• 제목/요약/키워드: SI direction

검색결과 600건 처리시간 0.026초

Design of Two-axis Force Sensor for Robot's Finger

  • Kim, Gob-Soon
    • Transactions on Control, Automation and Systems Engineering
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    • 제3권1호
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    • pp.66-70
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    • 2001
  • This paper describes the design of a two-axis force sensor for robots finger. In detects the x-direction force Fx and y-direction force Fy simultaneously. In order to safely grasp an unknown object using the robots fingers, they should detect the force or gripping direction and the force of gravity direction, and perform the force control using the forces detected. Therefore, the robots hand should be made by the robots finger with tow-axis force sensor that can detect the x-direction force and y-direction force si-multaneously. Thus, in this paper, the two-axis force sensor for robots finger is designed using several parallel-plate beams. The equations to calculate the strain of the beams according to the force in order to design the sensing element of the force sensor are derived and these equations are used to design the aize of two-axis force sensor sensing element. The reliability of the derive equa-tions is verified buy performing a finite element analysis of the sensing element. The strain obtained through this process is compared to that obtained through the theory analysis and a characteristics test of the fabricated sensor. It reveals that the rated strains calculated from the derive equations make a good agreement with the results from the Finite Element Method analysis and from the character-istic test.

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부분공정 태양전지를 이용한 결정질 태양전지의 강도 특성에 관한 연구 (Determination of the Strength Characteristics of c-Si Solar Cells using Partially Processed Solar Cells)

  • 최수열;임종록
    • 한국태양에너지학회 논문집
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    • 제40권5호
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    • pp.35-45
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    • 2020
  • Photovoltaic (PV) power system prices have been steadily dropping in recent years due to their mass production and advances in relevant technology. Crystalline silicon (c-Si wafers) account for the largest share of the price of solar cells; reducing the thickness of these wafers is an essential part of increasing the price competitiveness of PV power systems. However, reducing the thickness of c-Si wafers is challenging; typically, phenomena such as bowing and cracking are encountered. While several approaches to address the bowing phenomenon of the c-Si solar cells exist, the only method to study the crack phenomenon (related to the strength of the c-Si solar cells) is the bending test method. Moreover, studies on determining the strength properties of the solar cells have focused largely on c-Si wafers, while those on the strength properties of front and rear-side electrodes and SiNx, the other components of c-Si solar cells, are scarce. In this study, we analyzed the strength characteristics of each layer of c-Si solar cells. The strength characteristics of the sawing mark direction produced during the production of c-Si wafers were also tested. Experiments were conducted using a 4bending tester for a specially manufactured c-Si solar cell. The results indicate that the back side electrode is the main component that experienced bowing, while the front electrode was the primary component regulating the strength of the c-Si solar cell.

Si$_3$N$_4$ Whisker의 첨가량과 배열방향이 Si$_3$N$_4$ 복합 소결체의 기계적 특성에 미치는 영향 (Effect of the Whisker Amount and Orientation on Mechanical Properties of the Si$_3$N$_4$ based Composites)

  • 김창원;박동수;박찬
    • 한국세라믹학회지
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    • 제36권1호
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    • pp.43-49
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    • 1999
  • 0~5 wt%의 $\beta$-Si3N4 whisker를 첨가한 질화규소 가스압 소결체를 제작하였다. 첨가된 whisker들은 tape casting을 응용하여 tape 내에서 일방향으로 배열하였으며, 제작된 tape로부터 절취된 sheet들의 적층 과정을 변화하여 다양한 미세구조를 갖는 성형체를 제작하였다. 가스압 소결을 통하여 치밀화된 소결체의 조대결정립은 성형체의 whisker와 같은 방향성을 가졌으며, 소결수축률과 기계적 특성 등도 이러한 다양한 미세구조상의 특징과 일관된 결과를 나타내었다. Whisker를 일방향으로 배열하였을 경우, 소결수축률은 whisker 배열 방향과 평행한 방향보다 수직한 방향으로 크게 일어났을 때, whisker 함량이 증가함에 따라 수축률의 차이가 증가하였다. Indentationi crack length는 whisker 함량이 증가함에 따라 whisker 배열 방향과 수직한 방향의 균열 길이는 더 짧아졌고, 그와 평행한 방향의 균열 길이는 길어졌다. Whisker 첨가에 의해 결정립이 더 크게 성장하였으나 강도는 whisker를 첨가하지 않을을때보다 낮지 않았다. Whisker 배열 방향을 90$^{\circ}$ 및 45$^{\circ}$ 간격으로 엇갈리게 적층하였을 경우에는 특성의 이방성이 나타나지 않았다.

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Direction of Tissue Contraction after Microwave Ablation: A Comparative Experimental Study in Ex Vivo Bovine Liver

  • Junhyok Lee;Hyunchul Rhim;Min Woo Lee;Tae Wook Kang;Kyoung Doo Song;Jeong Kyong Lee
    • Korean Journal of Radiology
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    • 제23권1호
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    • pp.42-51
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    • 2022
  • Objective: This study aimed to investigate the direction of tissue contraction after microwave ablation in ex vivo bovine liver models. Materials and Methods: Ablation procedures were conducted in a total of 90 sites in ex vivo bovine liver models, including the surface (n = 60) and parenchyma (n = 30), to examine the direction of contraction of the tissue in the peripheral and central regions from the microwave antenna. Three commercially available 2.45-GHz microwave systems (Emprint, Neuwave, and Surblate) were used. For surface ablation, the lengths of two overlapped square markers were measured after 2.5- and 5-minutes ablations (n = 10 ablations for each system for each ablation time). For parenchyma ablation, seven predetermined distances between the markers were measured on the cutting plane after 5- and 10-minutes ablations (n = 5 ablations for each system for each ablation time). The contraction in the radial and longitudinal directions and the sphericity index (SI) of the ablation zones were compared between the three systems using analysis of variance. Results: In the surface ablation experiment, the mean longitudinal contraction ratio and SI from a 5-minutes ablation using the Emprint, Neuwave, and Surblate systems were 28.92% and 1.04, 20.10% and 0.53, and 24.90% and 0.45, respectively (p < 0.001). A positive correlation between longitudinal contraction and SI was noted, and a similar radial contraction was observed. In the parenchyma ablation experiment, the mean longitudinal contraction ratio and SI from a 10-minutes ablation using the three pieces of equipment were 38.60% and 1.06, 32.45% and 0.61, and 28.50% and 0.50, respectively (p < 0.001). There was a significant difference in the longitudinal contraction properties, whereas there was no significant difference in the radial contraction properties. Conclusion: The degree of longitudinal contraction showed significant differences depending on the microwave ablation equipment, which may affect the SI of the ablation zone.

Numerical Study of Polarization-Dependent Emission Properties of Localized-Surface-Plasmon-Coupled Light Emitting Diodes with Ag/SiO2 Na

  • Moon, Seul-Ki;Yang, Jin-Kyu
    • Journal of the Optical Society of Korea
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    • 제18권5호
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    • pp.582-588
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    • 2014
  • We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

6H - SiC bulk 단결정 성장 양상과 micropipe에 관한 연구 (A study on micropipes and the growth morphology in 6H- SiC bulk crystal)

  • 강승민;오근호
    • 한국결정성장학회지
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    • 제5권1호
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    • pp.44-49
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    • 1995
  • 6H - SiC를 승화법(Sublimation Process)으로 성장하였으며, 성장 결정의 표면에서 나타난 양상에 대하여 광학 현미경을 이용하여 관찰하였다. 6H-SiC는 측면방향(Hexagonal system에서 a축 방향)으로 성장하는 속도가 seed 방향인 c축 방향보다 빠르고, 따라서 많은 성장 step을 관찰할 수 있었다. 또한, SiC 결정의 주된 결함인 micropipe는 성장 후 결정의 표면까지도 형성되고 있어, 거대한 void로 관찰되어졌다. 이것은 pore와는 다르게 구별되며, 완전한 구형의 단면을 가진다. 본 연구에서는 micropipe 및 면결함, 그리고 결정성장시의 step 형성등의 현상에 대하여 광학 현미경으로 조사형 그 결과를 보고하기로 한다.

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C/SiC 재료의 물성 측정을 위한 준 해석적 방법 (Quasi-Analytical Method of C/SiC Material Properties Characterization)

  • 김영국
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2010년도 제34회 춘계학술대회논문집
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    • pp.437-440
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    • 2010
  • 이 논문은 발사체 노즐에 사용되는 내열성 재료인 C/SiC에 대한 이방성 물성을 예측하는 방법으로, 평면 방향의 실험 데이터를 이용해서 9개의 엔지니어링 물성을 간단하고 효과적으로 계산하는 준 이론적 접근에 대해 설명하였다. 이 방법은 C/SiC 복합재료를 직조 보강재의 굴곡율에 따라 세 층으로 이상화 하여, 고전 적층 평판이론으로 계산한다. 평면 방향으로 실행된 실험 데이터와 직조 구조물의 굴곡율을 초기 데이터로 이용하며, 측정이 어려운 두께 방향의 물성을 효과적으로 얻을 수 있었다. 예제를 통하여 이 방법의 유용성을 증명하였다.

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Research on residual stress in SiCf reinforced titanium matrix composites

  • Qu, Haitao;Hou, Hongliang;Zhao, Bing;Lin, Song
    • Steel and Composite Structures
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    • 제17권2호
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    • pp.173-184
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    • 2014
  • This study aimed to theoretical calculate the thermal residual stress in continuous SiC fiber reinforced titanium matrix composites. The analytical solution of residual stress field distribution was obtained by using coaxial cylinder model, and the numerical solution was obtained by using finite element model (FEM). Both of the above models were compared and the thermal residual stress was analyzed in the axial, hoop, radial direction. The results indicated that both the two models were feasible to theoretical calculate the thermal residual stress in continuous SiC fiber reinforced titanium matrix composites, because the deviations between the theoretical calculation results and the test results were less than 8%. In the titanium matrix composites, along with the increment of the SiC fiber volume fraction, the longitudinal property was improved, while the equivalent residual stress was not significantly changed, keeping the intensity around 600 MPa. There was a pronounced reduction of the radial residual stress in the titanium matrix composites when there was carbon coating on the surface of the SiC fiber, because carbon coating could effectively reduce the coefficient of thermal expansion mismatch between the fiber and the titanium matrix, meanwhile, the consumption of carbon coating could protect SiC fibers effectively, so as to ensure the high-performance of the composites. The support of design and optimization of composites was provided though theoretical calculation and analysis of residual stress.

Epitaxial $CoSi_2$접촉 p+/n 접합의 I-V 특성 (I-V Characteristics of Epitaxial $CoSi_2$-contacted p+/n Junctions)

  • 구본철;김시중;김주연;배규식
    • 한국전기전자재료학회논문지
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    • 제13권11호
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    • pp.908-913
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    • 2000
  • CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

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실리콘 이방성 식각을 통한 LCD 프리즘 시트 제작 연구 (A Study on Manufacturing of LCD Prism Sheets Through Silicon Anisotropic Etching)

  • 전광석;류근걸
    • 대한금속재료학회지
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    • 제46권6호
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    • pp.377-381
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    • 2008
  • Prism sheet of LCD BLU which depends on supply from Japan and U.S.A was studied by using Si anisotropic etching and injection molding technologies. First, the prism sheet was patterned on Si wafer through photolithography, and the best conditions of Si etching were determined through etching Si wafer with TMAH to obtain straight optimized zigzag patterns, and a cross pattern to provide light diffusion and concurrent focusing. The etch rate of TMAH was concluded to be constant for $25wt%-70^{\circ}C$ condition. Ni stamp of prism sheet was made by electrodeposition using patterned Si wafer, normal or fast H/C(Heating/Cooling) injections were carried out to fabricate prism sheet. It was known that fast H/C injection could fabricate prism sheet more accurately than normal injection. Zigzag patterns and the cross pattern showed higher transmissivity than the straight patterns because of light diffusion through diagonal direction. The fast H/C injection for zigzag patterns showed lower transmissivity than normal injection because there occurred more light diffusion through precise injection patterns, but the fast H/C injection for straight patterns showed only refraction without diffusion, causing lower transmissivity than normal injection.