• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.155.2-155.2
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• 2013

Strain-relaxed SiGe layer on Si substrate has numerous potential applications for electronic and opto- electronic devices. SiGe layer must have a high degree of strain relaxation and a low dislocation density. Conventionally, strain-relaxed SiGe on Si has been manufactured using compositionally graded buffers, in which very thick SiGe buffers of several micrometers are grown on a Si substrate with Ge composition increasing from the Si substrate to the surface. In this study, a new plasma process, i.e., the combination of PIII&D and HiPIMS, was adopted to implant Ge ions into Si wafer for direct formation of SiGe layer on Si substrate. Due to the high peak power density applied the Ge sputtering target during HiPIMS operation, a large fraction of sputtered Ge atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed Ge plasma, the ion implantation of Ge ions can be successfully accomplished. The PIII&D system for Ge ion implantation on Si (100) substrate was equipped with 3'-magnetron sputtering guns with Ge and Si target, which were operated with a HiPIMS pulsed-DC power supply. The sample stage with Si substrate was pulse-biased using a separate hard-tube pulser. During the implantation operation, HiPIMS pulse and substrate's negative bias pulse were synchronized at the same frequency of 50 Hz. The pulse voltage applied to the Ge sputtering target was -1200 V and the pulse width was 80 usec. While operating the Ge sputtering gun in HiPIMS mode, a pulse bias of -50 kV was applied to the Si substrate. The pulse width was 50 usec with a 30 usec delay time with respect to the HiPIMS pulse. Ge ion implantation process was performed for 30 min. to achieve approximately 20 % of Ge concentration in Si substrate. Right after Ge ion implantation, ~50 nm thick Si capping layer was deposited to prevent oxidation during subsequent RTA process at $1000^{\circ}C$ in N2 environment. The Ge-implanted Si samples were analyzed using Auger electron spectroscopy, High-resolution X-ray diffractometer, Raman spectroscopy, and Transmission electron microscopy to investigate the depth distribution, the degree of strain relaxation, and the crystalline structure, respectively. The analysis results showed that a strain-relaxed SiGe layer of ~100 nm thickness could be effectively formed on Si substrate by direct Ge ion implantation using the newly-developed PIII&D process for non-gaseous elements.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.105.1-105.1
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• 2011

To enhance the performance of photovoltaic a-Si:H solar cells with a hybrid-type light absorbing structure of single crystal silicon nanoparticles (Si NPs) in a-Si:H matrix, single crystal Si NPs were produced by laser pyrolysis. The Si NPs were synthesized by $SiH_4$ gas decomposition using a $CO_2$ laser. The properties of Si NPs were controlled by process parameters such as $CO_2$ laser power, reactive gas pressure, and $H_2/SiH_4$ gas flows. The crystalline properties and sizes of Si NPs were analyzed by High Resolution Transmission Electron Microscopy (HRTEM). The sizes of Si NPs were controllable in the range of 5-15 nm in diameter and the effects of process parameters of laser pyrolysis were systematically investigated.

• Composites Research
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• 제33권5호
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• pp.247-250
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• 2020

본 연구에서는 액상가압성형 공정을 이용하여 SiC 연속섬유가 강화된 마그네슘 복합재료의 제조 가능성을 검토하였다. 액상가압성형 공정을 이용하여 SiC 섬유가 균일 분산된 AZ91 복합재료를 제조하였으며 열처리를 통하여 석출상을 제어하였다. SiC 섬유와 기지합금의 계면에 연속적인 Mg₂Si상이 형성되면서 계면 결합력이 향상되었고, 제조된 복합재료의 상온 인장강도는 479 MPa로 우수한 기계적 특성을 나타내었다.

• 마이크로전자및패키징학회지
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• 제24권1호
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• pp.1-8
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• 2017

Fe-9.8Si-6.0Al mother alloy was manufactured using by Fe-3.5Si recycled scrap and Si powder. And then, soft magnetic alloy powder of $D_{50}$ size and sphere type were prepared by gas atomization process. To obtain the soft magnetic powder of a high aspect ratio, in the first, we conducted the ball milling process for 8 hours. And heat treatment was performed under $650^{\circ}C$, 2 hours and $N_2$ atmosphere condition for reducing the residual stress of the powder. Based on these process, we made around $50{\mu}m$ diameter Fe-9.8Si-6.0Al powder, which morphology and shape was a similar to the commercial Fe-Si-Al powder. Finally, the soft magnetic sheets were prepared by tape casting process using by those powders. The permeability of the tape casting sheet was measured, and we confirmed the possibility of reusing to the soft magnetic materials of Fe-Si electric sheet scrap.

• 한국재료학회지
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• 제24권10호
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• pp.509-514
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• 2014

We demonstrate a simple and effective method to accurately position silicon nanowires (Si NWs) at desirable locations using drop-casting of Si NW inks; this process is suitable for applications in nanoelectronics or nanophotonics. Si NWs were assembled into a lithographically patterned sacrificial photoresist (PR) template by means of capillary interactions at the solution interface. In this process, we varied the type of solvent of the SiNW-containing solution to investigate different assembly behaviors of Si NWs in different solvents. It was found that the assembly of Si NWs was strongly dependent on the surface energy of the solvents, which leads to different evaporation modes of the Si NW solution. After Si NW assembly, the PR template was cleanly removed by thermal decomposition or chemical dissolution and the Si NWs were transferred onto the underlying substrate, preserving its position without any damage. This method enables the precise control necessary to produce highly integrated NW assemblies on all length scales since assembly template is easily fabricated with top-down lithography and removed in a simple process after bottom-up drop-casting of NWs.

• 한국기계가공학회지
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• 제17권1호
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• pp.16-22
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• 2018

Silicon carbide (SiC) is used in various semiconductor processes because it has superior thermal, mechanical, and electrical characteristics as well as higher chemical and corrosion resistance than existing materials. Due to these characteristics, various manufacturing technologies have been developed for SiC. A recent development among these technologies is Chemical Vapor Deposition SiC (CVD-SiC). Many studies have been carried out on the processing and manufacturing of CVD-SiC due to its different material characteristics compared to existing materials like RB-SiC or Sintered-SiC. CVD-SiC is physically stable and has excellent chemical and corrosion resistance. However, there is a problem with increasing the thickness, because it is manufactured through a deposition process. Additionally, due to its high strength and hardness, it is difficult to subject to machining.

• 소성∙가공
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• 제12권2호
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• pp.102-109
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• 2003

In the manufacturing process of metal matrix composites parts, thixoforging is one of the most effective forming processes. The major purpose of the current study is to provide the proper conditions such as the die shape, the forging velocity, the forging time, the forging pressure and reinforcement injection velocity and pressure on various defects in thixoforged cylinder liner, filling tests were performed by MAGMA S/W. In order to evaluate the effectiveness of the calculated conditions which is given by computer aided engineering, A357, A380 and SiC$_{p}$/A380 cylind~5$mu extrm{m}$r liner were fabricated under the calculated conditions. SiC$_{p}$/A380 composite billets were fabricated by both the mechanical stirring and electrical magnetic stirring process. Incase fo SiC$_{p}$/A380 composite cylinder liner, reinforcement distribution and effect of reinforcement(SiC$_{p}$) content(10~20 vol. %)and size(5.5~14${\mu}{\textrm}{m}$) on the mechanical properties were investigatedstigated.

• 자원리싸이클링
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• 제26권6호
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• pp.45-49
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• 2017

반도체 산업의 실리콘(Si) 제조과정에서 실리콘과 실리콘 카바이드(SiC)를 포함하는 폐 슬러리가 발생하게 된다. 폐 슬러리는 단순히 시멘트로 고형화하여 보관하거나 매립하는 방법이 있지만, 본 연구에서는 제강공정의 부원료인 승온제로 사용하는 방안이 제시되었다. 폐 슬러리를 정제하여 분말을 만들어 SiC계 슬러지 브리켓으로 재활용하였다. SiC계 슬러지 브리켓은 화학적 성분을 분석하고 투입시기와 투입량에 따른 승온제 특성을 관찰하였다. 이 결과 SiC계 슬러지 브리켓은 제강공장에서 저비용과 고효율로 용강온도를 높이는 효과가 있었다.

• 전기전자학회논문지
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• 제23권1호
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• pp.326-329
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• 2019

차세대 전력반도체 소재인 질화갈륨(GaN)이 증착된 GaN-on-Si 기판의 기술성숙도가 높아지면서 Si CMOS 소자와의 단일기판 집적화에 대한 관심이 고조되고 있다. CMOS 특성이 상대적으로 저하되는 (111)Si 보다 (110)Si의 CMOS소자가 집적화 관점에서 유리할 것으로 판단되며, 따라서 향후 전개될 GaN-on-(110)Si 플랫폼을 활용한 GaN 전력반도체 스위치소자와 Si CMOS소자의 단일기판 집적화에 적용될 수 있도록 국내 Si CMOS 파운드리 공정을 (110)Si 기판에 진행하였다. 제작된 CMOS소자의 기본특성 및 인버터체인 회로특성, 그리고 게이트 산화막의 신뢰성 분석을 통해 향후 국내 파운드리공정을 활용한 (110)Si CMOS기술과 GaN의 집적화의 가능성을 검증하였다.

• 한국결정성장학회지
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• 제19권4호
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• pp.159-164
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• 2009

실리콘 기판에 GaN 에피성장을 확인하기 위해, P형 Si(100), Si(111) 기판 전면에 버퍼층으로 40 nm 두께의 코발트실리사이드를 형성시켰다. 형성된 코발트실리사이드 층에 연속으로 HVPE(hydride vapor phase epitaxy)로 하나는 $850^{\circ}C$-12분 + $1080^{\circ}C$-30분(공정I)과, 또 하나 조건은 $557^{\circ}C$-5분 + $900^{\circ}C$-5분(공정II) 조건으로 각각 나누어 진행하여 보았다. GaN의 에피성장을 광학현미경, 주사전자현미경, 주사탐침현미경, 그리고 HR-XRD로 확인하였다. 공정I로는 GaN의 에피성장이 진행되지 않았으며, 공정II에서는 에피성장이 진행되었다. 특히 공정 II는 열팽창에 의해 실리콘 기판과의 자가정렬적인 기판분리 현상을 보였으며, XRD로 GaN의 0002 방향의 결정성 (crystallinity)을 ${\omega}$-scan으로 확인한 결과(100)면 방향의\ 실리콘과 코발트실리사이드를 버퍼층으로 활용하고 저온에서 HVPE를 진행한 조합이 GaN의 에피성장에 유리하였다.