• Journal of Electrical Engineering and Technology
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• 제13권2호
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• pp.875-880
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• 2018

This paper proposes a novel combined compensation structure in the infrared receiver chip. For the infrared communication chip, the current-voltage (I-V) convert circuit is crucial and important. The circuit is composed by the transimpedance amplifier (TIA) and the combined compensation structures. The TIA converts the incited photons into photocurrent. In order to amplify the photocurrent and avoid the saturation, the TIA uses the combined compensation circuit. This novel compensation structure has the low frequency compensation and high frequency compensation circuit. The low frequency compensation circuit rejects the low frequency photocurrent in the ambient light preventing the saturation. The high frequency compensation circuit raises the high frequency input impedance preserving the sensitivity to the signal of interest. This circuit was implemented in a $0.6{\mu}m$ BiCMOS process. Simulation of the proposed circuit is carried out in the Cadence software, with the 3V power supply, it achieves a low frequency photocurrent rejection and the gain keeps 109dB ranging from 10nA to $300{\mu}A$. The test result fits the simulation and all the results exploit the validity of the circuit.

• Korean Journal of Optics and Photonics
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• 제14권2호
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• pp.166-168
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• 2003

By using gain saturation of semiconductor optical amplifiers (SOAs), an all-optical AND gate at 10 Gb/s has been successfully demonstrated. Firstly, Boolean (equation omitted) has been obtained using the first SOA with signal B and clock injection. Then, the all-optical AND gate is achieved using the second SOA with signals A and (equation omitted) injection.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.227-228
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• 2006

In this paper, we introduce the design and fabrication of 60 GHz low noise amplifier MMIC for IEEE802.15.3c WPAN system. The 60 GHz LNA was designed using ETRI's $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The performances of the fabricated 60 GHz LNA MMIC are operating frequency of $60.5{\sim}62.0\;GHz$, small signal gain ($S_{21}$) of $17.4{\sim}18.1\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-14{\sim}-3\;dB$, output reflection coefficient ($S_{22}$) of $-11{\sim}-5\;dB$ and noise figure (NF) of 4.5 dB at 60.75 GHz. The chip size of the amplifier MMIC was $3.8{\times}1.4\;mm^2$.

• Korean Journal of Optics and Photonics
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• 제14권2호
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• pp.175-183
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• 2003

We obtain a solution of optical parametric amplification using self-phase modulation within the Kerr media in a nonlinear interferometer with two arms. We show that it is equivalent to the solution driven by four-wave mixing and that the solution of parametric amplification is suitable to generate a parametric gain. We obtain a derivative of power gain with respect to the propagation distance and show that gain-saturation can occur as the beam propagates along the nonlinear arms. We also show a bandwidth characteristic of the parametric amplification driven by nondegenerate four-wave mixing. Numerical examples are given to illustrate that the solution of the parametric amplification can be applied to design and analysis of all-optical devices such as all-optical amplifiers.

• KIEE International Transactions on Electrophysics and Applications
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• 제11C권4호
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• pp.99-106
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• 2001

An overview of Silicon Carbide (SiC) Static Induction Transistor (SIT) development is presented. Basic conduction mechanisms are introduced and discussed, including ohmic, exponential, and space charge limited conduction (SCLC) mechanisms. Additionally, the impact of velocity saturation and temperature effects on SCLC are reviewed. The small-signal model, breakdown voltage, power density, and different gate structures are also discussed, before a final review of published SiC SIT results. Published S-band (3-4 GHz) results include 9.5 dB of gain and output power of 120 W, and L-band (1.3 GHz) results include 400 W output power, 7.7 dB of gain, and power density of 16.7 W/cm.

• Journal of the Korean Vacuum Society
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• 제8권4B호
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• pp.536-540
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• 1999

We have developed a refractory WNx self-aligned gate GaAs metal-semiconductor field-effect transistor(MESFET) using $SiO_2$ side-wall process. The MESFET hasa fully ion-implanted, planar, symmetric self-alignment structure, and it is quite suitable for integration. The uniform trans-conductance of 354nS/mm up to Vgs=+0.6V and the saturation current of 171mA/mm were obtained. As high as 43GHz of cut-off frequency hs been realized without any de-embedding of parasitic effects. The refractory WNx self-aligned gate GaAs MESFET technology is one of the most promising candidates for realizing linear power amplifier ICs and multifunction monolithic ICs for use in the digital mobile communication systems such as hand-held phone(HHP), personal communication system (PCS) and wireless local loop(WLL).

• Journal of the Korean Society for Nondestructive Testing
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• 제10권2호
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• pp.56-62
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• 1990

Surface Acoustic Waves(SAW) are generated on silicon wafer and $YZ-LiTaO_3$ substrate and are detected by noncontact method. As wave sources two kinds of transducers are used : the wedge-type of 20.0 MHz and fabricated Interdigital Transducer(IDT) of 20.8 MHz. SAW are modulated by the optical chopper frequency and are syncronized with a laser beam. In signal processing, intensity variations of light due to the intensity of SAW are analyzed using lock- in amplifier. From the results, corresponding to the applied input power, the intensity variations of a deflected light by corrugations on the substrates are increased and saturation phenomenon is observed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.289-292
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• 2005

New poly-Si TFTs have been proposed and fabricated in order to increases the output channel resistance ($r_o$). The counter-doped($p^+$) source is tied to the $n^+$ source and is extended into the channel region so that it employs the reverse bias depletion in the channel. As $V_{DS}$ is increased, the depletion width is increased and the effective channel width is reduced. Therefore, the output current saturates well and the $r_o$ is increased successfully. The proposed CMOS devices may improve the amplifier gain of data driver in active-matrix displays

• ETRI Journal
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• 제39권6호
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• pp.771-781
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• 2017

For efficient spectral utilization of satellite channels, a shared band transmission technique is introduced in this paper. A satellite transmits multiple received signals from a gateway and terminal in the common frequency band by superimposing the signals. To improve the power efficiency as well as the spectral efficiency, a travelling wave tube amplifier in the satellite should operate near the saturation level. This causes a nonlinear distortion of the superimposed transmit signal. Without mitigating this nonlinear effect, the self-interference cannot be properly cancelled and the desired signal cannot be demodulated. Therefore, an adaptive compensation scheme for nonlinearity is herein proposed with the proper operation scenario. It is shown through simulations that the proposed shared band transmission approach with nonlinear compensation and self-interference cancellation can achieve an acceptable system performance in nonlinear satellite channels.

• The Journal of Korean Institute of Communications and Information Sciences
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• 제21권9호
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• pp.2456-2469
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• 1996

A digital satellite communication channel has a nonlinearity with memory due to saturation characeristis of the high poer amplifier in the satellite and transmitter/receiver linear filter used in the overall system. In this paper, we propose a complex radial basis function network(CRBFN) based adaptive equalizer for compensation of nonlinearities in digital satellite communication channels. The proposed CRBFN untilizes a complex-valued hybrid learning algorithm of k-means clustering and LMS(least mean sequare) algorithm that is an extension of Moody Darken's algorithm for real-valued data. We evaluate performance of CRBFN in terms of symbol error rates and mean squared errors nder various noise conditions for 4-PSK(phase shift keying) digital modulation schemes and compare with those of comples pth order inverse adaptive Volterra filter. The computer simulation results show that the proposed CRBFN ehibits good equalization, low computational complexity and fast learning capabilities.