• 한국광학회:학술대회논문집
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• 한국광학회 1996년도 Advance Program of 13th optics andquantum Electronics conference, 1996제13 회 광학 및 양자전자 학술 발표회 논문 요약집
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• pp.11-11
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• 1996

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 제13회 정기총회 및 2002년도 동계학술발표회
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• pp.90-91
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• 2002

• 한국광학회지
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• 제17권6호
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• pp.556-563
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• 2006

1kHz 반복률의 펨토초 펄스를 방출하는 안정된 Ti:sapphire 처프펄스 재생 증폭 시스템의 자체제작 및 최적화를 위해 시스템을 구성하는 각 요소들의 특성을 세부적으로 분석하였다. 사용된 증폭 공진기를 kHz 영역에서 반복률 변환 가능한 이득스위칭 레이저 구조로 변환하여 펄스 생성시간, 펌프출력에 따른 방출출력 특성 및 파괴여부, 펄스의 길이 및 파장가변 영역 등의 다양한 발진특성을 측정 분석하고, 이 결과를 기반으로 증폭 공진기를 설계하였으며, 내부에 설치된 포켈셀의 작동시간, 증폭 시 펄스의 공진횟수 등을 고려하여 증폭단을 최적화하였다. 증폭기의 종자펄스로는 자체제작된 커 렌즈 모드잠금 Ti:sapphire 레이저로부터 방출되는 50fs 펄스가 사용되었다. 종자펄스는 3개의 거울로 구성된 재생 증폭공진기에 입사되기 전에 펄스늘림기를 통해 120ps로 확대되었으며, 증폭 후 펄스길이의 재압축을 통해 815nm 영역에서 85fs, $320{\mu}J$의 극초단 펄스를 방출하는 1kHz 처프펄스 재생 증폭기를 제작하였다.

• 한국결정성장학회지
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• 제8권1호
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• pp.1-9
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• 1998

본 연구에서는 냉각매체로서 물을 이용하는 수정된 열교환법을 이용하여 45$\times$45$\times$20(mm) 크기의 사각단면 형상의 sapphire 단결정의 제조가능 조건에 대하여 조사하였다. 온도에 따른 성장로 내의 압력 변화로부터 사파이어의 용융 및 응고 과정을 추적할 수 있었으며, 이로부터 sapphire 단결정은 1970~$1960^{\circ}C$에서 응고가 완료됨을 알 수 있었다. 도가니 성형시 이루어지는 '귀'의 형태는 도가니 벽면과 접촉되지 않는 '나선형태'이어야 한다. 열유출부는 융액 내의 온도구배를 지배하며 융액내의 열유속과 씨앗 결정의 흔적은 Mo 봉의 체적 변화로서 조절할 수 있었다. 기공 형성을 억제하기 위해서는 $0.2^{\circ}C$/min 이하의 발열체의 냉각속도가 요구되었다.

• 한국기계가공학회지
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• 제16권2호
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• pp.102-107
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• 2017

This study focuses on the effect of the elasticity modulus of jig material on blade edge shape in the grinding process of a sapphire medical knife. The ELID grinding process was applied as the edge-grinding method for sapphire material. Carbon steel and copper have been selected as the hard and soft jig materials, respectively. The blade edge created by ELID grinding was measured by a surface roughness tester and optical microscope. The shape of the ground edge and surface roughness were compared using the measurement results. As a result, it was found that chipping in the blade edge of the sapphire knife occurred more than in the case of jig material with a high-elasticity modulus because of the high normal force in the grinding process. Moreover, the maximum height surface roughness, $R_{max}$,of the ground surface was higher in the case of the jig material with a high-elasticity modulus due to the difference in elasticelongation. It was considered to lead to chipping from the notch effect.

• 한국생산제조학회지
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• 제24권2호
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• pp.224-230
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• 2015

In this study, the machinability of sapphire glass is tested using the powder blasting method under various blasting conditions. The thickness and diameter of the sapphire glass samples were 0.4 mm and 50.8 mm (2 inch), respectively. The machined patterns from each sample were a circle, a square, and a rectangle. The powder we used was GC #400 and #800. The blasting pressures of the powders were 2, 4, and 6 bar. The scanning time of the nozzle was 20 and the scanning speeds of the nozzle were 80, 100, and 120 mm/s. Experimental results showed that machining depths increased in proportion to blasting pressure. The machining depth of GC #800 was much higher than that of GC #400, while surface roughness was worst with GC #400. These results imply that the blasting pressure and size of the blasting powder are the most important parameters for machining sapphire glass.

• 대한치과기공학회지
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• 제25권1호
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• pp.21-28
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• 2003

The purpose of this study was to process bio-active glass ceramic composite, reinforced with sapphire fibers, by hot press. Also to study the interface of the matrix and the sapphire fiber, and the mechanical properties. Glass raw materials melted in Pt crucible at 1300$^{\circ}C$ during 3.5 hours. The melt was crushed in ball mill and then crushed material, ground and sieved to $<40{\beta}{\mu}m$. Sapphire fibers cut (30mm) and aligned. Powder and fibers hot pressed. The micrographs show good bonding between the matrix and the fiber and no porosity in the glass matrix. This means ideal fracture phenomena. Glass is fractured before the fiber. This is indication of good fracture strength. EDXS showing aluminum rich phase and crystalline phase. Bright field image of the matrix showing crystalline phase. Also diffraction pattern of TEM showing the crystalline phase and more than one phase. Strength of the samples was determined by 3 point bend testing. Strength of the 10vol% sample was approximately 69MPa, while strength of the control sample is 35MPa. Conclusions through this study as follow: 1. Micrographs show no porosity in the glass matrix and the interface. 2. The interface between the fiber and the glass matrix show no gaps. 3. Fracture of the glass indicates characteristic fiber-matrix separation. 4. Presence of crystalline phase at high processing temperature. 5. Sapphire is compatible with bioactive glass.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.90-94
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• 2006

We report on the growth and characterization of InGaN/GaN MQWs on two different types of sapphire substrates and GaN substrates. The InGaN/GaN MQWs are grown by using metalorganic chemical vapor deposition. Our analysis of the satellite peaks in the HRXRD patterns shows, GaN substrates InGaN/GaN MQW compared to sapphire substrates InGaN/GaN MQW, more compressive strain on GaN substrates than on sapphire substrates. However, results of optical investigation of InGaN/GaN MQWs grown on GaN substrates and on sapphire substrates, which have lower Stokes-like shift of PL to GaN substrates compared to sapphire substrates, are shown to the potential fluctuation and the quantum-confined Stark effect induced by the built-in internal field due to spontaneous and straininduced piezoelectric polarizations. The InGaN/GaN MQWs are shown to quantify the Stokes-like shift as a function of x.

• 한국정밀공학회지
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• 제27권2호
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• pp.13-19
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• 2010

Due to the rapid spread of mobile handheld devices, industrial demands for micro-scale holes with a diameter of even smaller than $10{\mu}m$ in sapphire/silicon wafers have been increasing. Holes in sapphire wafers are for heat dissipation from LEDs; and those in silicon wafers for interlayer communication in three-dimensional integrated circuit (IC). We have developed a sapphire wafer driller equipped with a 532nm laser in which a cooling chuck is employed to minimize local heat accumulation in wafer. Through the optimization of process parameters (pulse energy, repetition rate, number of pulses), quality holes with a diameter of $30{\mu}m$ and a depth of $100{\mu}m$ can be drilled at a rate of 30holes/sec. We also have developed a silicon wafer driller equipped with a 355nm laser. It is able to drill quality through-holes of $15{\mu}m$ in diameter and $150{\mu}m$ in depth at a rate of 100holes/sec.

• 한국표면공학회지
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• 제44권4호
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• pp.165-171
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• 2011

In this work, handling of sapphire substrate for LED by using an electrostatic chuck was studied. The electrostatic chuck consisted of alumina dielectric, which was doped with 1.2 wt% $TiO_2$. As the volume resistivity of alumina dielectric was decreased, the electrostatic force was increased by Johnsen-Rahbek effect. The narrower width and gap size of electrode led to the stronger electrostatic force. When alumina dielectric with $3.20{\times}10^{11}{\Omega}{\cdot}cm$ resistivity and 3 mm width/1.5 mm gap sized electrode was used, the strongest electrostatic force in this work was obtained, which value reached to ~14.46 gf/$cm^2$ at 2.5 kV for 4-inch sapphire substrate. This results show that alumina electrostatic chuck with low resistivity and fine electrode pattern is suitable for handling of sapphire substrate for LED.