• 제목/요약/키워드: Samsung

검색결과 10,979건 처리시간 0.039초

TFT-LCD Employing RGBW Color

  • Lee, Baek-Woon;Song, Keun-Kyu;Yang, Young-Chol;Park, Cheol-Woo;Oh, Joon-Hak;Chai, Chong-Chul;Choi, Jeon-Gye;Roh, Nam-Seok;Hong, Mun-Pyo;Chung, Kyu-Ha;Lee, Seong-Deok;Kim, Chang-Yong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1103-1107
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    • 2004
  • Last year, we introduced a TFT-LCD with RGBW color system. The primary advantage of the RGBW system is that its optical efficiency is at least 50% higher than the RGB system. However, it is not a simple task to incorporate the new color system into the infrastructure of the RGB system: the driving circuitry, fabrication of color filter, and color conversion. In this report, the practical hurdles are discussed and the solutions are presented.

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Integration of 4.5' Active Matrix Organic Light-emitting Display with Organic Transistors

  • Lee, Sang-Yun;Koo, Bon-Won;Jeong, Eun-Jeong;Lee, Eun-Kyung;Kim, Sang-Yeol;Kim, Jung-Woo;Lee, Ho-Nyeon;Ko, Ick-Hwan;Lee, Young-Gu;Chun, Young-Tea;Park, Jun-Yong;Lee, Sung-Hoon;Song, In-Sung;Seo, O-Gweon;Hwang, Eok-Chae;Kang, Sung-Kee;Pu, Lyoung-Son;Kim, Jong-Min
    • Journal of Information Display
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    • 제7권4호
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    • pp.21-23
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    • 2006
  • We developed a 4.5" 192${\times}$64 active matrix organic light-emitting diode display on a glass using organic thin-film transistor (OTFT) switching-arrays with two transistors and a capacitor in each sub-pixel. The OTFTs has bottom contact structure with a unique gate insulator and pentacene for the active layer. The width and length of the switching OTFT is 800${\mu}m$ and lO${\mu}m$ respectively and the driving OTFT has 1200${\mu}m$ channel width with the same channel length. On/off ratio, mobility, on-current of switching OTFT and on-current of driving OTFT were $10^6,0.3{\sim}0.5$ $cm^2$/V·sec, order of 10 ${\mu}A$ and over 100 ${\mu}A$, respectively. AMOLEDs composed of the OTFT switching arrays and OLEDs made using vacuum deposition method were fabricated and driven to make moving images, successfully.

Optimization of a-IGZO Thin-Film Transistors for OLED Applications

  • Chung, Hyun-Joong;Yang, Hui-Won;Kim, Min-Kyu;Jeong, Jong-Han;Ahn, Tae-Kyung;Kim, Kwang-Suk;Kim, Eun-Hyun;Kim, Sung-Ho;Im, Jang-Soon;Choi, Jong-Hyun;Park, Jin-Seong;Jeong, Jae-Kyeong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1097-1100
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    • 2008
  • We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

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Ultra low sheet resistance on poly silicon film by Excimer laser activation

  • Lim, Hyuck;Yin, Huaxiang;Xianyu, Wenxu;Kwon, Jang-Yeon;Zhang, Xiaoxin;Cho, Hans-S;Kim, Jong-Man;Park, Kyung-Bae;Kim, Do-Young;Jung, Ji-Sim;Noguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1112-1115
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    • 2005
  • In this study, we performed excimer laser activation on Phosphorus or Boron doped a-Si (amorphous silicon) film. We've got a very low sheet resistance (Rs), Rs was 60 ohm/sq. with phosphorus doping and was 65 ohm/sq. with boron doping at each optimized laser irradiation condition. We've found Rs on activated thin film showed an unprecedented behavior in both cases, because Rs had a strong dependency on the crystallinity of the activated Si film.

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High Speed Pulse-based Flip-Flop with Pseudo MUX-type Scan for Standard Cell Library

  • Kim, Min-Su;Han, Sang-Shin;Chae, Kyoung-Kuk;Kim, Chung-Hee;Jung, Gun-Ok;Kim, Kwang-Il;Park, Jin-Young;Shin, Young-Min;Park, Sung-Bae;Jun, Young-Hyun;Kong, Bai-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권2호
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    • pp.74-78
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    • 2006
  • This paper presents a high-speed pulse-based flip-flop with pseudo MUX-type scan compatible with the conventional master-slave flip-flop with MUX-type scan. The proposed flip-flop was implemented as the standard cell library using Samsung 130nm HS technology. The data-to-output delay and power-delay-product of the proposed flip-flop are reduced by up to 59% and 49%, respectively. By using this flop-flop, ARM11 softcore has achieved the maximum 1GHz operating speed.

Field Emission Display and Backlight for LCD using Printed Carbon Nanotubes

  • Kim, Yong-Churl;Jung, D.S.;Song, B.K.;Bae, M.J.;Kang, H.S.;Han, I.T.;Kim, Jong-Min;Choi, Y.C.;Hwang, M.I.;Kim, I.H.;Park, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.1045-1048
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    • 2007
  • We mainly report recent progress in backlight unit (BLU) for liquid crystal display (LCD) using printed carbon nanotubes (CNTs) including top-gate and lateral gate structures. Lighting performances of CNTBLU and longevity of printed CNT emitters are intensively discussed. Selected issues related with field emission display (FED) using the same emitters also are presented.

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