• 한국분말재료학회지
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• 제19권6호
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• pp.412-415
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• 2012

The quartz glasses were prepared by sintering of fumed silica powders and the effect of OH concentration on their surface on sintering was studied. Through the firing process, the fumed silica was crystallized from 1180 to $1260^{\circ}C$ region. The amount of hydroxyl group decreased with increase in calcination temperature and consequently the crystallization was prevented. A transparent quartz glass was obtained from fumed silica, previously calcined at $1000^{\circ}C$, by the sintering at $1250^{\circ}C$ for 1 h.

• 에너지공학
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• 제26권2호
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• pp.73-79
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• 2017

In nucleation assisted crystallization process formed $CO_2$ leaves as colloid gas and is used as the template by the rapidly growing crystals in the nucleation site. This emulsion of $CaCO_3$ micro-crystals & $CO_2$ micro-bubbles forms hollow particles. Formed hollow particles are double walled, both internal and external faces belonging to the cleavage aragonites which separate the surrounding water from the enclosed gas cavity. Hence, the reverse reaction of $CO_2$ with water forming Carbonic Acid is not possible and the pH stability is maintained. In fact every excess $CaCO_3$ crystals are buffering any carbonic acid left over. This $CO_2$ based nucleation technology prevents scale formation in water channels, but it also helps to reduce the previously formed scales. This process takes out water dissolved $CO_2$ in almost-visible micro-bubbles forms that helps reducing previously formed scale over a period of time (depends on the usage period). The aragonite crystals can't form scale because of its stable molecular structure and neutral surface electro potentiality.

• 한국분말재료학회지
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• 제12권6호
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• pp.433-440
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• 2005

The hydrogen sorption speed of $Zr_{57}V_{36}Fe_7$ nanocrystalline and amorphous alloys was evaluated at room temperature. Nanocrystalline alloys of $Zr_{57}V_{36}Fe_7$ were prepared by planetary ball milling. The hydrogen sorption speed of nanocrystalline alloys was higher than that of the amorphous alloy. The enhanced sorption speed of nanocrystalline alloys was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation can be reduced by formation of nanocrystals, which results in the observed increase in sorption properties.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• 한국입자에어로졸학회지
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• 제11권4호
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• pp.107-113
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• 2015

SBA-16 (Santa Barbara Amorphous) was synthesized over supported $TiCl_4/MgCl_2$. Due to its high surface area and excellent morphological performance, it was expected to form the bi-supported catalytic system and be used for ethylene polymerization. Polymerization of ethylene was carried out at atmospheric pressure using hexane as solvent and triethylaluminium as cocatalyst. ICP, FTIR, DSC, TG-DTA were used to characterize polyethylene and catalyst product. Optimum conditions for ethylene polymerization were found to be 100 mL hexane, Al/Ti molar ratio of 160 and 1 h polymerization at $60^{\circ}C$. The activity of 396.76 kg PE/mol Ti.h.atm was achieved. Melting point of the obtained polymer was in the range of $132-135^{\circ}C$ and the highest degree of crystallization was 46%.

• 한국세라믹학회지
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• 제31권11호
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• pp.1337-1345
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• 1994

Glasses in the system of 45CaO-25TiO2-30P2O5 containing 1 mole% of M2O(M=Li, Na, K) were melted and crystallized. And their crystal phases were Ca3(PO4)2, CaTi4(PO4)6, and TiO2. Porous glass-ceramics with skeleton of two crystal phase CaTi4(PO4)6 and TiO2 were prepared by selective leaching of Ca3(PO4)2 with 0.1 N-HCl. Glass transition temperature(Tg) and crystallization temperature(Tc) were decreased by addition of 1 mole% alkali metal oxide. Pore size of porous glass-ceramics was increased with increasing heat treatment temperature and its dependence on heat treatment temperature was decreased with addition of Na2O and K2O. It was found that porous glass-ceramics of parent glass and containing 1mole% M2O(M=Li, Na, K) composition had maximum specific surface area, porosity and maximum of crystallzed phase by heat treatment at 80$0^{\circ}C$, 76$0^{\circ}C$, 78$0^{\circ}C$, 80$0^{\circ}C$ respectively.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.351-360
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• 1999

A large NaX type zeolite crystal of a uniform particle size of 20${\mu}{\textrm}{m}$ are grown with various H2O content by hydrothermal reaction and added seed crystal (2~3 ${\mu}{\textrm}{m}$) to reactant solution as a function of different adding seed levels from 3 to 15 %. The result that increased purity of NaX zeolite above 95% and homogeneity of crystal size by increasing adding seed levels, also decreased crystallization time. It was explained that adding seed to synthesis solution leaded out increase of surface area of physical contact reaction and directed growth of seed crystal, so more rapid consumption of reaction gel as increase seeding levels.

• 한국결정성장학회지
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• 제18권2호
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• pp.76-80
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• 2008

본 연구에서는 ATO 박막의 전도 특성향상을 위하여 RF 마그네트론 스퍼터링을 이용하여, 6 wt%의 Sb가 첨가된 $SnO_2$ 박막을 합성을 진행하였으며, 박막합성시 스퍼터링 가스인 아르곤(Ar)과 반응가스인 산소($O_2$)의 분압 비율의 증가에 따른 ATO 박막의 구조적, 전기적, 광학적 특성들의 고찰하였다. 결과적으로 산소/아르곤의 비율이 0.11에서 $8{\times}10^{-3}[{\Omega}{\cdot}cm]$의 비저항과 85.17%, 그리고 retile 구조의 이상적인 전도특성과 투과특성, 그리고 결정화를 이룬 ATO 박막 얻었다.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.