• 마이크로전자및패키징학회지
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• 제15권1호
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• pp.7-18
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• 2008

This paper reviews the current development of an ultra-slim SiP for Radio Frequency (RF) application, in which three flip chips, additional passive components and Surface Acoustic Wave (SAW) filters are integrated side-by-side. A systematic investigation is carried out for the design optimization, process and reliability improvement of the package, which comprises several aspects: a design study based on the 3D thermo-mechanical finite element analysis of the packaging, the determination of stress, warpage distribution, critical failure zones, and the figuration of the effects of material properties, process conditions on the reliability of package. The optimized material sets for manufacturing process were determined which can reduce the number of testing samples from 75 to 2. In addition the molded underfilling (MUF) process is proposed which not only saves one manufacturing process, but also improves the thermo-mechanical performance of the package compared with conventional epoxy underfilling process. In the end, JEDEC's moisture sensitivity test, thermal cycle test and pressure cooker tests have also been carried out for reliability evaluation. The test results show that the optimized ultra-slim SiP has a good reliability performance.

• Journal of Electrochemical Science and Technology
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• 제13권1호
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• pp.159-166
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• 2022

The assembly of the micron-sized Si/CNT/carbon composite wrapped with graphene (SCG composite) is designed and synthesized via a spray drying process. The spherical SCG composite exhibits a high discharge capacity of 1789 mAh g^-1 with an initial coulombic efficiency of 84 %. Moreover, the porous architecture of SCG composite is beneficial for enhancing cycling stability and rate capability. In practice, a blended electrode consisting of spherical SCG composite and natural graphite with a reversible capacity of ~500 mAh g^-1, shows a stable cycle performance with high cycling efficiencies (> 99.5%) during 100 cycles. These superior electrochemical performance are mainly attributed to the robust design and structural stability of the SCG composite during charge and discharge process. It appears that despite the fracture of micro-sized Si particles during repeated cycling, the electrical contact of Si particles can be maintained within the SCG composite by suppressing the direct contact of Si particles with electrolytes.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.

• 한국태양에너지학회 논문집
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• 제37권2호
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• pp.77-85
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• 2017

Thin crystalline silicon (C-Si) solar cell is expected to be a low price energy source by decreasing the consumption of Si. However, thin c-Si solar cell entails the bowing and crack issues in high temperature manufacturing process. Thus, the conventional tabbing process, based on high temperature soldering (> $250^{\circ}C$), has difficulties for applying to thin c-Si solar cell modules. In this paper, a conductive paste (CP) based interconnection process has been proposed to fabricate thin c-Si solar cell modules with high production yield, instead of existing soldering materials. To optimize the process condition for CP based interconnection, we compared the performance and stability of modules fabricated under various lamination temperature (120, 150, and $175^{\circ}C$). The power from CP based module is similar to that with conventional tabbing process, as modules are fabricated. However, the output of CP based module laminated at $120^{\circ}C$ decreases significantly (14.1% for Damp heat and 6.1% for thermal cycle) in harsh condition, while the output drops only in 3% in the samples process at $150^{\circ}C$, $175^{\circ}C$. The peel test indicates that the unstable performance of sample laminated at $120^{\circ}C$ is attributed to weak adhesion strength (1.7 N) between cell and ribbon compared to other cases (2.7 N). As a result, optimized lamination temperature for CP based module process is $150^{\circ}C$, considering stability and energy consumption during the fabrication.

• 소성∙가공
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• 제15권3호
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• pp.195-205
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• 2006

This paper focuses on a rheo-forming of am part fabricated by electromagnetic stirring system (EMS). This forming process take place under high pressure of high pressure die casting and thin walled casting is possible. Furthermore, the productivity is better than low pressure die casting because of shorter cycle time. The advantages of rheo-forming are performed in the semi solid state with laminar flow and the gas content is low, which makes welding possible. Therefore this research applies for arm part with EMS and has investigated the mechanical properties after T6 and T5 heat-treatment.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.45-50
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• 2022

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO₂ was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

• 자원리싸이클링
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• 제19권4호
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• pp.51-57
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• 2010

실리콘 웨이퍼공정에서 발생하는 실리콘 슬러지로부터 리싸이클링 공정으로 Si-SiC 혼합물을 분리 회수한 다음 기계적 합성법으로 Si-SiC-CuO-C 복합물을 제조하였으며, 리튬전지 음극물질로서의 가능성을 조사하였다. 실리콘 슬러지의 주요 불순물은 절삭유, 금속불순물 및 SiC를 들 수 있다. 오일세정-자력선별-산세척으로 절삭유와 금속불순물을 제거한 다음 고에너지 밀링법으로 Si-SiC-CuO-C 복합물을 합성하였다. 복합물의 충방전 용량과 사이클 특성을 조사한 결과, 수명에 따른 용량 유지 특성이 향상된 우수한 결과를 얻을 수 있었다. 복합물을 구성하는 SiC와 CuO 관련 물질은 실리콘의 부피팽창으로 인한 기계적 파괴 현상을 억제하는 요소로 작용하는 것으로 추정되며, 반면에 Fe 등과 같은 불순물은 전극의 충방전 용량을 감소시키는 요인으로서 전극물질 합성 전에 10 ppm 이내로 제거되어야 하는 것으로 판단된다.

• 한국수소및신에너지학회논문집
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• 제22권1호
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• pp.51-59
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• 2011

Sulfur-Iodine (SI) cycle, which thermochemically splits water to hydrogen and oxygen through three stages of Bunsen reaction, HI decomposition, and $H_2SO_4$ decomposition, seems a promising process to produce hydrogen massively. Among them, the decomposition of $H_2SO_4$ ($H_2SO_4=H_2O+SO_2+1/2O_2$) requires high temperature heat over $800^{\circ}C$ such as the heat from concentrated solar energy or a very high temperature gas-cooled nuclear reactor. Because of harsh reaction conditions of high temperature and pressure with extremely corrosive reactants and products, there have been scarce and limited number of data reported on the pressurized $H_2SO_4$ decomposition. This work focuses whether the $H_2SO_4$ decomposition can occur at high pressure in a noble-metal reactor, which possibly resists corrosive acidic chemicals and possesses catalytic activity for the reaction. Decomposition reactions were conducted in a Pt-lined tubular reactor without any other catalytic species at conditions of $800^{\circ}C$ to $900^{\circ}C$ and 0 bar (ambient pressure) to 10 bar with 95 wt% $H_2SO_4$. The Pt-lined reactor was found to endure the corrosive pressurized condition, and its inner surface successfully carried out a catalytic role in decomposing $H_2SO_4$ to $SO_2$ and $O_2$. This preliminary result has proposed the availability of noble metal-lined reactors for the high temperature, high pressure sulfuric acid decomposition.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.109.2-109.2
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• 2010

세라믹 필터는 여러 종류의 분진제거 시스템에서 연소 배가스 정제를 위한 가장 적절한 소재로 알려져 있다. 현재까지 다양한 형태의 세라믹 필터가 개발되고 있는데, 캔들 타입(candle type), 튜브 타입(tubular type), 평판 타입(parallel flow type) 등이 그 예이다. 통상적으로 세라믹 캔들 필터는 가압유동층복합발전(PFBC, Pressurize Fluidized-Bed Combustion), 석탄가스화복합발전(IGCC, Integrated coal Gasification Combined Cycle), 석탄가스화연료전지복합발전(IGFC, Integrated coal Gasification Fuel cell Combined cycle)에서 고온 배가스 정제용으로 사용되고 있다. 일반적으로 IGCC나 CTL 합성가스 정제시스템의 경우에는 높은 고압(약 25기압)과 미세분진이 함유되어 있는 분위기에서 운전된다. 그러므로 이때 사용되는 초청정용 세라믹 집진필터는 고온, 고압 및 부식 환경에서 50 MPa 이상을 갖는 높은 강도와 내식성을 갖도록 개발되어야 하기 때문에 SiC(Silicon Carbide)가 가장 적절한 캔들 필터 소재로 적용되고 있다. 이에 따라 집진용 SiC 세라믹 캔들 필터를 개발하기 위해서는 고온에서 내산화성이 우수하고, 부피팽창에 의한 균열이 발생하지 않는 무기결합재의 선정 및 이를 통한 소재의 특성 최적화가 가장 중요한 부분이라 할 수 있다. 본 연구에서는 IGCC나 CTL 공정에 적용하기 위한 SiC 캔들 필터 소재 개발을 위해 래밍성형 공정으로 1m급의 탄화규소 캔들 필터 시작품을 제작하여 SiC 출발입자 크기와 무기계 결합재인 스트론튬 카보네이트의 첨가량 변화에 따른 필터 소재의 특성 평가를 수행하였다.

• BMB Reports
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• 제42권11호
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• pp.725-730
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• 2009

Cyclin E1 (CCNE1), a positive regulator of the cell cycle, controls the transition of cells from G1 to S phase. In numerous human tumors, however, CCNE1 expression is frequently dysregulated, while the mechanism leading to its dysregulation remains incompletely defined. Herein, we showed that CCNE1 expression was subject to post-transcriptional regulation by a microRNA miR-16-1. This was evident at protein level of CCNE1 as well as its mRNA level. Further evident by dual luciferase reporter assay revealed that two evolutionary conserved binding sites on 3' UTR of CCNE1 were the direct functional target sites. Moreover, we showed that miR-16-1 induced G0/G1 cell cycle arrest by targeting CCNE1 and siRNA against CCNE1 partially phenocopied miR-16-1-induced cell cycle phenotype whereas substantially rescued anti-miR-16-1- induced phenotype. Together, all these results demonstrate that miR-16-1 plays a vital role in modulating cellular process in human cancers and indicate the therapeutic potential of miR-16-1 in cancer therapy.