• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.189.1-189.1
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• 2011

Global warming effect was intensified due to rapid growth of fossil fuel consumption caused by urbanization and industrialization. Various efforts was being done to solve the problems leading to anomaly climate such as flood, downpour, heavy snow. As a results of international efforts for management of global warming, Kyoto Protocol, which was passed in Kyoto, Japan in 1997, designated $CO_2$, $CH_4$, $N_2O$, HFCs, PFCs, $SF_6$ as a global warming gases. And IPCC(Intergovernmental Panel on Climate Change) suggested IPCC guideline for systematic establishment of national greenhouse gas inventory. Among five categories in IPCC guideline, the representative emission source of waste category is SWDS(solid waste disposal site). The concentrative research should progress for effective management of greenhouse gas related with waste. In this study, Tier1 and Tier2 methods which was suggested by 2006 IPCC(Intergovernmental Panel on Climate Change) guideline, was used to predict methane generation from C sanitary landfill located in Chungju area. To predict methane generation from C sanitary landfill, all factors were defaults values that were provided by 2006 IPCC guideline and Korea emission factors for Tier1 and Tier2 method. And economics of generated methane was estimated. From the predicted result using IPCC guideline, the methane generation was persistingly increased over a 9-year period(2000 ~ 2008). Aggregated amount of methane generation was about 3,017ton and 3,170ton predicted by Tier1 and Tier2, respectively. From the results of estimated economic value gained by generated methane from the C sanitary landfill for ten years from now(2010 ~ 2020), the profit was about 2.39 ~ 2.76 hundred million won.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.2
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• pp.193-201
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• 2001

Acidic air pollutants were collected to characterize indoor air quality in a residential area in the summer. All indoor and outdoor samples were measured simultaneously using an annular denuder system(ADS) in Seoul. The data set was collected from July 26 to September 11, 1997. The mean indoor/outdoor ratios measured from this study were : 0.34 for $HNO_3$; 0.91 for $HNO_2$; 0.22 for $SO_2$; 1.34 for $NH_3$; 0.78 for $PM_{2.5}(d_p$ <2.5 $mutextrm{m}$); 0.90 for $SO_{4}^{2-}$; 0.68 for $NO_{3}^{-}$ and 0.79 for $NH_{4}^{+}$. Indoor concentrations of $HNO_3$, $SO_2$ and $PM_{2.5}$ were highly correlated with the outdoor concentrations. The relationship between indoor and outdoor air is dependent, to a large extent, on the rate of air exchange between these two environments. A tracer-gas decay technique with sulfur hexafluoride ($SF_{6}$) as a tracer gas was used to estimate the air exchange of a private home in the summer. The average air exchange rate was estimated to be 23.7 hr(sup)-1. The deposition velocities for $SO_{4}^{2-}$, $NO_{3}^{-}$ and $NH_{4}^{+}$ calculated were 0.17, 0.69 abd 0.39 cm/sec, respectively.

• Proceedings of the KIEE Conference
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• 2008.10c
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• pp.226-228
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• 2008

In recent years, the companies of electric power equipment for MV and HV classes trend to develop the eco-friendly insulated(solid, eco-gas, air etc.) switchgear which replaces existent SF6 gas insulated switchgear due to environmental problems such as global warming and so on. This paper makes reference to the newly developed Solid Insulated Switchgear (SIS) which uses the eco-friendly material such as epoxy for insulation. The insulation of the solid insulated switchgear (SIS) is composed of an epoxy, vacuum and air. The solid insulated switchgear (SIS) is a slate of the art product. The advantages of SIS are advanced reliability, economical efficiency, safety, maintenance free, reduction of installation area and the protection of environment. The solid insulated switchgear (SIS) is FE Analyzed such as electromagnetic, mechanical, thermal and fluid in order to find the optimal design. Thens SIS has been verified by international standard test. (IEC 62271 - 100 and so on.) As a result of this, the solid insulated switchgear (SIS) has been estimated as an alternative for eco-friendly MV class switchgear.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.277-284
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• 2013

Carbon coils could be synthesized using $C_2H_2/H_2$ as source gases and $SF_6$ as an incorporated additive gas under thermal chemical vapor deposition system. The Ni layer on the $SiO_2$ substrate was used as a catalyst for the formation of the carbon coils. The characteristics (formation densities, morphologies, and geometries) of the as-grown carbon coils on the substrate with or without the $H_2$ plasma pretreatment process were investigated. By the relatively short time (1 minute) $H_2$ plasma pretreatment on the Ni catalyst layered-substrate prior to the carbon coils synthesis reaction, the dominant formation of the carbon microcoils on the substrate could be achieved. After the relatively long time (30 minutes) $H_2$ plasma pretreatment process, on the other hand, we could obtain the noble-shaped geometrical nanostructures, namely the formation of the numerous carbon nanocoils along the growth of the carbon microcoils. This noble-shaped geometrical nanostructure seemed to play a promising role as the good catalyst support for holding the very tiny Ni catalyst grains.

• Journal of Welding and Joining
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• v.24 no.2
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• pp.64-70
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• 2006

The 3-dimensional (3D) chip stacking technology is a leading technology to realize a high density and high performance system in package (SiP). There are several kinds of methods for chip stacking, but the stacking and interconnection through Cu filled through-hole via is considered to be one of the most advanced stacking technologies. Therefore, we studied the optimum process of through-hole via formation and Cu filling process for Si wafer stacking. Through-hole via was formed with DRIE (Deep Reactive ion Etching) and Cu filling was realized with the electroplating method. The optimized conditions for the via formation were RE coil power of 200 W, etch/passivation cycle time of 6.5 : 6 s and SF6 : C4F8 gas flow rate of 260 : 100 sccm. The reverse pulsed current of 1.5 A/dm2 was the most favorable condition for the Cu electroplating in the via. The Cu filled Si wafer was chemically and mechanically polished (CMP) for the following flip chip bumping technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.162-162
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• 2014

최근 들어 wearable computing에 대한 수요가 증가하면서 flexible device에 대한 연구가 활발히 진행되고 있다. 하지만, flexible device를 구현하기 위해서는 기판의 damage를 줄이기 위한 저온공정, device life-time 향상을 위한 passivation, 와이어 본딩 등 다양한 문제들이 해결 되어야 한다. 이러한 문제들 중, polymer 기판과 금속간의 접착력을 향상시키기 위해서 많은 연구자들은 기판의 표면에 adhesive layer를 도포하거나 금속잉크의 solvent를 변화시키는 등의 연구를 진행해왔다. 종래의 연구는 기존 device를 대체 할 수 있을 정도의 생산성과 polymer 기판에 대한 열 적인 손상 이 문제가 되었다. 종래의 문제를 해결하기 위하여 저온공정, in-line system이 가능한 준 준 대기압 플라즈마를 사용하였다. 본 연구에서는 금속잉크를 Ink-jet으로 jetting하여 와이어 본딩 하는 과정에서 전도성 ink의 선폭을 유지시키고 접착력을 향상하기 위하여 준 대기압 플라즈마 공정을 이용하여 이러한 문제점을 해결하고자 하였다. Polymer 기판 표면에 roughness를 만들기 위해 대략 수백 nm 크기를 갖는 graphene flake를 spray coating하여 마스크로 사용하고 준 대기압 플라즈마를 이용하여 표면을 식각 함으로써 roughness를 형성시켰다. 준 대기압 플라즈마를 발생시키기 위해 double discharge system에서 6 slm/1.5 slm (He/O2) gas composition을 하부 전극에 흘려보내고 60 kHz, 5 kV 파워를 인가하였다. 동시에 상부 전극에는 30 kHz, 5 kV 파워를 인가하여 110초 동안 표면 식각 공정을 진행하였다. Graphene flake mask가 coating되어 있는 유연기판을 산소 플라즈마 처리 한 후 물에 3초 동안 세척하여 표면에 남아있는 graphene flake를 제거하고 6 slm/0.3 slm (He/SF6)의 유량으로 주파수와 파워 모두 동일 조건으로 110초 동안 표면 처리를 하였다. Figure 1은 표면 개질 과정과 graphene flake를 mask로 사용하여 얻은 roughness 결과를 SEM을 이용하여 관찰한 결과이다. 이와 같이 실험한 결과 ink와 기판간의 접촉면적을 늘려주고 접촉 각을 조절하여 Wenzel model 을 형성 할 수 있는 표면 roughness를 생성하였고 표면의 화학적 결합을 C-F group으로 치환하여 표면의 물과 접촉각 이 $47^{\circ}$에서 $130^{\circ}$로 증가하는 것을 확인하였다.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.30 no.3
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• pp.207-214
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• 2017

High voltage electric power transmitter GIS(Gas Insulated Switchgear) above 72.5kV needs to satisfy domestic Korean peninsular standard(ES-6110-0002) in KEPCO with respect to normal and special operation conditions which include internal gas pressure, dead weight, wind and seismic load. Some other requirements not described in Korean standard can be applied from other international standards such as IEC(International Electronical Committee) 62271-203 and 62271-207. The GIS is a kind of pressure vessel structure made of aluminum and filled with SF6 gas of internal pressure 0.4~0.5MPa. Finite element analysis of GIS is performed with such operational loads including seismic loading and the stability and reliability is determined according to ASME BPVC(Boiler and Pressure Vessel Code) SEC. VIII standard where the allowable stress level of the pressure vessel is suggested. The result shows that the stress of GIS is satisfied the allowable stress level and the safety factor is about 2.3 for Korean peninsular standard.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.169-169
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• 2008

To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

• Journal of Animal Environmental Science
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• v.16 no.3
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• pp.175-180
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• 2010

Many greenhouse gases occur naturally, such as water vapor, carbon dioxide, methane, nitrous oxide, and ozone. Others such as hydrofluorocarbons (HFCs), perfluorocarbons (PFCs), and sulfur hexafluoride ($SF_6$) result exclusively from human industrial processes. Current global warming has been linked to anthropogenic greenhouse gas concentration increases. Methods to quantify greenhouse gas emissions during animal agriculture and the possibility to apply those to circumstance in the world were studied. Various chamber methods with trace gas analyzer (TGA) were used to quantify greenhouse gas emissions from stored manure. Methane fluxes from pails storing liquid swine manure were measured. Methane emissions increased a little with time and mean was 393.2 ${\mu}g\;m^{-2}\;s{-1}$ (standard error : 4 ${\mu}g\;m^{-2}\;s{-1}$).

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.277-277
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• 2011

디스플레이의 기술발전에 의해 대면적 고해상도의 LCD가 제작되어 왔다. 이에 따라 LCD 점등검사를 위한 Probe Unit의 기술 또한 급속도로 발전하고 있다. 고해상도에 따라 TFT LCD pad가 미세피치화 되어가고 있으며, panel의 검사를 위한 Probe 또한 30 um 이하의 초미세피치를 요구하고 있다. 따라서, 초미세 pitch의 LCD panel의 점등검사를 위한 Probe Unit의 개발이 시급하가. 본 연구에서는 30 um 이하의 미세피치의 Probe block을 위한 Slit wafer의 식각 공정 조건을 연구하였다. Si 공정에서 식각율과 식각깊이에 따른 profile angle의 목표를 설정하고, 식각조건에 따라 이 두 값의 변화를 관측하였다. 식각실험으로 Si DRIE 장비를 이용하여, chamber 압력, cycle time, gas flow, Oxygen의 조건에 따라 각각의 단면 및 표면을 SEM 관측을 통해 최적의 식각 조건을 찾고자 하였다. 식각율은 5um/min 이상, profile angle은 $90{\pm}1^{\circ}$의 값을 목표로 하였다. 이 때 최적의 식각조건은 Etching : SF6 400 sccm, 10.4 sec, passivation : C4F8 400 sccm, 4 sec의 조건이었으며, 식각공정의 Coil power는 2,600 W이었다. 이러한 조건의 공정으로 6 inch Si wafer에 공정한 결과 균일한 식각율 및 profile angle 값을 보였으며, oxygen gas를 미량 유입함으로써 식각율이 균일해짐을 알 수 있었다. 결론적으로 최적의 Slit wafer 식각 조건을 확립함으로써 Probe Unit을 위한 Pin 삽입공정 또한 수율 향상이 기대된다.