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http://dx.doi.org/10.4313/JKEM.2003.16.2.144

Characteristics of the Photoinduced Anisotropy(PA) in Ag/AsGeSeS Multilayer Thin Films  

Yeo, Cheol-Ho (광운대학교 전자재료공학과)
Na, Su-Woong (광운대학교 전자재료공학과)
Shin, Kyung (광운대학교 전자재료공학과)
Park, Jeong-Il (광운대학교 전자재료공학과)
Chung, Hong-Bay (광운대학교 전자재료공학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.16, no.2, 2003 , pp. 144-150 More about this Journal
Abstract
The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.
Keywords
Photoinduced anisotropy; Linear dichroism; Ag polarized-photodoping; $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ Uultilayer($Ag/As_{40}Ge_{10}Se_{15}S_{35}$;
Citations & Related Records
Times Cited By KSCI : 1  (Citation Analysis)
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