• 한국세라믹학회지
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• 제33권9호
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• pp.1057-1063
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• 1996

Y2O3-CeO2-ZrO2 powders were prepared from water-soluble salts using a coprecipitation method. The forming process of oxide and the characteristics of the calcined powders treated in different drying conditions were investigated. The oxidation was occurred at the temperature of around 40$0^{\circ}C$ and the main crystallization of ZrO2 around $600^{\circ}C$. On calcination at $600^{\circ}C$ heating lamp-dried powders consisted of agglomerates of globular morphology with average agglomerate size of 2.27${\mu}{\textrm}{m}$ and specific surface area of 68.3m2/g and spray dried powders contained dense spheric particles with average agglomerate size of 1.35${\mu}{\textrm}{m}$ and specific surface area of 11.0m2/g which exhibited low agglomeration tendency. Removal of the water by a freeze-drying technique produced calcined powders containing flake-like secondary particle structures with wide agglomerate size distri-bution of 0.1-60${\mu}{\textrm}{m}$ and specific surface area of 24.5${\mu}{\textrm}{m}$. The 20 MPa-pressed density (36.8-41.4% T,D) of calcined powders did not nealy depend on drying methods whilst compaction ratio of calcined powders derived from freeze-drying was the highest ( 6.24) among three drying methods. On continuous heating up to 150$0^{\circ}C$ the sinterability of calcined powders derived from heating lamp-drying was superior to those derived from spray-and freeze-drying. The final sintered density of calcined powders was the highest (96% T,D at 150$0^{\circ}C$) in case of heating lamp-drying.

• 한국정보통신학회논문지
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• 제6권5호
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• pp.696-702
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• 2002

RF magnetron reactive sputtering 법으로 BST(Bal-xSrxTiO$_3$)(50/50) 박막을 제작하여, 박막의 결정화 특성 및 표면상태와 함께 박막의 두께에 따른 전기적 특성을 조사하였다. XRD와 AFM을 이용하여 BST 박막의 결정화 특성과 표면상태를 관찰한 결과, 80$0^{\circ}C$ 에서 2분간 후열처리한 박막은 완전한 perovskite 구조를 가지며 표면거칠기도 16.1$\AA$으로 양호한 값을 나타내었다. 박막의 두께가 80nm에서 240nm으로 증가함에 따라 10KHz에서 비유전률은 199에서 265로 증가하였고, 250㎸/cm의 전기장에서 누설 전류밀도는 $0.779 {\mu}m/{cm^2}에서 0.184 {\mu}A/{cm^2}$으로 감소하였다. 두께 240nm인 BST 박막의 경우, 5V에서의 전하축적 밀도와 누설전류밀도는 각각 50.5 $fC/{{\mu}m^2} 와 0.182 {\mu}A/{cm^2}$로, 이는 DRAM의 캐패시터 절연막 응용에 매우 유망한 물질임을 나타내는 결과이다.

• 공업화학
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• 제22권5호
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• pp.490-494
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• 2011

본 연구에서는 PET와 Nylon66의 블렌드에 몬모릴로나이트(PM) 또는 유기화제로 개질된 clay (Cloisite 25A 또는 15A)를 첨가하여 PET/Nylon66/clay 나노복합재료를 제조하였다. 나노복합재료는 용융삽입법을 이용하여 제조하였고 DSC 측정을 이용하여 분석한 결과 clay의 첨가로 인해 PET/Nylon66 블렌드의 결정화특성이 변화되는 것을 확인하였다. 특히 C25A가 PET/Nylon66 블렌드와의 상호작용이 가장 커서 결정화온도를 가장 크게 변화시키는 것으로 나타났다. 나노복합재료의 표면을 AFM으로 관찰한 결과에서도 C25A를 이용한 나노복합재료가 가장 표면의 굴곡이 적어서 상대적으로 표면이 균일한 것으로 나타났고 기계적 물성측정에서도 전반적으로 C25A를 이용한 나노복합재료가 우수한 물성을 나타내는 것으로 관찰되었다. 각 나노복합재료의 표면 극성도를 조사하기 위하여 접촉각 측정을 하였는데 유기화 정도가 클수록 표면의 접촉각이 커져서 극성이 낮아지는 것을 확인하였다.

• 한국결정성장학회지
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• 제13권1호
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• pp.5-14
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• 2003

Principles of a novel pulse growing method are described. The method realized in the crystal growing on a seed from melts under raw melt feeding provided a more reliable control of the crystallization process when producing large alkali halide crystals. The slow natural convection of the melt in the crucible at a constant melt level is intensified by rotating the crucible, while the crystal rotation favors a more symmetrical distribution of thermal stresses over the crystal cross-section. Optimum rotation parameters for the crucible and crystal have been determined. The spatial position oi the solid/liquid phase interface relatively to the melt surface, heaters and the crucible elements are considered. Basing on that consideration, a novel criterion is stated, that is, the immersion extent of the crystallization front (CF) convex toward the melt. When the crystal grows at a <> CF immersion, the raised CF may tear off from the melt partially or completely due to its weight. This results in avoid formation in the crystal. Experimental data on the radial crystal growth speed are discussed. This speed defines the formation of a gas phase layer at the crystal surface. The layer thickness il a function of time a temperature at specific values of pressure in the furnace and the free melt surface dimensions in the gap between the crystal and crucible wall. Analytical expressions have been derived for the impurity component mass transfer at the steady-state growth stage describing two independent processes, the impurity mass transfer along the <> path and its transit along the <> one. The heater (and thus the melt) temperature variation is inherent in any control system. It has been shown that when random temperature changes occur causing its lowering at a rate exceeding $0.5^{\circ}C/min$, a kind of the CF decoration by foreign impurities or by gas bubbles takes place. Short-term temperature changes at one heater or both result in local (i.e., at the front) redistribution of the preset axial growth speed.

• 자원리싸이클링
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• 제12권4호
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• pp.20-29
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• 2003

본 연구에서는 새도우마스크 제조공정 중 발생되는 Fe-Ni 계 폐산용액을 효율적으로 재활용하기 위하여 폐산용액을 자체 제작한 분무열분해 system을 이용하여 분무열분해시킴에 의해 평균입도 100nm 이하의 니켈 페라이트($NiFe_2$$O_4$)나노 분발을 제조하였으며 반응온도, 용액의 농도 및 용액 유입속도의 반응인자들의 변화에 따른 생성된 분발의 특성변화를 파악하였다. 반응온도가 800∼$1100^{\circ}C$ 로 증가함에 따라 분무열분해 공정에 의해 생성된 분말의 평균입도가 현저히 증가하였고 점점 치밀한 조직을 나타내었으며 비표면적은 크게 감소하였다. 반응온도의 증가에 따라 니첼 페라이트 상의 생성비율 및 결정성이 증가하였다. 원료용액의 농도가 증가됨에 따라 분말의 평균입도는 점점 증가하고 비표면적은 감소하는 반면 입도분포는 더욱 불규칙하게 나타났다. 용액의 농도 증가에 따라 니켈 폐라이트 상의 생성비율 및 결정성은 현저히 증가하고 있었다. 용액의 유입속도 증가에 따라 분말들의 평균입도는 현저히 증가하고 비표면적은 감소하는 반면 입도분포는 불규칙하게 되며 조직의 치밀성도 감소하였다. 용액의 유입속도 감소에 따라 니켈 폐라이트 상의 결정성 및 생성비율이 현저히 증가하고 있었다.

• 한국전기전자재료학회논문지
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• 제28권9호
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• pp.607-614
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• 2015

To provide the clear images from the direct light on electrical board and display devices, anti glare treatment of display cover glass is needed. In this study, the effects of surface treatment temperature, concentration, and etching solution coating thickness of the gel phase on optical elements control such as gloss, haze of reflected light and transmittance, were investigated. Cover glasses were treated at different coating thickness and additive concentration. The optical properties were examined using spectrophotometer, gloss and haze meter. The surface morphology and roughness were measured by the optical microscope and Ra measuring instrument. The etching rate and surface morphologies were dramatically affected by the concentration of acid additive in the viscous gel because of re-crystallization of components in the etching solution, hydrogel formation and coagulant after coating on glass substrate. In our experimental range, cover glass which is surface-treated with various optical properties as well as the morphology uniformity was obtained; in particular, optical properties could be controlled by etching solution coating thickness of the gel phase and the concentration of additive. The gloss was depended on the surface roughness and it showed the linear relationship between optical transmittance and haze of reflected light, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.683-685
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• 2003

We report on a surface planarization process that produces more planar surface than previous sequential lateral solidification crystallized poly silicon films. By applying the single shot laser irradiation with optimum energy density ($(817mJ/cm^{2})$ on the ridge area after SLS crystallization, the ridge height can be decreased.

• 전자공학회논문지A
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• 제33A권6호
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• pp.172-177
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• 1996

We have characterized XeCl excimer-laser-induced crystallization of thin amorphous silicon films deposited by PECVD (${\alpha}$-Si:H) and LPCVD (${\alpha}$-Si). The electrical properties, surface roughness and crystallinity of crystallized thin films have been measured. The dc conductivities, crystallinity andsurface roughness of the films increased as the laser energy density and shot density were increased. The properties of laser annealed films deposited by LPCVD were better than those of thin films deposite by PECVD. We have also found that the multiple shots with relative low energy density were more benifical to the improsvement of surface roughness than the single shot with high energy density preserving the crystallinity.

• 한국표면공학회지
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• 제29권6호
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• pp.621-627
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• 1996

$SrBi_{2x}TaO_9$ ferroelectric thin films were prepared on platinized silicon substrates using MOD proces, and crystallization behavior of the films was investigated with variation of the annealing temperature and Bi content x. Crystalline phase of bismuth layered perovskite structure was formed even by baking the films at $800^{\circ}C$ for 5 minutes in air, and was not changed by annealing at temperatures raning from $700^{\circ}C$ to $900^{\circ}C$ for 1 hour in oxygen ambient. When $SrBi_{2x}TaO_9$ thin films ($0.8\lex\ie1.6$) were annealed at $800^{\circ}C$, Preferred orientation of the films along c-axis was observed with $x\ge1.2$. With increasing Bi content x, surface morphology of the films was changed from equiaxed grains to elongated grains.

• 한국표면공학회지
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• 제31권4호
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• pp.199-208
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• 1998

자벽고착 개념에 기초를 둔 새로운 조화센서는 다음과 같이 설명되어진다. 2단계 열처리된 Co계 비전질 percursor은 특이한 signal을 유발시키는데 이는 자속의 단계적인 변화를 나타내는 hystresisloop에 기인한다. 자장하에서의 1단계 열처리는 M-H loop에서 일축유도 자기이방성을 발생시킨다. 2단계 무자장하의 열처리는 고착된 자벽의 stepped hystresis의 특성을 나타내는데 이로인해 유용한 marker로서의 특징을 가지게 된다. 열처리동안 비정질재료의 표면과 내부에서 상당량의 산화와 결정화 과정을 거치는 것이 관찰되었다. 이오인한 표면 자벽 고착 모델의 제안은 자벽의 고착이 비정질부분과 semi-hard Co 층간의 접합면에서 가장 효과적으로 얻어지다는 것으로써 확신되어진다. 또한 자벽 고착 자장과 결정화된 Co층의 두께간의 상당한 연관성도 관찰되었다.