• Korean Chemical Engineering Research
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• v.58 no.2
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• pp.235-247
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• 2020

Simulation study and validation on 50 L/hr pilot-scale Bunsen process was carried out in order to investigate thermodynamics parameters, suitable reactor type, separator configuration, and the optimal conditions of reactors and separation. Sulfur-Iodine is thermochemical process using iodine and sulfur compounds for producing hydrogen from decomposition of water as net reaction. Understanding in phase separation and reaction of Bunsen Process is crucial since Bunsen Process acts as an intermediate process among three reactions. Electrolyte Non-Random Two-Liquid model is implemented in simulation as thermodynamic model. The simulation results are validated with the thermodynamic parameters and the 50 L/hr pilot-scale experimental data. The SO₂ conversions of PFR and CSTR were compared as varying the temperature and reactor volume in order to investigate suitable type of reactor. Impurities in H₂SO₄ phase and HI_X phase were investigated for 3-phase separator (vapor-liquid-liquid) and two 2-phase separators (vapor-liquid & liquid-liquid) in order to select separation configuration with better performance. The process optimization on reactor and phase separator is carried out to find the operating conditions and feed conditions that can reach the maximum SO₂ conversion and the minimum H₂SO₄ impurities in HI_X phase. For reactor optimization, the maximum 98% SO₂ conversion was obtained with fixed iodine and water inlet flow rate when the diameter and length of PFR reactor are 0.20 m and 7.6m. Inlet water and iodine flow rate is reduced by 17% and 22% to reach the maximum 10% SO₂ conversion with fixed temperature and PFR size (diameter: 3/8", length:3 m). When temperature (121℃) and PFR size (diameter: 0.2, length:7.6 m) are applied to the feed composition optimization, inlet water and iodine flow rate is reduced by 17% and 22% to reach the maximum 10% SO₂ conversion.

• Journal of the Korean Ceramic Society
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• v.50 no.2
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• pp.108-115
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• 2013

Oxide coatings were prepared on Al-1050 substrates by an environment-friendly plasma electrolytic oxidation (PEO) process using an electrolytic solution of $Na_2SiO_3$ (8 g/L) and NaOH (3 g/L). The effects of three different duty cycles (20%, 40%, and 60%) and frequencies (50 Hz, 200 Hz, and 800 Hz) on the structure and micro-hardness of the oxide coatings were investigated. XRD analysis revealed that the oxides were mainly composed of ${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, and mullite. The proportion of each crystalline phase depended on various electrical parameters, such as duty cycle and frequency. SEM images indicated that the oxide coatings formed at a 60% duty cycle exhibited relatively coarser surfaces with larger pore sizes and sintering particles. However, the oxides prepared at a 20% duty cycle showed relatively smooth surfaces. The PEO treatment also resulted in a strong adhesion between the oxide coating and the substrate. The oxide coatings were found to improve the micro-hardness with the increase of duty cycle. The structural and physical properties of the oxide coatings were affected by the duty cycles.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.15 no.1
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• pp.83-90
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• 2017

The pyroprocessing of spent nuclear fuel generates LiCl-KCl eutectic waste salt containing radioactive rare earth nuclides. It is necessary to develop a simple process for the treatment of LiCl-KCl eutectic waste in a hot-cell facility. In this study, capture and solidification of a rare earth nuclide (Nd) in LiCl-KCl eutectic salt using an inorganic composite with a $Li_2O-Al_2O_3-SiO_2-B_2O_3$ system was conducted to simplify the existing separation and solidification process of rare earth nuclides in LiCl-KCl eutectic waste salt from the pyroprocessing of spent nuclear fuel. More than 98wt% of Nd in LiCl-KCl eutectic salt was captured when the mass ratio of the composite was 0.67 over $NdCl_3$ in the eutectic salt. The content of $Nd_2O_3$ in the Nd captured-composite reached about 50wt%, and this composite was directly fabricated into a homogeneous and chemical resistant glass waste in a monolithic form. These results will be utilized in designing a process to simplify the existing separation and solidification process.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.19-23
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• 2007

The NiSi is very promising candidate for the metallization in 45 nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25\;{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5\;{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process temperature window for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5\;{\Omega}/{\square}$ and $3\;{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.45-55
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• 2018

Environmentally benign lead-free solder coated ribbon (e. g. SnCu, SnZn, SnBi${\cdots}$) has been intensively studied to interconnect cells without lead mixed ribbon (e. g. SnPb) in the crystalline silicon(c-Si) photovoltaic modules. However, high melting point (> $200^{\circ}C$) of non-lead based solder provokes increased thermo-mechanical stress during its soldering process, which causes early degradation of PV module with it. Hence, we proposed low-temperature conductive paste (CP) based tabbing method for lead-free ribbon. Modules, interconnected by the lead-free solder (SnCu) employing CP approach, exhibits similar output without increased resistivity losses at initial condition, in comparison with traditional high temperature soldering method. Moreover, 400 cycles (2,000 hour) of thermal cycle test reveals that the module integrated by CP approach withstands thermo-mechanical stress. Furthermore, this approach guarantees strong mechanical adhesion (peel strength of ~ 2 N) between cell and lead-free ribbons. Therefore, the CP based tabbing process for lead free ribbons enables to interconnect cells in c-Si PV module, without deteriorating its performance.

• Korean Journal of Materials Research
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• v.14 no.2
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Composites Research
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• v.35 no.6
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• pp.365-370
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• 2022

According to the rapid growth of electric vehicle (EVs) and E-mobility market, Li-ion batteries are one of the most progressive technologies. The demand of LIBs with high energy capacity, rate performance and fast charging is continuously increasing, hence high-performance LIBs should be developed. Si is considered as the most promising anode material to improve energy density because of its high theoretical capacity. However, Si suffers large volume chances during the charging and discharge process, leading to the fast degradation of cycle performance. Therefore, polymeric binders play a key role in electrochemical performance of Si anode by efficiently enduring the Si expansion and maintaining the binding networks in electrode. In this review, we explain the role of polymeric binders in electrode and introduce the anode binders with enhanced mechanical and chemical properties which can improve electrochemical performances of Si-based anode.

• Journal of the Korean housing association
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• v.21 no.3
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• pp.115-124
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• 2010

The environment which has been destroyed for the national growth since 1960's would seem to offer infinite resources to human, but now, the existence of human being is threatened by the development thoughtless for the environment. The World Powers have concentrated on green growth with eco-friendly resource since the end of 20th century. Korea suggested that the vision was the low carbon for green growth in 2008. It is necessary to supply Long-Life Housing in the green technology in terms of the sustainable housing development based on various life style, life cycle of the residences, the restrain remodeling and redevelopment in construction. This study is aim to establish the development of maintenance process to make continuous inhabitation of Long-Life Housing that has the separated SI for maintenance, durability, variability and remodeling. The maintenance for Long-Life Housing is very important to have more than 50~70 years the long term of life cycle in comparison with Housing. Also, the roles of manager and user are important parts in Long-Life Housing. The present maintenance for Housing is shift and repair works by the routine maintenance and demage. However, The maintenance for Long-Life Housing should consider movement and flexibility. In addition, Long-Life Housing requires the proper process of maintenance because it is different from Housing in housing concept, design and constructions stage. Therefore this study shows the efficient maintenance process for Long-Life Housing.

• Clean Technology
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• v.20 no.3
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• pp.298-305
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• 2014

Ash included in coal can cause environmental pollution and it can decrease efficiency of mass and heat transfer by getting scorched and stick in the facilities operated at high temperature. To solve this problem, a feasibility study on pulverized coal fired power plant and integrated gasification combined cycle (IGCC) using the AFC (Ash-Free Coal) as well as the development to remove the ash from the coal was conducted. In this research, optimization of operating condition was proposed by using sensitivity analysis of ASPEN $Plus^{(R)}$ to apply the coal containing under the 200 ppm ash for integrated gasification combined cycle. Particularly, the coal gasification process was classified as three parts : pyrolysis process, volatile matter combustion process and char gasification process. The dimension and operating condition of 1.5 ton/day class non-slagging gasifier are reflected in the coal gasification process model.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1127-1130
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• 2003

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.