• Title/Summary/Keyword: SI direction

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Design of Two-axis Force Sensor for Robot's Finger

  • Kim, Gob-Soon
    • Transactions on Control, Automation and Systems Engineering
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    • v.3 no.1
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    • pp.66-70
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    • 2001
  • This paper describes the design of a two-axis force sensor for robots finger. In detects the x-direction force Fx and y-direction force Fy simultaneously. In order to safely grasp an unknown object using the robots fingers, they should detect the force or gripping direction and the force of gravity direction, and perform the force control using the forces detected. Therefore, the robots hand should be made by the robots finger with tow-axis force sensor that can detect the x-direction force and y-direction force si-multaneously. Thus, in this paper, the two-axis force sensor for robots finger is designed using several parallel-plate beams. The equations to calculate the strain of the beams according to the force in order to design the sensing element of the force sensor are derived and these equations are used to design the aize of two-axis force sensor sensing element. The reliability of the derive equa-tions is verified buy performing a finite element analysis of the sensing element. The strain obtained through this process is compared to that obtained through the theory analysis and a characteristics test of the fabricated sensor. It reveals that the rated strains calculated from the derive equations make a good agreement with the results from the Finite Element Method analysis and from the character-istic test.

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Determination of the Strength Characteristics of c-Si Solar Cells using Partially Processed Solar Cells (부분공정 태양전지를 이용한 결정질 태양전지의 강도 특성에 관한 연구)

  • Choi, Su Yeol;Lim, Jong Rok
    • Journal of the Korean Solar Energy Society
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    • v.40 no.5
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    • pp.35-45
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    • 2020
  • Photovoltaic (PV) power system prices have been steadily dropping in recent years due to their mass production and advances in relevant technology. Crystalline silicon (c-Si wafers) account for the largest share of the price of solar cells; reducing the thickness of these wafers is an essential part of increasing the price competitiveness of PV power systems. However, reducing the thickness of c-Si wafers is challenging; typically, phenomena such as bowing and cracking are encountered. While several approaches to address the bowing phenomenon of the c-Si solar cells exist, the only method to study the crack phenomenon (related to the strength of the c-Si solar cells) is the bending test method. Moreover, studies on determining the strength properties of the solar cells have focused largely on c-Si wafers, while those on the strength properties of front and rear-side electrodes and SiNx, the other components of c-Si solar cells, are scarce. In this study, we analyzed the strength characteristics of each layer of c-Si solar cells. The strength characteristics of the sawing mark direction produced during the production of c-Si wafers were also tested. Experiments were conducted using a 4bending tester for a specially manufactured c-Si solar cell. The results indicate that the back side electrode is the main component that experienced bowing, while the front electrode was the primary component regulating the strength of the c-Si solar cell.

Effect of the Whisker Amount and Orientation on Mechanical Properties of the Si$_3$N$_4$ based Composites (Si$_3$N$_4$ Whisker의 첨가량과 배열방향이 Si$_3$N$_4$ 복합 소결체의 기계적 특성에 미치는 영향)

  • Kim, Chang-Won;Park, Dong-Soo;Park, Chan
    • Journal of the Korean Ceramic Society
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    • v.36 no.1
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    • pp.43-49
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    • 1999
  • Gas pressure sintered silicon nitride based composites with 0~5wt% $\beta$-Si3N4 whiskers were prepared. The whiskers were unidirectionally oriented by a modified tape casting technqiue and green bodies with various microstructure were formed by changing stacking sequences of sheets cut from the tape. Orientations of the large elongated grains of the sample after gas pressure sintering were the same as the those of the whiskers of green body, and the sintering shrinkage and mechanical properties of sintered sample were consistent with the microstructural characteristics. In case of unidirectional samples, the sintering shrinkage normal to whisker alignment direction was larger than that parallel to the direction. The shrinkage difference inceaed as the whiskercontent increaed. As whisker content increaed, the crack length normal to and parallel to tape casting direction became shorter and larger, respectively. Although the grain size increased by th whisker addition, the flexural strength of unidirectional samples was not lower than that of smaple without the whisker. In case of crossplied and 45$^{\circ}$rotated samples, the anisotropy of mechanical preoperties disappeared.

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Direction of Tissue Contraction after Microwave Ablation: A Comparative Experimental Study in Ex Vivo Bovine Liver

  • Junhyok Lee;Hyunchul Rhim;Min Woo Lee;Tae Wook Kang;Kyoung Doo Song;Jeong Kyong Lee
    • Korean Journal of Radiology
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    • v.23 no.1
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    • pp.42-51
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    • 2022
  • Objective: This study aimed to investigate the direction of tissue contraction after microwave ablation in ex vivo bovine liver models. Materials and Methods: Ablation procedures were conducted in a total of 90 sites in ex vivo bovine liver models, including the surface (n = 60) and parenchyma (n = 30), to examine the direction of contraction of the tissue in the peripheral and central regions from the microwave antenna. Three commercially available 2.45-GHz microwave systems (Emprint, Neuwave, and Surblate) were used. For surface ablation, the lengths of two overlapped square markers were measured after 2.5- and 5-minutes ablations (n = 10 ablations for each system for each ablation time). For parenchyma ablation, seven predetermined distances between the markers were measured on the cutting plane after 5- and 10-minutes ablations (n = 5 ablations for each system for each ablation time). The contraction in the radial and longitudinal directions and the sphericity index (SI) of the ablation zones were compared between the three systems using analysis of variance. Results: In the surface ablation experiment, the mean longitudinal contraction ratio and SI from a 5-minutes ablation using the Emprint, Neuwave, and Surblate systems were 28.92% and 1.04, 20.10% and 0.53, and 24.90% and 0.45, respectively (p < 0.001). A positive correlation between longitudinal contraction and SI was noted, and a similar radial contraction was observed. In the parenchyma ablation experiment, the mean longitudinal contraction ratio and SI from a 10-minutes ablation using the three pieces of equipment were 38.60% and 1.06, 32.45% and 0.61, and 28.50% and 0.50, respectively (p < 0.001). There was a significant difference in the longitudinal contraction properties, whereas there was no significant difference in the radial contraction properties. Conclusion: The degree of longitudinal contraction showed significant differences depending on the microwave ablation equipment, which may affect the SI of the ablation zone.

Numerical Study of Polarization-Dependent Emission Properties of Localized-Surface-Plasmon-Coupled Light Emitting Diodes with Ag/SiO2 Na

  • Moon, Seul-Ki;Yang, Jin-Kyu
    • Journal of the Optical Society of Korea
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    • v.18 no.5
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    • pp.582-588
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    • 2014
  • We study polarization-dependent spontaneous emission (SE) rate and light extraction efficiency (LEE) in localized-surface-plasmon (LSP)-coupled light emitting diodes (LEDs). The closely packed seven $Ag/SiO_2$ core-shell (CS) nanoparticles (NPs) lie on top of the GaN surface for LSP coupling with a radiated dipole. According to the dipole direction, both the SE rate and the LEE are significantly modified by the LSP effect at the $Ag/SiO_2$ CS NPs when the size of Ag, the thickness of $SiO_2$, and the position of the dipole source are varied. The enhancement of the SE rate is related to an induced dipole effect at the Ag, and the high LEE is caused by light scattering with an LSP mode at $Ag/SiO_2$ CS NPs. We suggest the optimum position of the quantum well (QW) in blue InGaN/GaN LEDs with $Ag/SiO_2$ CS NPs for practical application.

A study on micropipes and the growth morphology in 6H- SiC bulk crystal (6H - SiC bulk 단결정 성장 양상과 micropipe에 관한 연구)

  • 강승민;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.5 no.1
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    • pp.44-49
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    • 1995
  • Abstract The surface of 6H - SiC bulk crystal grown by sublimation process was investigated by optical microscope observation. Since, in the 6H crystal growing, the crystal had the habitual step growth attitude such that the lateral growth rate along the random a - axis orientation was higher than that along the c - axis of the growth direction, then many steps were developed. There were, also, many micropipes on the surface in the form of as-like large voids. However, they were differenciated with pores and cross- sectional shape of them were close to the circle. In this study, many micropipes, planar defects and the growth steps appeared on the grown crystal surface were investigated.

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Quasi-Analytical Method of C/SiC Material Properties Characterization (C/SiC 재료의 물성 측정을 위한 준 해석적 방법)

  • Kim, Yeong-K.
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2010.05a
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    • pp.437-440
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    • 2010
  • This paper represents a simple and effective calculation method to predict the orthotropic engineering constants for C/SiC woven fabric composite. The method, a quasi-analytical method using the modified equivalent laminated model, idealizes the woven fabric structure as a symmetric three-ply laminate to utilize a classical laminated plate theory. The required initial parameters are in-plane modulus from experiments and crimp ratio of the woven fabric. This study shows its feasibility by demonstrating example to calculate the engineering constants to thickness direction needed for three dimensional thermo-mechanical stress calculations.

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Research on residual stress in SiCf reinforced titanium matrix composites

  • Qu, Haitao;Hou, Hongliang;Zhao, Bing;Lin, Song
    • Steel and Composite Structures
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    • v.17 no.2
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    • pp.173-184
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    • 2014
  • This study aimed to theoretical calculate the thermal residual stress in continuous SiC fiber reinforced titanium matrix composites. The analytical solution of residual stress field distribution was obtained by using coaxial cylinder model, and the numerical solution was obtained by using finite element model (FEM). Both of the above models were compared and the thermal residual stress was analyzed in the axial, hoop, radial direction. The results indicated that both the two models were feasible to theoretical calculate the thermal residual stress in continuous SiC fiber reinforced titanium matrix composites, because the deviations between the theoretical calculation results and the test results were less than 8%. In the titanium matrix composites, along with the increment of the SiC fiber volume fraction, the longitudinal property was improved, while the equivalent residual stress was not significantly changed, keeping the intensity around 600 MPa. There was a pronounced reduction of the radial residual stress in the titanium matrix composites when there was carbon coating on the surface of the SiC fiber, because carbon coating could effectively reduce the coefficient of thermal expansion mismatch between the fiber and the titanium matrix, meanwhile, the consumption of carbon coating could protect SiC fibers effectively, so as to ensure the high-performance of the composites. The support of design and optimization of composites was provided though theoretical calculation and analysis of residual stress.

I-V Characteristics of Epitaxial $CoSi_2$-contacted p+/n Junctions (Epitaxial $CoSi_2$접촉 p+/n 접합의 I-V 특성)

  • 구본철;김시중;김주연;배규식
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.11
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    • pp.908-913
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    • 2000
  • CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

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A Study on Manufacturing of LCD Prism Sheets Through Silicon Anisotropic Etching (실리콘 이방성 식각을 통한 LCD 프리즘 시트 제작 연구)

  • Jeon, Kwangseok;Ryoo, Kunkul
    • Korean Journal of Metals and Materials
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    • v.46 no.6
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    • pp.377-381
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    • 2008
  • Prism sheet of LCD BLU which depends on supply from Japan and U.S.A was studied by using Si anisotropic etching and injection molding technologies. First, the prism sheet was patterned on Si wafer through photolithography, and the best conditions of Si etching were determined through etching Si wafer with TMAH to obtain straight optimized zigzag patterns, and a cross pattern to provide light diffusion and concurrent focusing. The etch rate of TMAH was concluded to be constant for $25wt%-70^{\circ}C$ condition. Ni stamp of prism sheet was made by electrodeposition using patterned Si wafer, normal or fast H/C(Heating/Cooling) injections were carried out to fabricate prism sheet. It was known that fast H/C injection could fabricate prism sheet more accurately than normal injection. Zigzag patterns and the cross pattern showed higher transmissivity than the straight patterns because of light diffusion through diagonal direction. The fast H/C injection for zigzag patterns showed lower transmissivity than normal injection because there occurred more light diffusion through precise injection patterns, but the fast H/C injection for straight patterns showed only refraction without diffusion, causing lower transmissivity than normal injection.