• Radiation Oncology Journal
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• v.28 no.3
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• pp.166-176
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• 2010

Purpose: To determine the appropriate prostate planning target volume (PTV) margins for 3-dimensitional (3D) conformal radiotherapy (CRT) and intensity-modulated radiation therapy (IMRT) patients treated with an endorectal balloon (ERB) under our institutional treatment condition. Materials and Methods: Patients were treated in the supine position. An ERB was inserted into the rectum with 70 cc air prior to planning a CT scan and then each treatment fraction. Electronic portal images (EPIs) and digital reconstructed radiographs (DRR) of planning CT images were used to evaluate inter-fractional patient's setup and ERB errors. To register both image sets, we developed an in-house program written in visual $C^{++}$. A new method to determine prostate PTV margins with an ERB was developed by using the common method. Results: The mean value of patient setup errors was within 1 mm in all directions. The ERB inter-fractional errors in the superior-inferior (SI) and anterior-posterior (AP) directions were larger than in the left-right (LR) direction. The calculated 1D symmetric PTV margins were 3.0 mm, 8.2 mm, and 8.5 mm for 3D CRT and 4.1 mm, 7.9 mm, and 10.3 mm for IMRT in LR, SI, and AP, respectively according to the new method including ERB random errors. Conclusion: The ERB random error contributes to the deformation of the prostate, which affects the original treatment planning. Thus, a new PTV margin method includes dose blurring effects of ERB. The correction of ERB systematic error is a prerequisite since the new method only accounts for ERB random error.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.2
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• pp.185-193
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• 1996

$2.5^{\circ}\;and\;5^{\circ}$ tilted (100) Si wafer were oxidized in dry oxygen, and the differences in thermal oxidation behavior and oxidation induced stacking faults (OSF) between specimens were investigated. Ellipsometer measurements of the oxide thickness produced by oxidation in dry oxygen from 900 to $1200^{\circ}C$ showed that the oxidation rates of the tilted (100) Si were more rapid than those of the (100) Si and the differences between them decreased as the oxidation temperature increased. The activation energies based on the parabolic rate constant, B for (100) Si, $2.5^{\circ}$ off (100) Si and $5^{\circ}$ off (100) Si were 27.3, 25.9, 27.6 kcal/mol and those on the linear rate constant, B/A were 58.6, 56.6, 57.6 kcal/mol, respectively. Also, considerable decrease in the density of oxidation induced stacking faults for the $5^{\circ}$ off (100) Si was observed through optical microscopy after preferentially etching off the oxide layer, and the angle of stacking faults were changed with tilted angles.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.130-135
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• 2003

Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.

• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.335-340
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• 2000

We investigated the role of the capping layers in the formation of the cobalt silicide in Co/Si systems with TiN and Ti capping layers and without capping layers. The Co/Si interfacial reactions and the phase transformations by the rapid thermal annealing (RTA) processes were observed by sheet resistance measurements, XRD, SIMS and TEM analyses for the clean silicon substrate as well as for the chemically oxidized silicon substrate by $H_2SO_4$. We observed the retardation of the cobalt disilicide formation in the Co/Si system with Ti capping layers. In the case of Co/$SiO_2$/Si system, cobalt silicide was formed by the Co/Si reaction due to with the dissociation of the oxide layer by the Ti capping layers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.45-49
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• 2008

The development of manufacturing process of silicon (Si) ingots is one of the important issues to the growth of the photovoltaic industry. Polycrystalline Si wafers shares more than 60% of the photovoltaic market due to its cost advantage compared to mono crystalline silicon wafers. Several solidification processes have been developed by industry including casting, heat exchange method (HEM) and electromagnetic casting. In this paper, the advanced directional solidification (ADS) method is used to growth of large sized polycrystalline Si ingot. This method has the advantages of the small heat loss, short cycle time and efficient directional solidification. The numerical simulation of the process is applied using a fluid dynamics model to simulate the temperature distribution. The results of simulations are confirmed efficient directional solidification to the growth of large sized polycrystalline Si ingot above 240 kg.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.68-72
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• 2005

본 논문에서는 $Bi_{3}Ti_{4}O_{12}$에 Nd를 치환했을 때 향상되는 강유전체 특성을 sol-gel 방법을 이용하여 분석하였다. 이를 위해 $10\;wt\%$의 $12\%$과량의 Bi가 첨가된 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$ sol-gel 용액을 제작하였다. BNT 박막은 $Pt/TiO_2/SiO_2/Si$ 기판 위에 스핀 코팅 방법을 이용하여 증착하였으며, 최종 증착된 박막의 조성은 Rutherford backscattering spectroscopy 분석을 이용하여 $Bi_{3.15}Nd_{0.85}Ti_{13}O_{12}$임을 확인하였다. 200 nm 두께의 BNT 박막은 XRD 분석을 통해 (117)방향에서 강한 피크가 나오며, (001) 방향에서 Nd 치환에 따른 효과로 억제된 피크가 나오는 것을 확인하였다. Pt/BNT/Pt 구조를 이용하여 잔류분극을 측정한 결과 7 V에서 $48\;{\mu}\;C/cm^2$ 이 나왔다. 이것은 다른 강유전체 물질인 PZT, SBT, BLT보다 월등히 큰 값이다.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.364-371
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• 1997

Silicon trench etching has been carried out using a magnetically enhanced reactive ion etching system in HBr plasma containing He-$O_2$, $CF_4$. The changes of etch rate and etch profile, the degree of residue formation, and the change of surface chemical state were investigated as a function of additive gas flow rate. A severe lateral etching was observed when pure HBr plasma was used to etch the silicon, resulted in a pot shaped trench. When He-$O_2$, $SiF_4$ additives were added to HBr plasma, the lateral etching was almost eliminated and a better trench etch profile was obtained. The surface etched in HBr/He-$O_2/SiF_4$ plasma showed relatively low contamination and residue elements compared to the surface etched in HBr/He-$O-2/CF_4$plasma. In addition, the etching characteristics including low residue formation and chemically clean etched surface were obtained by using HBr containing He-$O_2$ or $SiF_4$ additive gases instead of $CF_4$ gas, which were confirmed by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and atomic force microscopy (AFM).

• Journal of the Mineralogical Society of Korea
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• v.16 no.3
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• pp.233-243
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• 2003

Microstructures and chemistry of anorthoclase, a high-temperature phase of alkali feldspars, were studied using EPMA and TEM. BSE images of anorthoclase displayed mixtures of Na-rich areas and K-rich areas forming lamella of various sizes. EPMA analysis indicated that the Na-rich area is composed of Ab: 81%, Or: 3% and An: 11% in average, while the K-rich area is composed of Ab: 45%, Or: 44% and An: 11 % in average. TEM analysis revealed albite with Albite twins in the Na-rich area, contrasting to mixtures of albite with fine Albite twins and orthoclase without twins, forming regular lamella of about 100 nm sizes, in the K-rich area. The [001] electron diffraction pattern of the K-rich area also indicated coexistence of the two phases. While streaking parallel to the (010)$^{*}$ direction appeared only in albite due to the twin structure, streaking parallel to the $(100)^{ *}$ direction appeared both in albite and orthoclase, probably due to strain on the interface as well as order-disorder phenomena of Al and Si. It is suggested that the reverse orientation of albite and orthoclase is caused by pole switching to reduce strain on their interfaces. Based on these observations and analyses, the mineral studied is identified as lower-temperature cryptoperthite rather than high-temperature anorthoclase, which has a midium degree of Al-Si ordering and $400^{\circ}C$∼$600^{\circ}C$ of estimated temperatures for the microstructure formation.

• Journal of the Korean Society for Nondestructive Testing
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• v.19 no.3
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• pp.180-188
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• 1999

The dynamic elastic properties of metal matrix composites were investigated by resonant ultrasound spectroscopy(RUS). The composites used in this study consisted of 2124 aluminum alloy reinforced with different concentrations of SiC particles. RUS can determine the nine independent elastic stiffness($C_{ij}$) for the orthorhombic symmetry on a small specimen simultaneously. The elastic constants were determined as a function of the volume fraction. A concept of effective aspect ratio. which combine the aspect ratio and the orientation of reinforcement. was used to calculate the initial moduli from Mori-Tanaka theory for the input of RUS minimization code. Young's moduli can be obtained from the measured stiffnesses. The results show that the elastic stiffness increases with increment of the particle content. The behavior of elastic stiffness indicates that the particle redistribution induced by the extrusion process enlarges the transversely isotropic symmetry as the fraction of reinforced particles increase. This relationship could be used for determination of the volume fractions of reinforcement as a potential tool of nondestructive material characterization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.293-293
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• 2012

마그네트론 스퍼터링으로 Al과 Al 합금(Al-3wt%Si, Al-10wt%Si) 박막을 코팅하였다. 기판은 냉연강판과 Si 웨이퍼를 사용하였으며 알코올과 아세톤으로 초음파 세척 후 진공용기에서 플라즈마 청정을 실서히였다. 시편 청정이 끝나면 기판은 0, 30, 45, 60, 90도의 다양한 각도로 고정시켜 Al과 Al 합금 박막을 코팅하였다. 빗각 증착 기술(Oblique Angle Deposition: OAD)은 입사증기가 기판과 수직하지 않게 기울여 코팅하는 방법으로 조직을 다양하게 제어할 수 있다. 빗각으로 코팅한 순수한 Al 박막의 경우, 동일한 두께의 박막보다 반사율 및 표면조도, 내식성이 향상되는 결과를 얻었다. 따라서 본 연구에서는 빗각 및 Si 함유량이 반사율 및 표면조도, 내식성에 미치는 영향을 비교 분석하였다. 기판의 위치에 따른 변화를 관찰하기 위해 시편은 좌, 우, 중간으로 구분하여 분석하였다. 단일층 박막의 경우 타겟과의 거리에 따른 두께 편차가 발생하였으며 이러한 두께 편차를 해결하기 위한 방법으로 동일한 각도를 유지하며 반대 방향으로 회전시켜 다층구조로 박막을 제조하였다. Si 함유량 및 빗각에 따른 반사율 및 표면조도를 분석하였으며 내식성 평가를 위한 염수 분무 테스트도 실시하여 각각의 공정 변수에 따른 결과를 비교 분석하였다.