4,4'-thiodiphenol with 4-iodonitrobenzene and 4-iodobenzaldehyde, respectively. The structures of products were confirmed by elemental analysis, FTIR, $^1H$ NMR and $^{13}C$ NMR techniques. The molecular weight distribution parameters of SbP were determined by size exclusion chromatography (SEC). The synthesized SbP was characterized by solubility tests, TG-DTA and DSC. Also, conductivity values of SbP and SbP-iodine complex were determined from their solid conductivity measurements. The conductivity measurements of doped and undoped SbP were carried out by Keithley 2400 electrometer at room temperature and atmospheric pressure, which were calculated via four-point probe technique. When iodine was used as a doping agent, the conductivity of SbP was observed to be increased. Optical band gap ($E_g$) of SbP was also calculated by using UV-Vis spectroscopy. It should be stressed that SbP was a semiconductor which had a potential in electronic and optoelectronic applications, with fairly low band gap. SbP was found to be thermally stable up to $300^{\circ}C$. The char of SbP was observed 29.86% at $1000^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.236-245
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• 1993

Single crystals, SbSI : V, SbSeI : V, BiSI : V, BiSeI : V, SbSI : Cr, SbSeI : Cr, BiSI : Cr, BiSeI : Cr, SbSI : Ni, SbSeI : Ni, BiSI : Ni, and BiSeI : Ni were grown by the vertical Bridgman method. It is found that the grown single crystals have an orthorhombic structure and the indirect optical transitions. The temperature dependence of energy gap shows the two reflection point related with the phase transitions and is well fitted with Varshni equation in the continuous region. The optical absorption peaks due to the doped impurities (V, Cr and Ni) are respectively attributed to the electron transitions between the split energy levels of $V^{+2}$, $Cr^{+2}$ and $Ni^{+2}$ ions sited at $T_d$ symmetry of the host lattice.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.617-621
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• 2010

($K_{0.5}Na_{0.5}$)($Nb_{0.96}Sb_{0.04}$)$O_3$+1.2 mol% $K_4CuNb_8O_{23}$ ceramics doped with iron oxide ($Fe_2O_3$) were prepared by a conventional mixed oxide method. And then, their piezoelectric and dielectric properties were investigated as a function of $Fe_2O_3$ addition. X-ray diffraction studies reveal that $Fe^{3+}$ diffuses into the NKN lattices to form a solid solution with a pure perovskite structure at room temperature. At the sintering temperature of $1,060^{\circ}C$, when 0.2 mol% $Fe_2O_3$ was doped, the piezoelectric constant ($d_{33}$), electromechanical coupling factor (Kp), and mechanical quality factor ($Q_m$) showed the excellent values of 131.67 pC/N, 0.436, and 696.36, respectively. Results show that $Fe_2O_3$ deped ($K_{0.5}Na_{0.5}$)($Nb_{0.96}Sb_{0.04}$)$O_3$+1.2 mol% $K_4CuNb_8O_{23}$ lead-free piezoelectric ceramics are a promising lead free material for piezoelectric transformer applications.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.6
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• pp.361-366
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• 2014

$MnO_2$-doped $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3(0.985LNKNTS+0.015KNbO_3)$ lead-free ceramics were fabricated by conventional solid state method to develop excellent dielectric and piezoelectric properties. The result of X-ray diffraction patterns obviously indicated that all of the specimen has pure perovskite structure without secondary phase. In addition, orthorhombic phase and coexistance region of orthorhombic-tetragonal phase (MPB) were observed with amount of $MnO_2$. The optimal values of ${\rho}$=4.70 $g/cm^3$, $d_{33}=238$ pC/N, $k_P=0.46$, $Q_m=121$, ${\varepsilon}_r=849$, and $T_C=225^{\circ}C$ were obtained at 0.01 mol% $MnO_2$ doped $0.985LNKNTS+0.015KNbO_3$ ceramics sintered at $990^{\circ}C$ for 5 h, respectively. Hence, it was indicated that the suitable amount of $MnO_2$ could improve the electrical properties of $0.985[Li_{0.04}(Na_{0.545}K_{0.46})_{0.96}(Nb_{0.81}Ta_{0.15}Sb_{0.04})]O_3+0.015KNbO_3$ ceramics.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.3
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• pp.16-21
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• 1976

Transparent eloctroaes of polycrystalline till-oxide films doped with antimony are prepared on the substrate of microscopic cover g1ass by modified spray method and from SnCl4 Solution. Their electrical and optical properties are investigated in relation to the surface temperature of the substrate glass and to antimony concentration in the starting materials. The sheet.resiststrace of the film electrodes and transmittance for incandescent light depen on tile antimony concentration and surface temperature of substrates at the time of making films. The transmittance increases with decrease of sheet resistance of the film. The optimum sheet.resistance was obtianed in the case of the antimony concentration 0.6(%) approximately , and the max. transmittance was 93(%).

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1959-1961
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• 1999

We prepared the $Ag[100\AA])/Sb_2S_3[3000\AA]$ films using the thermal evaporator. The films were exposed by the blue-pass filtered mercury lamp and the polarized He-Ne laser. We have investigated the dependence of the induced optical energy with Ag-doping and have observed the transmittance variation near the optical absorption edge with the light source. It was shown that the energy gap of this thin film was largely changed by exposing He-Ne laser, the light source of the near energy gap of this thin film. It is because of the structural change from Ag-doping. It is investigated that the dissolution, the diffusion, and the field effect of the Ag thin film generate the Ag spatial distribution.