• Proceedings of the Optical Society of Korea Conference
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• 1996.09a
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• pp.11-11
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• 1996

• Proceedings of the Optical Society of Korea Conference
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• 2002.11a
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• pp.90-91
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• 2002

• Korean Journal of Optics and Photonics
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• v.17 no.6
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• pp.556-563
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• 2006

We present a comprehensive study of a chirped pulse Ti:sapphire regenerative amplifier system operating at 1 kHz. Main constituents of the system are described in detail. The amplifier stage was first converted to a repetition rate-tunable kHz gain-switched nanosecond Ti:sapphire laser. Operation characteristics at different repetition rates such as build-up times of laser pulses, pump power-dependent output powers and pulse durations, damage thresholds, and tunability ranges were studied. Based on the results achieved, the switching time of the Pocket's cell used and the round trip numbers in the regenerative amplifier were optimized at 1 kHz. The output pulses with a pulse width of 50fs from a home-made Ken lens mode-locked Ti:sapphire oscillator were used as seed pulses. The pulses were expanded to 120ps in a grating stretcher prior to coupling into the 3-mirror amplifier cavity. After amplification and recompression, a stable 1kHz Ti:sapphire regenerative amplifier system, which delivers 85-fs, $320-{\mu}J$ pulses, was fully constructed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.1-9
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• 1998

In this study, we have investigated the preparation conditions of 45$\times$45$\times$20(mm) square cross-section sapphire single crystal by the modified heat exchanger method using water as a coolant. Melting and solidification processes were optimized by the systematic change of the chamber pressure with the heater temperature. As a results, solidification temperature was between 1960 and $1970^{\circ}C$. The crucible was formed by handling. Therefore its shape should had the 'spiral type' ear at edge of its side. Heat exchanger affected to the temperature distribution and gradient of molten alumina. Heat flux and unmelted seed were controlled by volume of heat exchanger. Voids were controlled by the cooling rate of the heater below $0.2^{\circ}C$/min.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.2
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• pp.102-107
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• 2017

This study focuses on the effect of the elasticity modulus of jig material on blade edge shape in the grinding process of a sapphire medical knife. The ELID grinding process was applied as the edge-grinding method for sapphire material. Carbon steel and copper have been selected as the hard and soft jig materials, respectively. The blade edge created by ELID grinding was measured by a surface roughness tester and optical microscope. The shape of the ground edge and surface roughness were compared using the measurement results. As a result, it was found that chipping in the blade edge of the sapphire knife occurred more than in the case of jig material with a high-elasticity modulus because of the high normal force in the grinding process. Moreover, the maximum height surface roughness, $R_{max}$,of the ground surface was higher in the case of the jig material with a high-elasticity modulus due to the difference in elasticelongation. It was considered to lead to chipping from the notch effect.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.2
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• pp.224-230
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• 2015

In this study, the machinability of sapphire glass is tested using the powder blasting method under various blasting conditions. The thickness and diameter of the sapphire glass samples were 0.4 mm and 50.8 mm (2 inch), respectively. The machined patterns from each sample were a circle, a square, and a rectangle. The powder we used was GC #400 and #800. The blasting pressures of the powders were 2, 4, and 6 bar. The scanning time of the nozzle was 20 and the scanning speeds of the nozzle were 80, 100, and 120 mm/s. Experimental results showed that machining depths increased in proportion to blasting pressure. The machining depth of GC #800 was much higher than that of GC #400, while surface roughness was worst with GC #400. These results imply that the blasting pressure and size of the blasting powder are the most important parameters for machining sapphire glass.

• Journal of Technologic Dentistry
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• v.25 no.1
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• pp.21-28
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• 2003

The purpose of this study was to process bio-active glass ceramic composite, reinforced with sapphire fibers, by hot press. Also to study the interface of the matrix and the sapphire fiber, and the mechanical properties. Glass raw materials melted in Pt crucible at 1300$^{\circ}C$ during 3.5 hours. The melt was crushed in ball mill and then crushed material, ground and sieved to $<40{\beta}{\mu}m$. Sapphire fibers cut (30mm) and aligned. Powder and fibers hot pressed. The micrographs show good bonding between the matrix and the fiber and no porosity in the glass matrix. This means ideal fracture phenomena. Glass is fractured before the fiber. This is indication of good fracture strength. EDXS showing aluminum rich phase and crystalline phase. Bright field image of the matrix showing crystalline phase. Also diffraction pattern of TEM showing the crystalline phase and more than one phase. Strength of the samples was determined by 3 point bend testing. Strength of the 10vol% sample was approximately 69MPa, while strength of the control sample is 35MPa. Conclusions through this study as follow: 1. Micrographs show no porosity in the glass matrix and the interface. 2. The interface between the fiber and the glass matrix show no gaps. 3. Fracture of the glass indicates characteristic fiber-matrix separation. 4. Presence of crystalline phase at high processing temperature. 5. Sapphire is compatible with bioactive glass.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.90-94
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• 2006

We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.2
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• pp.13-19
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• 2010

Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.165-171
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• 2011

In this work, handling of sapphire substrate for LED by using an electrostatic chuck was studied. The electrostatic chuck consisted of alumina dielectric, which was doped with 1.2 wt% $TiO_2$. As the volume resistivity of alumina dielectric was decreased, the electrostatic force was increased by Johnsen-Rahbek effect. The narrower width and gap size of electrode led to the stronger electrostatic force. When alumina dielectric with $3.20{\times}10^{11}{\Omega}{\cdot}cm$ resistivity and 3 mm width/1.5 mm gap sized electrode was used, the strongest electrostatic force in this work was obtained, which value reached to ~14.46 gf/$cm^2$ at 2.5 kV for 4-inch sapphire substrate. This results show that alumina electrostatic chuck with low resistivity and fine electrode pattern is suitable for handling of sapphire substrate for LED.