Journal of Sensor Science and Technology (센서학회지)
- Volume 5 Issue 1
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- Pages.71-77
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- 1996
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Characteristics of Poly-Oxide of New Sacrificial Layer for Micromachining
마이크로머시닝을 위한 새로운 희생층인 다결정-산화막의 특성
- Hong, Soon-Kwan (Dept. of Electronics, Hyejeon Junior College) ;
- Kim, Chul-Ju (Dept. of Electronics, Seoul City Univ.)
- Published : 1996.01.31
Abstract
Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.
마이크로머시닝의 구조재료인 다결정 Si이 희생산화막의 영향을 받음을 고려하여 다결정 Si을 열산화시킨 다결정-산화막을 새로운 희생산화막의 재료로서 제안하고 평가하였다. 다결정-산화막상에 성장시킨 다결정 Si은 통상의 희생산화막상에 성장시키는 경우보다 grain size가 증가하였고, XRD결과를 통해 (111) texture의 증가와, 부가적인 (220) texture가 형성됨을 관찰하였다. 또한, 다결정-산화막상에 성장시킨 다결정 Si의 경우, 그 응력이 작고 균일한 분포를 나타내었다.
Keywords