• Title/Summary/Keyword: SF6 gas

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Fabrication of surface-enhanced Raman scattering substrate using black silicon layer manufactured through reactive ion etching (RIE 공정으로 제조된 블랙 실리콘(Black Silicon) 층을 사용한 표면 증강 라만 산란 기판 제작)

  • Kim, Hyeong Ju;Kim, Bonghwan;Lee, Dongin;Lee, Bong-Hee;Cho, Chanseob
    • Journal of Sensor Science and Technology
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    • v.30 no.4
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    • pp.267-272
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    • 2021
  • In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O2/SF6 gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of SixOyFz did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 103 to 25 × 103 cps. When the Ag thickness was 150 nm, the increase declined to 30 × 103 cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 103 to 33 × 103 cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 103 cps.

Black Silicon of Pyramid Structure Formation According to the RIE Process Condition (RIE 공정 조건에 의한 피라미드 구조의 블랙 실리콘 형성)

  • Jo, Jun-Hwan;Kong, Dae-Young;Cho, Chan-Seob;Kim, Bong-Hwan;Bae, Young-Ho;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.20 no.3
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    • pp.207-212
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    • 2011
  • In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

F Ion-Assisted Effect on Dry Etching of GaAs over AlGaAs and InGaP (GaAs/AlGaAs와 GaAs/InGaP의 건식 식각 시 Flourine 이온의 효과)

  • Jang, Soo-Ouk;Park, Min-Young;Choi, Chung-Ki;Yoo, Seung-Ryul;Lee, Je-Won;Song, Han-Jung;Jeon, Min-Hyon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.164-165
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    • 2005
  • The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

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Design and Fabrication of an LPVT Embedded in a GIS Spacer (GIS 스페이서 내장형 저전력 측정용 변압기의 설계 및 제작)

  • Seung-Gwan Park;Gyeong-Yeol Lee;Nam-Hoon Kim;Cheol-Hwan Kim;Gyung-Suk Kil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.2
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    • pp.175-181
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    • 2024
  • In electrical power substations, bulky iron-core potential transformers (PTs) are installed in a tank of gas-insulated switchgear (GIS) to measure system voltages. This paper proposed a low-power voltage transformer (LPVT) that can replace the conventional iron-core PTs in response to the demand for the digitalization of substations. The prototype LPVT consists of a capacitive voltage divider (CVD) which is embedded in a spacer and an impedance matching circuit using passive components. The CVD was fabricated with a flexible PCB to acquire enough insulation performance and withstand vibration and shock during operation. The performance of the LPVT was evaluated at 80%, 100%, and 120% of the rated voltage (38.1 kV) according to IEC 61869-11. An accuracy correction algorithm based on LabVIEW was applied to correct the voltage ratio and phase error. The corrected voltage ratio and phase error were +0.134% and +0.079 min., respectively, which satisfies the accuracy CL 0.2. In addition, the voltage ratio of LPVT was analyzed in ranges of -40~+40℃, and a temperature correction coefficient was applied to maintain the accuracy CL 0.2. By applying the LPVT proposed in this paper to the same rating GIS, it can be reduced the length per GIS bay by 11%, and the amount of SF6 by 5~7%.

Variations of N2O by no tillage and conventional-tillage practices under the different kinds of fertilizer applications on the cultivation of soybean in Korea

  • Yoo, Jin;Oh, Eun-Ji;Kim, Suk-Jin;Woo, Sun-Hee;Chung, Keun-Yook
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2017.06a
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    • pp.314-314
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    • 2017
  • Anthropogenic activities have increased the concentrations of greenhouse gases, such as $CO_2$, $CH_4$, $N_2O$, HFCs, $SF_6$, and PFCs, in the atmosphere. Among others, $N_2O$ is well known as an important greenhouse gas accounting for 7.9% of the total greenhouse effect and the effect of its emission is 310 times greater than that of $CO_2$. Agricultural $N_2O$ emissions are now thought to contribute to about 60% of the global anthropogenic $N_2O$ emission, which have been increased primarily due to fertilizer N consumption and manure management. Therefore, the reduction of $N_2O$ emissions in agriculture is being required. This study was conducted to determine the variation of $N_2O$ emissions by no-tillage (NT) and conventional tillage (CT) practices in the cultivation of soybean from the sandy loam soils under the different kinds of fertilizer treatments June through September 2016 in Cheong-ju, Republic of Korea. An experimental plot, located in the temperate climate zone, was composed of two main plots that were NT and CT, and were divided into four plots, respectively, in accordance with types of fertilizers (chemical fertilizer, liquid pig manure, hairy vetch and non-fertilizer). Among all the treatments, $N_2O$ emission was the highest in August and the lowest in June. When $N_2O$ emissions were evaluated during the growing season (June to September) in all fertilizer treatments, NT with hairy vetch treatment emitted the highest $N_2O$ emission in August, whereas, $N_2O$ emissions was the lowest in NT with non-fertilizer treatment in June, respectively (p = 0.05). Based on the cumulative amount of $N_2O$ emissions during the growing season of soybean, NT had lower $N_2O$ emission than CT by 0.01 - 0.02 kg $N_2O$, although NT had higher $N_2O$ emission than CT by 0.03 kg $N_2O$ in only the chemical fertilizer treatments. As a result, it seems that the applications of liquid pig manure and hairy vetch rather than chemical fertilizer could decrease the $N_2O$ emission in NT, compared to CT.

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The Effects of Korean Seaweeds on In vitro Ruminal Fermentation Characteristics and Methane Production (국내 자생 해조류 첨가가 in vitro 반추위 발효 성상 및 메탄 발생량에 미치는 영향)

  • Kim, Byul;Wi, Jisoo;Lee, Yookyung;Kim, Hyunsang;Seong, Pilnam;Lee, Sungdae;Hwang, Ilki;Kim, Hyunchul;Lee, Seongshin
    • Korean Journal of Organic Agriculture
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    • v.32 no.3
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    • pp.277-288
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    • 2024
  • The present study was conducted to investigate the effects of seaweeds on in vitro ruminal fermentation characteristics and methane gas production. Five seaweeds (Dictyota dichotoma, DD; Chrysymenia wrightii Yamada, CW; Codium fragile, CF; Sargassum fusiforme, SF; Gracilaria vermiculophylla, GV) were obtained from National Institute of Fisheries Science (NIFS) in South Korea. The ruminal fluids were collected from 3 rumen-cannulated Hanwoo steers (average 12-months-old). The buffered ruminal fluids (50 mL) were incubated with substrates (0.4 g of concentrate and 0.1 g of rice straw in dry matter basis) and seaweeds (5% of substrates) at 39℃ for 24 and 48 hours. The total gas and methane production of all treatments incubated for 24 hours were not affected by the seaweed. However, methane production (mL/g of digested dry matter) in the CW and CF treatments incubated for 48 hours was decreased compared to control (p<0.05). Additionally, the ruminal pH of all treatments incubated for 24 and 48 hours was lower than control (p<0.05). There was no signigicant difference in total VFA concentration at 24 hours of incubation, but it was higher in the CF treatment at 48 hours of incubation (p<0.05). The dry matter digestibility of all treatments incubated for 24 and 48 hours were not affected by the seaweed. In conclusion, Codium fragile reduced in vitro methane production without negative effects on rumen fermentation characteristics.