• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.6 s.177
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• pp.1584-1592
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• 2000

Reversed plane bending fatigue tests were conducted on SiC whisker reinforced aluminum composite which were consolidated by squeeze casting process. Initiation and growth of small surface fatigue c racks were investigated by means of a plastic replica technique. The fatigue crack initiated in the vicinity of SiC whisker/matrix interface. It was found that a fatigue crack deflected along SiC whisker and grew in a zig-zag manner microscopically, although the crack propagated along the direction normal to the loading axis macroscopically. The coalescence of micro-cracks was observed in the tests conducted at high stress levels, but were not evident in tests in which lower levels of stress were applied. Due to the coalescence, a higher crack growth rate of small cracks rather than those of long cracks was recognized in da/dn -ΔK realtionship.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.234-241
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• 2003

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.363-363
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• 2010

The high capillarity of a plastic fiber network having superhydrophilic Si-DLC coating is studied. Although the superhydrophilic surface maximize wetting ability on the flat surface, there remains a requirement for the more wettable surface for various applications such as air-filters or liquid-filters. In this research, the PET non-woven fabric surface was realized by superhydrophilic coating. PTE non-woven fabric network was chosen due to its micro-pore structure, cheap price, and productivity. Superhydrophobic fiber network was prepared with a coating of oxgyen plasma treated Si-DLC films using plasma-enhanced chemical vapor deposition (PECVD). We first fabricated superhydrophilic fabric structure by using a polyethylene terephthalate (PET) non-woven fabric (NWF) coated with a nanostructured films of the Si-incorporated diamond-like carbon (Si-DLC) followed by the plasma dry etching with oxygen. The Si-DLC with oxygen plasma etching becomes a superhydrophilic and the Si-DLC coating have several advantages of easy coating procedure at room temperature, strong mechanical performance, and long-lasting property in superhydrophilicity. It was found that the superhydrophobic fiber network shows better wicking ability through micro-pores and enables water to have much faster spreading speed than merely superhydrophilic surface. Here, capillarity on superhydrophilic fabric structure is investigated from the spreading pattern of water flowing on the vertical surface in a gravitational field. As water flows on vertical flat solid surface always fall down in gravitational direction (i.e. gravity dominant flow), while water flows on vertical superhydrophilic fabric surface showed the capillary dominant spreading.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.103-105
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• 2015

Effect of silicon doping into ZnSnO systems was investigated using solution process. Addition of silicon was used to suppress oxygen vacancy generation. The transfer characteristics of the device showed threshold voltage shift toward the positive direction with increasing Si content due to the high binding energy of silicon atoms with oxygen. As a result, the carrier concentration was decreased with increasing Si content.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.1-7
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• 1997

The goals of the present study lie in presenting the direction of researches and developments for GaAs based solar cells, as well as in taking a step toward the establishment of GaAs MOCVD technologies. On the other hand, the GaAs on Si substrates has been recognized as a lightweight alternative to pure GaAs substrate for space application, because its density is less than the 7alf of GaAs or Ge. So, GaAs/Si has twofold weight advantage to GaAs monolithic cell. It was concluded that the development the development of MOCVD technologies should be ahead of GaAs solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.459-459
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• 2011

Graphene has many fascinating material properties such as high electron mobility, high optical transparency, excellent thermal conductivity, superior Young's modulus, etc. Several studies have recently found that single-layer graphene is chemically more reactive than few-layer graphene when supported on silicon dioxide substrates with sub-nm roughness. In this study, we have investigated the influence of substrates on chemical reactivity of graphene. Morphology and thermal oxidation behavior of graphene on atomically flat mica substrates were studied by atomic force microscopy (AFM) and Raman spectroscopy compared to graphene on SiO2/Si substrates. Notably, oxidation of single-layer graphene proceeds more slowly on mica than SiO2/Si. Detailed analysis led to a conclusion that deformation along the out-of-plane direction enhances reactivity of graphene.

• Journal of the Korean Ceramic Society
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• v.33 no.9
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• pp.985-994
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• 1996

The initiation and growth of $\alpha$-Al2O3/metal composites by the directed oxidation of molten commercial AlZnMg-alloy at 1223-1423K were investigated. Spontaneous bulk growth did not occur on the alloy alone. but the uniform initiation and growth of the composite were obtained by putting a thin layer of SiO2 particles on the surface of the alloy. Without SiO2 the external surface of the oxide layer was convered by MgO and MgAl2O4. But with the SiO2 reaction initiate the porous ZnO layers were found on the growth surface. The higher process temperature yielded a lower metal content. The oxidation product of $\alpha$-Al2O3 was found to be oriented with c-axis parallel to th growth direction. The growth rates increased with temperature and the apparent activation energy was 111.8 kJ/mol.

• Korean Journal of Crystallography
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• v.3 no.2
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• pp.98-110
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• 1992

B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

• Journal of Korea Foundry Society
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• v.29 no.5
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• pp.225-232
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• 2009

For comprehensive understanding of the formation behavior of $\beta-Al_5FeSi$ phase in Al-Si-Cu alloys with the existence of Fe element, microstructure characterizations were performed using combined analysis of OM, SEM-EDS, XRD. Especially, experimental and predictive works on solidification events of $\beta-Al_5FeSi$ phase as well as other phases formed together with $\beta-Al_5FeSi$ have been carried out by using DSC analysis and Java-based Materials Properties software (J. Mat. Pro.). Primary and eutectic $\beta-Al_5FeSi$ phases were able to distinguish from each other on microstructures by their morphological features. Primary $\beta-Al_5FeSi$ phase was seen to have rough surface perpendicular to growth direction, indicating free attachment of solute atoms in liquid state. On the other hand, the eutectic $\beta-Al_5FeSi$ phase was formed with plain and straight surface during eutectic reaction together with $\alpha$-Al phase. The eutectic reaction of $\beta-Al_5FeSi$ and $\alpha$-Al phases was seen to be able to separate into each formation depending on cooling rate.