• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.373-377
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• 2004

We have investigated the electrical characterization of metal-oxide-semiconductor (MOS) capacitors formed on the inductively coupled plasma (ICP) etch-damaged both n- and p-type 4H-SiC. We found that there was an effect of a sacrificial oxidation treatment on the etch-damaged surfaces. Current-voltage and capacitance-voltage measurements of these MOS capacitors were used and referenced to those of prepared control samples without etch damage. It has been found that a sacrificial oxidation treatment can improve the electrical characteristics of MOS capacitors on etch-damaged 4H-SiC since the effective interface density and fixed oxide charges of etch-damaged samples have been found to increase while the breakdown field strength of the oxide decreased and the barrier height at the SiC-SiO$_2$ interface decreased for MOS capacitors on etch-damaged surfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.435-439
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• 2016

We developed a Ag nanowire patterning technique using a water-soluble sacrificial layer. To form a water-soluble sacrificial layer, germanium was deposited on the substrate and then water-soluble germanium oxide was simply formed by thermal oxidation of germanium using a conventional furnace. The formation of Ag nanowire patterns with various line and space arrangements was successfully demonstrated using this patterning process. The main advantage of this patterning technique is that it does not use a strong acid etchant, thereby preventing damage to the Ag nanowire during the patterning process.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.71-77
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• 1996

Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.327-333
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• 2002

In order to obtain the oxidation layer for SiC MOS, the oxide layers by thermal oxidation process with dry and wet method were deposited and characterized. Deposition temperature for oxidation layer was $1100^{\circ}C$~130$0^{\circ}C$ by $O_2$ and Ar atmosphere. The oxide thickness, surface morphology, and interface characteristic of deposited oxide layers were measurement by ellipsometer, SEM, TEM, AFM, and SIMS. Thickness of oxidation layer was confirmed 50nm and 90nm to with deposition temperature at $1150^{\circ}C$ and $1200{\circ}C$ for dry 4 hours and wet 1 hour, respectively. For the high purity oxidation layer, the necessity of sacrificial oxidation which is etched for the removal of the defeats on the wafer after quickly thermal oxidation was confirmed.

• Journal of the Korean Chemical Society
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• v.46 no.5
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• pp.444-456
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• 2002

To protect the occurrence of the oxidation of car body, we developed antioxidizing device made with sacrificial anode. Because car body is made of iron and iron-alloy and oxidation potential of Mg, Al and Zn is higher than that of iron, sacrificial anodes were made with Mg, Al and Zn. Accordingly, Mg, Al and Zn are better oxidizing than car body, iron and iron-alloy can be protected from oxidizing. We have made an antioxidizing device and evaluated their anti-corrosive effect for iron piece in the solution of hydrochloric, nitric and sulfuric acid using balance, SEM and XPS. When iron pieces were connected with antioxidizing device of car body, weight loss by oxidation was remarkably reduced and surface corrosion of iron piece was protected. It was shown that the surface of iron pieces which is not con-nected to the device was changed to iron(Ⅲ) oxide, Fe$_2$O$_3$. Therefore, if this device is attached to car body, corrosion and oxidation of car body will be reduced, considerably.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.83-83
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• 2008

Metal-oxide-silicon-on-insulator (MOSOI) structures were fabricated to study the effect caused by reactive ion etching (RIE) and sacrificial oxidation process on silicon-on-insulator (SOI) layer. The MOSOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching treatment. The measured C-V curves were compared to the numerical results from 2-dimensional (2-D) simulations. The measurements revealed that the profile of C-V curves significantly changes depending on the SOI surface condition of the MOSOI capacitors. The shift in the measured C-V curves, due to the difference of the fixed oxide charge ($Q_f$), together with the numerical simulation analysis and atomic force microscopy (AFM) analysis, allowed extracting the fixed oxide charges ($Q_f$) in the structures as well as 2-D carrier distribution profiles.

• Proceedings of the KIEE Conference
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• 1988.07a
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• pp.328-331
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• 1988

Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.232-233
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• 2005

Stainless steel has been stably used closed by passivity oxidation films($Cr_2O_3$) is made by neutral atmospheric environment. However, passivity oxidation films of the surface of stainless steel occasionally comes to be destroyed in seawater which is influenced by an environment having halogen ion like $Cl^-$, then, localization corrosion comes to occur. Stainless steel 304 for shaft system material of the small-size FRP fishing boat on seawater environments made an experiment on simulation of sacrifical anode(Al, Zn). Through these experiment and study, following results have been obtained ; According to the field inspection and corrosion simulation, the corrosion on the 2nd class stainless steel shaft(STS 304) in FRP fishing boat has been verified to occur by crevice corrosion and galvanic corrosion etc.. According to the comparison and analysis of Stainless steel 304 shaft materials after simulation leaving unprotected and applying cathodic protection, unprotected shaft specimen of stainless steel 304 was severely corroded, but, protected shaft specimen was not totally corroded. This result is assumed to be made by the facts that anodic reaction, $Fe{\rightarrow}Fe^{2+}$ + $2e^-$, has been restricted by the cathodic protection current of sacrificial anode material.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.8
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• pp.711-714
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• 2008

Metal-oxide-semiconductor (MOS) capacitors were fabricated to investigate the plasma damage caused by reactive ion etching (RIE) on (100) oriented silicon-on-insulator (SOI) substrates. The thickness of the top-gate oxide, SOI, and buried oxide layers were 10 nm, 50 nm, and 100 nm, respectively. The MOS/SOI capacitors with an etch-damaged SOI layer were characterized by capacitance-voltage (C-V) measurements and compared to the sacrificial oxidation treated samples and the reference samples without etching. The measured C-V curves were compared to the numerical results from corresponding 2-dimensional (2-D) structures by using a Silvaco Atlas simulator.

• Journal of Electrochemical Science and Technology
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• v.7 no.4
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• pp.286-292
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• 2016

Chemically amplified electrochemical detection, redox-active probe being amplified its electrochemical anodic current by a sacrificial electron donor presenting in solution, holds great potential for simple and quantitative bioanalytical analysis. Herein, we report the chemically amplified electrochemical analysis that drastically enhanced a detection of ferrocenemethanol (analyte) by ferrocyanide (chemical amplifier) on 4-nitrophenyl grafted glassy carbon electrodes at $60^{\circ}C$. The glassy carbon electrode grafted with a 4-nitrophenyl group using an electrochemical reduction suppressed the oxidation of ferrocyanide and thus enabled detection of ferrocenemethanol with excellent selectivity. The ferrocenemethanol was detected down to an nM range using a linear sweep voltammetry under kinetically optimized conditions. The detection limit was improved by decreasing the concentration of the ferrocyanide and increasing temperature.