• Journal of Energy Engineering
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• v.26 no.2
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• pp.73-79
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• 2017

In nucleation assisted crystallization process formed $CO_2$ leaves as colloid gas and is used as the template by the rapidly growing crystals in the nucleation site. This emulsion of $CaCO_3$ micro-crystals & $CO_2$ micro-bubbles forms hollow particles. Formed hollow particles are double walled, both internal and external faces belonging to the cleavage aragonites which separate the surrounding water from the enclosed gas cavity. Hence, the reverse reaction of $CO_2$ with water forming Carbonic Acid is not possible and the pH stability is maintained. In fact every excess $CaCO_3$ crystals are buffering any carbonic acid left over. This $CO_2$ based nucleation technology prevents scale formation in water channels, but it also helps to reduce the previously formed scales. This process takes out water dissolved $CO_2$ in almost-visible micro-bubbles forms that helps reducing previously formed scale over a period of time (depends on the usage period). The aragonite crystals can't form scale because of its stable molecular structure and neutral surface electro potentiality.

• Journal of Powder Materials
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• v.12 no.6 s.53
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• pp.433-440
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• 2005

The hydrogen sorption speed of $Zr_{57}V_{36}Fe_7$ nanocrystalline and amorphous alloys was evaluated at room temperature. Nanocrystalline alloys of $Zr_{57}V_{36}Fe_7$ were prepared by planetary ball milling. The hydrogen sorption speed of nanocrystalline alloys was higher than that of the amorphous alloy. The enhanced sorption speed of nanocrystalline alloys was explained in terms of surface oxygen stability which has been known to retard the activation of amorphous alloys. The retardation can be reduced by formation of nanocrystals, which results in the observed increase in sorption properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• Particle and aerosol research
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• v.11 no.4
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• pp.107-113
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• 2015

SBA-16 (Santa Barbara Amorphous) was synthesized over supported $TiCl_4/MgCl_2$. Due to its high surface area and excellent morphological performance, it was expected to form the bi-supported catalytic system and be used for ethylene polymerization. Polymerization of ethylene was carried out at atmospheric pressure using hexane as solvent and triethylaluminium as cocatalyst. ICP, FTIR, DSC, TG-DTA were used to characterize polyethylene and catalyst product. Optimum conditions for ethylene polymerization were found to be 100 mL hexane, Al/Ti molar ratio of 160 and 1 h polymerization at $60^{\circ}C$. The activity of 396.76 kg PE/mol Ti.h.atm was achieved. Melting point of the obtained polymer was in the range of $132-135^{\circ}C$ and the highest degree of crystallization was 46%.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1337-1345
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• 1994

Glasses in the system of 45CaO-25TiO2-30P2O5 containing 1 mole% of M2O(M=Li, Na, K) were melted and crystallized. And their crystal phases were Ca3(PO4)2, CaTi4(PO4)6, and TiO2. Porous glass-ceramics with skeleton of two crystal phase CaTi4(PO4)6 and TiO2 were prepared by selective leaching of Ca3(PO4)2 with 0.1 N-HCl. Glass transition temperature(Tg) and crystallization temperature(Tc) were decreased by addition of 1 mole% alkali metal oxide. Pore size of porous glass-ceramics was increased with increasing heat treatment temperature and its dependence on heat treatment temperature was decreased with addition of Na2O and K2O. It was found that porous glass-ceramics of parent glass and containing 1mole% M2O(M=Li, Na, K) composition had maximum specific surface area, porosity and maximum of crystallzed phase by heat treatment at 80$0^{\circ}C$, 76$0^{\circ}C$, 78$0^{\circ}C$, 80$0^{\circ}C$ respectively.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.351-360
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• 1999

A large NaX type zeolite crystal of a uniform particle size of 20${\mu}{\textrm}{m}$ are grown with various H2O content by hydrothermal reaction and added seed crystal (2~3 ${\mu}{\textrm}{m}$) to reactant solution as a function of different adding seed levels from 3 to 15 %. The result that increased purity of NaX zeolite above 95% and homogeneity of crystal size by increasing adding seed levels, also decreased crystallization time. It was explained that adding seed to synthesis solution leaded out increase of surface area of physical contact reaction and directed growth of seed crystal, so more rapid consumption of reaction gel as increase seeding levels.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.2
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• pp.76-80
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• 2008

In this study, we synthesized ATO films using RF magnetron sputtering method consisted of $SnO_2$ target added Sb of 6 wt% and investigated the effect of $O_2$ on structural, electrical, and optical properties of ATO films. As a result, in case of $O_2$/Ar ratio of 0.11, we obtained ATO films exhibit the properties such as the resistivity about $8{\times}10^{-3}[{\Omega}-cm]$, the transmittance of 85.17%, and retile structure.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.74-77
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• 2000

Ta-doped PZT thin films prepared by reactive co-sputtering method could be transformed into single grained perovskite structure utilizing physical etching of Pt bottom electrode. It is found that PZT perovskite phase on damaged (111) Pt electrode by IMD was more easily crystallized than random oriented Pt electrode and less crystallized than (111) Pt electrode. This shows that amorphized Pt electrode surface by IMD process has an effect on crystallization of PZT perovskite phase. 40$\mu\textrm{m}\times40\mu\textrm{m}$ square shape single grain PZT array could be obtained utilizing the difference of incubation time for nucleation of rosettes between ion damaged Pt and (111) oriented Pt electrode. Single grained PZT thin films show low leakage current density of $1\times10^{-7}$ A/$\textrm{cm}^2$ and high break down field of 440kV/cm. The loss of remanent polarization after $10^{11}$ cycles was less than 15% of initial value.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1333-1336
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• 1998

Hydrogenated amorphous silicon(a-Si:H) films which were deposited by plasma enhanced chemical deposition(PECVD) have been recrystallized by the two-step rapid thermal annealing(RTA) employing the halogen lamp. The a-Si:H films evolve hydrogen explosively during the high temperature crystallzation step. In result, the recrystallized polycrystalline silicon(poly-Si) films have poor surface morphology. In order to avoid the hydrogen evolution, the films have undergone the dehydrogenation step prior to the crystallization step Before the RTA process, the active area of thin film transistors (TFT's) was patterned. The prepatterning of the a-Si:H active islands may reduce thermal damage to the glass substrate during the recrystallization. The computer generated simulation shows the heat propagation from the a-Si:H islands into the glass substrate. We have fabricated the poly-Si TFT's on the silicon wafers. The maximun ON/OFF current ratio of the device was over $10^5$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.701-706
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• 2013

We have focused on the conversion efficiency of CIGS thin film solar cell prepared by co-evaporation method as well as the optimization of process condition. The total thickness of back electrode was fixed at 1 ${\mu}m$ and the structural, electric and optical properties of CIGS thin film were investigated by varying the thickness of Mo:Na bottom layer from 0 to 500 nm. From the experimental results, the content of Na was appeared as 0.28 atomic percent when the thickness of Mo:Na layer was 300 nm with compactly densified plate-shape surface morphology. From the XRD measurements, (112) plane was the strongest preferential orientation together with secondary (220) and (204) planes affecting to the crystallization. The lowest roughness and resistivity were 2.67 nm and 3.9 ${\Omega}{\cdot}cm$, respectively. In addition, very high carrier density and hole mobility were recorded. From the optimization of Mo:Na layer, we have achieved the conversion efficiency of 9.59 percent.