한국정보디스플레이학회:학술대회논문집

The Korean Infomation Display Society (한국정보디스플레이학회)
권호 표지

Study the Properties of Silicon Nitride Films prepared by High Density Plasma Chemical Vapor Deposition

  • Gangopadhyay, Utpal (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Do-Young (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Parm, Igor Oskarovich. (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Chakrabarty, Kaustuv (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Chi-Hyung (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Shim, Myung-Suk (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University) ;
  • Yi, Jun-Sin (New materials Lab.(BK 21 Lab.) School of Information and Computer Engineering, Sungkyunkwan University)
  • Published : 2003.07.09
Download PDF
⟨ Previous Next ⟩

Abstract

The characteristics of silicon nitride films deposited in a planar coil reactor using a simple high-density inductively coupled plasma chemical vapor deposition technique have been investigated. The process gases used during silicon nitride deposition cycle were pure nitrogen and a mixture of silane and helium. It has been pointed out that the strong H-atom released from the growing SiN film and Si-N bond healing are responsible for the improved electrical and passivation properties of SiN.

Keywords