• Journal of the Korean Ceramic Society
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• v.26 no.1
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• pp.13-20
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• 1989

After sintering Si3N4 containing 20wt% of variable composition ratio of Y2O3 and Al2O3 at 1$600^{\circ}C$, the specimens were annealed at 125$0^{\circ}C$ and 135$0^{\circ}C$ for 5, 10, 15 hours in order to crystallize the remanining oxynitride glass phases. The main grain-boundary crystalline phases in the Si3N4-Y2O3-Al2O3 system were melilite and YAG. By annealing 15hrs. at 125$0^{\circ}C$, almost all of the glasses were crystallized. During the growth of melilite, lattice volyume of $\beta$-Si3N4 was increased as Al3+ and O2- ions in the oxynitride glass diffuse into $\beta$-Si3N4 lattice, but during the growth of YAG, lattice volume of $\beta$-Si3N4 was decreased by reverse diffusion of Al3+ and O2- ions. In case of crystallization of glass phase to melilite, thermal expansion of sample was decreased, but in case of crystallization to YAG, inverse phenomen on was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.397-402
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• 2010

In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.101-105
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• 1995

Electrical discharge machinable $Si_3N_4$ was fabricated with the addtion of 20-60 vol% TiN by gas pressure sintering. Their sinterability, microstructure, mechanical and electrical properties were characterized as a function of the TiN content. The addition of TiN up to 20 vol% increased the flexural strength and fracture toughness as compared with those of the monolithic Si3N4. For the TiN content higher than 40 vol%, the electrical resistivity was lower than $1062\Omega$.cm. The $Si_3N_4$ with the addition of 40 vol% of TiN appears to have the optimum considerable sinterability, mechanical and electrical properties, and machinability. A microstructural analysis showed that the enhanced toughening was due to the crack deflection.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• Journal of the Korean Ceramic Society
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• v.29 no.11
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• pp.837-842
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• 1992

SiC and Si mixtures dispersed by 0.5~10.0 wt% of Al2O3 and reinforced by SiC whisker were sintered to Si3N4 bonded SiC bodies at 140$0^{\circ}C$ in a N2 gas atmosphere, and the nitridation and mechanical properties of sintered bodies were investigated. From these observation, it is concluded that relative density and bending strength increased with the rising of nitridation and the highest nitridation ratio was obtained for a specimen having 1.5 wt% Al2O3. On the other hand, the amount of $\beta$-Si3N4 in the specimens containing Al2O3 more than 5.0 wt% was increased abruptly and the best in fracture toughness was sintered for a composits having 30 wt% SiC whiskers.

• Journal of the Korean Ceramic Society
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• v.41 no.12 s.271
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• pp.907-914
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• 2004

The nitridation mechanism of Si by SHS at $Si-NaCl-NH_{4}Cl-NaN_3$ system was investigated in this work. It was revealed that NaCl as a diluent was helpful to the perfect nitridation reaction by retarding the growth of Si particle resulted from the melting of Si at the initial stage of the nitridation reaction. And $NH_{4}Cl\;and\;NaN_3$ formed NaCl through decomposition and combination, and the preheating of pellet was helpful to the nitridation reaction in this process. The main nitridation mechanism of this system was liquid-gas reaction. The optimum porosity of the pellet for the nitridation of ${\alpha}-Si_{3}N_4$ was $67-69\%$.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1039-1043
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• 2000

$\alpha$-Si$_3$N$_4$가 20vol% 혼합된 SiC/Si$_3$N$_4$혼합물에서 $\alpha$-SiC의 일부를 SiC whisker로 치환하여 첨가한 후 180$0^{\circ}C$, 25MPa의 압력으로 hot pressing하여 SiC/Si$_3$N$_4$/SiCw 복합체를 제조하였다. SiC whisker의 첨가 함량이 증가할수록 상대밀도, 꺽임강도, 마모 저항성은 감소되었으나, 파괴인성은 크게 향상되었다. $\alpha$-SiC의 일부를 SiC whisker로의 치환은 치밀화를 억제하였으나 파괴인성의 증가는 마모 저항성을 향상시키지 않았다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.20-28
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• 1992

Dielectric thin film of N/O ($Si_{3]N_{4}/SiO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(dry & pyrogenic oxidation methods) of the top 7nm $Si_{3]N_{4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high resolution TEM, AES and SIMS. The insulating characteristics(I-V characteristics) were investigated by HP 4145, and the characteristics of TDDB (Time Dependent Dielectric Breakdown) were evaluated by using CCST(Current Constant Stress Time) method. In this experiment, The optimum oxidation condition for preparation of good insulating and TDDB characteristics of N/O film was pyrogenic oxidation at 85$0^{\circ}C$ for 30 minutes. The leakage current was reduced from 400pA to 7.5pA when SiO$_{2}$ film with thickness of 2nm was formed on the top of $Si_{3]N_{4}$ film by the pyrogenic oxidation method.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.364-368
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• 2000

SiC fiber reinforced $Si_3N_4$ matrix composites combined with electrical conductive phases of carbon fiber and WC powder fabricated by hot pressing at 1773K. The ability to predict fracture in the ceramic matrix composites was evaluated by measuring simultaneous load-deflection and electrical resistanc difference-deflection curves in four point bending tests. The changes in electrical resistance differences closely corresponded to the fracture behavior of the composites. Different electrical conductive phases are suited to predicting different stages and rates of fracture. These obsevations how that it is possible to perform "in situ" fracture detection in ceramic composites.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.189-193
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• 2007

Effect of additive composition on fracture toughness of in situ-toughened $SiC-Si_3N_4$ composites was investigated for five different additive compositions. The highest toughness $(6.4MPa{\cdot}m^{1/2})\;in\;SiC-Si_3N_4$ composites investigated herein was obtained when an Y-Mg-Si-Al-O-N oxynitride glass was used as a sintering additive. The improvement in fracture toughness was produced by enhanced bridging and deflection by $Si_3N_4$ grains.