• Korean Journal of Optics and Photonics
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• v.4 no.4
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• pp.442-446
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• 1993

A flashlamp pumped Ti: sapphire laser was designed and fabricated in the laboratory. In order to find out the optimum pumping condition, three kinds of discharge circuits of which the pulse width are 10${\mu}s$, 45${\mu}s$, 65${\mu}s$ were designed. The fluorescent energy converter LD-490 of which the fluorescence spectra is coincident to the absorption band of Ti: sapphire was used to improve the laser efficiency. The laser output characteristics for three different concentrations of LD-490 and for three different pumping pulse widths were measured. As a result, the shorter the flashlamp pulse width, the higher the overall efficiency was achieved. When pumping light pulsewidth was 10${\mu}s$, the best efficiency was obtained at the concentration 1.0${\times}10^{-3}$mol/l of LD-490 dye. At lower concentrations the efficiencies were decreased.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.263-267
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• 2004

We have investigated the characteristics of a Nd:YAG laser pumped by a cw Ti:sapphire laser. When the pumping power of the Ti:sapphire laser was 850 ㎽, the maximum output power of the Nd:YAG laser was 450 ㎽. As a result, the slope efficiency for the output power of the Nd:YAG laser was measured to be 56%. We have also investigated the characteristics of a passively Q-switched Nd:YAG laser by using a Cr$^{4+}$:YAG as saturable absorber with initial transmission of 90%. The maximum average output power of 200 ㎽ was obtained with repetition rate of 23.8 KHz and pulse width of 17.0 ns.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.3
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• pp.247-252
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• 2012

This study has been focused on application of ELID mirror-surface grinding technology for manufacturing single crystal optic sapphire. Single crystal sapphire is a superior material with optic properties of high performance as light transmission, thermal conductivity, hardness and so on. Mirror-surface machining technology is necessary to use sapphire as optic parts. The ELID grinding system has been set up for machining of the sapphire material. According to the ELID experimental results, it shows that the surface of sapphire can be eliminated by metal bonded wheel with micron abrasives and the surface roughness of 60nmRa can be gotten using grinding wheel of 2,000 mesh in 4.5um, depth of cut. In this study, the chemical experiments after ELID grinding also has been conducted to check chemical reaction between workpiece and grinding wheel on ELID grinding process. It shows that the chemical reaction has not happened as the results of the chemical experiments.

• Tribology and Lubricants
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• v.34 no.6
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• pp.209-216
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• 2018

Sapphire is a substrate material that is widely used in optical and electronic devices. However, the processing of sapphire into a substrate takes a long time owing to its high hardness and chemical inertness. In order to process the sapphire ingot into a substrate, ingot growth, multiwire sawing, lapping, and polishing are required. The lap grinding process using pellets is known as one of the ways to improve the efficiency of sapphire substrate processing. The lap grinding process ensures high processing efficiency while utilizing two-body abrasion, unlike the lapping process which utilizes three-body abrasion by particles. However, the lap grinding process has a high material removal rate (MRR), while its weakness is in obtaining the required surface roughness for the final polishing process. In this study, we examine the effects of free abrasives in lap grinding on the material removal characteristics of sapphire substrate. Before conducting the lap grinding experiments, it was confirmed that the addition of free abrasives changed the friction force through the pin-on-disk wear test. The MRR and roughness reduction rate are experimentally studied to verify the effects of free abrasive concentration on deionized water. The addition of free abrasives (colloidal silica) in the lap grinding process can improve surface roughness by three-body abrasion along with two-body abrasion by diamond grits.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.422-427
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• 2003

Sapphire have been ground by the ultra-precision surface grinder having a glass -ceramic spindle of extremely-low thermal expansion with various cup-type resinoid-bonded diamond wheels of #400-#3000 in grain size. Sapphire can be ground in the ductile mode. And also, the surface roughness and grinding conditions has been clarified. The smooth surface of Sapphire less than 1nm RMS, 1nm Ra can be obtained by the ultra-precision grinding without any polishing Process.

• Tribology and Lubricants
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• v.32 no.2
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• pp.56-60
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• 2016

Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

• Proceedings of the Optical Society of Korea Conference
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• 1991.07a
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• pp.71-75
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• 1991

Ti-Sapphire 레이저는 광대역 특성 때문에 최근 색소레이저의 대체 레이저로써 활발히 연구되고 있다. 본연구에서는 고분해 분광학의 광원으로 이용하기 위해 설계 제작한 단일 종모드로 동작하는 Ti:Sapphire 레이저의 특성에 대해 논한다.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.115-120
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• 1990

The spectroscopic properties of Cr3+-doped sapphire and Ti3+-doped sapphire fibers are reported. Tensile stress produces blue shifts of the R lines and changes in their radiative lifetimes and integrated intensities which can be correlated to stress-induced changes of the crystal-field parameters in a Cr3+-doped sapphire fiber. A net red shift of the zero phonon fluorescence line of 2Eg state and a decrease of the splittings of 2T2g state with uniaxial stress are observed in a Ti3+-doped sapphire. In excitation spectra the two peaks from the 2Eg state are shifted to the blue with different rates. The changes are attributed to the stress-induced changes of crystal field and Jahn-Teller effect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.1
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• pp.7-11
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• 2011

Sapphire substrate was patterned by a selective chemical wet etching technique, and GaN/InGaN structures were grown on this substrate by MOVPE (Metal Organic Vapor Phase Epitaxy). The surface of grown GaN on patterned sapphire substrate (PSS) has good morphology and uniformity. The patterned sapphire substrate LED showed better light output than conventional LED that improvement 50%. We think these results come from enhancement of internal quantum efficiency by decrease of threading dislocation and increase of light extraction efficiency. Also these LED showed more uniform emission distribution in angle than conventional LED.