• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• Journal of the Korean Ceramic Society
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• v.32 no.3
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• pp.313-320
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• 1995

We investigated the preferred orientation, electrical and magnetic properties of the Mn-Zn ferrite thin films deposited on SiO2/Si(100) by ion beam sputtering. The Cu-added Mn-Zn ferrite thin films had a preferred orientation of (111) with a weak orientation, (311). While the Zn-added one had a strong (111) preferred orientation. The saturation magnetization of the Cu- or Zn-doped Mn-Zn ferrite films increased with increasing substrate temperature (Ts) due to the increase of grain size and the enhancement of crystallinity. For the same reason the coercivity of Cu- or Zn-doped Mn-Zn ferrite films deposited at low Ts increased with increasing Ts, but those of the films deposited at high Ts slightly decreased not only because the defect density of the films decreases but because more grains have multi-domains with increasing Ts. The resistivity of Cu- or Zn-added Mn-Zn ferrite thin fims measured by complex impedance method decreased with increasing Ts due to the ehhancement of crystallinity as well as due to the increase of grain size.

• Journal of Powder Materials
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• v.16 no.4
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• pp.249-253
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• 2009

3-D shape soft magnetic composite parts can be formed by general compaction method of powder metallurgy. In this study, the results on the high density nanostructured Fe-Si/Fe composite prepared by a warm compaction method were presented. Ball-milled Fe-25 wt.%Si powder, pure Fe powder and Si-polymer were mixed and then the powder mixture was compacted at various temperatures and pressures. Pore free density of samples up to 95% theoretical value has been obtained. The warm compacted sample prepared at 650 MPa and 240$^{\circ}C$ had highest compaction properties in comparison with other compacts prepared at 300, 400 MPa and room temperature and 120$^{\circ}C$. The magnetic properties such as core loss, magnetization saturation and coercivity were measured by B-H curve analyzer and vibration sample magnetometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.04b
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• pp.81-84
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• 2002

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{10}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide($As_{10}Ge_{10}Se_{15}S_{35}$). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.3
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• pp.234-239
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• 2010

An inductive coupler, which feeds communication to the electric power transmission line, is required to establish Power Line Communication(PLC). The electro-magnetic property of magnetic core and design technology for coupler are very important to manufacture an inductive coupler for power transmission line. The magnetic core with superior electro-magnetic property was manufactured by using nanocrystalline alloy and an inductive coupler, which can operate at the maximum 2,000 A current, was designed and manufactured by establishment of current saturation, signal out winding, and electromagnetic simulation in this study. Communication speed of 14 Mbps in 600 meter communication distance of the real electric power transmission line was obtained by using the inductive coupler and application possibility of the inductive coupler for the electric power transmission line was certified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.439-440
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• 2008

An inductive coupler, which feeds communication to the electric power transmission line, is required to establish Power Line Communication(PLC). The electro-magnetic property of magnetic core and design technology for coupler are very important to manufacture an inductive coupler for power transmission line. The magnetic core with superior electro-magnetic property was manufactured by using nano-crystalline alloy and an inductive coupler, which can operate at the maximum 2,000 A current, was designed and manufactured by establishment of current saturation, signal out winding, and electro-magnetic simulation in this study. Communication speed of 14 Mbps in 600 m communication distance of the real electric power transmission line was obtained by using the inductive coupler and application possibility of the inductive coupler for the electric power transmission line was certified.

• Korean Journal of Materials Research
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• v.30 no.3
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• pp.117-122
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• 2020

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (E_F) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.144-150
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• 2003

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.35 no.3
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• pp.599-606
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• 2015

Damage of landslide due to earthquake covers a considerable part of total damage due to earthquake. Landslide due to earthquake affects direct damage of human lives and structures, and social system can be paralyzed by losing functions of roads, basic industries, and so on. Therefore, systematic and specialized research examining the factors affecting the slope stability by earthquakes should be needed. However, method of evaluation of slope stability problems due to earthquake contains somewhat uncertainty since many soil properties are predicted or assumed. In this study, influences of change of soil properties such as degree of saturation and cohesion value are analyzed in factor of safety and displacement using seismic landslide hazard maps based on GIS. As the degree of saturation increases or cohesion decreases, it is found that seismic landslide hazard area marked with factors of safety or displacements tends to increase. Therefore, to draw more exact landslide hazard map during earthquake, it is necessary to obtain accurate soil property information preferentially from site investigation data in the field.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.2
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• pp.250-256
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• 2014

In this study, we deposited and investigated ${\mu}c$-Si:H thin films prepared by Plasma Enhanced Chemical Vapor Deposition(PECVD) system. To deposition silicon thin films, we controlled $SiH_4$ gas concentration, RF input power, and heater temperature. According to the experiments, the more $SiH_4$ gas concentration increased, deposition rate also increased but crystalline property decreased at the same conditions. In the RF input power case, deposition rate and crystalline property increased together when the input power increased from 100[W] to 300[W]. If RF input power was 300[W], deposition rate has reached saturation point. In the heater temperature, deposition rate increased when heater temperature increased. Crystalline property maintained a certain level until heater temperature was $250[^{\circ}C]$. And then it was a suddenly increased. Multistep method has been proposed to improve the quality of ${\mu}c$-Si:H thin film. $SiH_4$ gas was injected with a time interval. According to the experiments, crystallite ratio improve about 20~60[%] and photo conductivity increased up to six times.