• 센서학회지
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• 제30권4호
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• 센서학회지
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• 제20권3호
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• pp.207-212
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• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.164-165
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• 2005

The dry etch characteristics of GaAs over both AlGaAs and InGaP in planar inductively coupled $BCl_3$-based plasmas(ICP) with additions of $SF_6$ or $CF_4$ were studied. The additions of flourine gases provided enhanced etch selectivities of GaAs/AlGaAs and GaAs/InGaP. The etch stop reaction involving formation of involatile $AlF_3$ and $InF_3$ (boiling points of etch products: $AlF_3\sim1300^{\circ}C$, $InF_3$ > $1200^{\circ}C$ at atmosphere) were found to be effective under high density inductively coupled plasma condition. Decrease of etch rates of all materials was probably due to strong increase of flourine atoms in the discharge, which blocked the surface of the material against chlorine neutral adsorption. The process parameters were ICP source power (0 - 500 W), RF chuck power (0 - 30 W) and variable gas composition. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.175-181
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• 2024

In electrical power substations, bulky iron-core potential transformers (PTs) are installed in a tank of gas-insulated switchgear (GIS) to measure system voltages. This paper proposed a low-power voltage transformer (LPVT) that can replace the conventional iron-core PTs in response to the demand for the digitalization of substations. The prototype LPVT consists of a capacitive voltage divider (CVD) which is embedded in a spacer and an impedance matching circuit using passive components. The CVD was fabricated with a flexible PCB to acquire enough insulation performance and withstand vibration and shock during operation. The performance of the LPVT was evaluated at 80%, 100%, and 120% of the rated voltage (38.1 kV) according to IEC 61869-11. An accuracy correction algorithm based on LabVIEW was applied to correct the voltage ratio and phase error. The corrected voltage ratio and phase error were +0.134% and +0.079 min., respectively, which satisfies the accuracy CL 0.2. In addition, the voltage ratio of LPVT was analyzed in ranges of -40~+40℃, and a temperature correction coefficient was applied to maintain the accuracy CL 0.2. By applying the LPVT proposed in this paper to the same rating GIS, it can be reduced the length per GIS bay by 11%, and the amount of SF6 by 5~7%.

• 한국작물학회:학술대회논문집
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• 한국작물학회 2017년도 9th Asian Crop Science Association conference
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• pp.314-314
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• 2017

Anthropogenic activities have increased the concentrations of greenhouse gases, such as $CO_2$, $CH_4$, $N_2O$, HFCs, $SF_6$, and PFCs, in the atmosphere. Among others, $N_2O$ is well known as an important greenhouse gas accounting for 7.9% of the total greenhouse effect and the effect of its emission is 310 times greater than that of $CO_2$. Agricultural $N_2O$ emissions are now thought to contribute to about 60% of the global anthropogenic $N_2O$ emission, which have been increased primarily due to fertilizer N consumption and manure management. Therefore, the reduction of $N_2O$ emissions in agriculture is being required. This study was conducted to determine the variation of $N_2O$ emissions by no-tillage (NT) and conventional tillage (CT) practices in the cultivation of soybean from the sandy loam soils under the different kinds of fertilizer treatments June through September 2016 in Cheong-ju, Republic of Korea. An experimental plot, located in the temperate climate zone, was composed of two main plots that were NT and CT, and were divided into four plots, respectively, in accordance with types of fertilizers (chemical fertilizer, liquid pig manure, hairy vetch and non-fertilizer). Among all the treatments, $N_2O$ emission was the highest in August and the lowest in June. When $N_2O$ emissions were evaluated during the growing season (June to September) in all fertilizer treatments, NT with hairy vetch treatment emitted the highest $N_2O$ emission in August, whereas, $N_2O$ emissions was the lowest in NT with non-fertilizer treatment in June, respectively (p = 0.05). Based on the cumulative amount of $N_2O$ emissions during the growing season of soybean, NT had lower $N_2O$ emission than CT by 0.01 - 0.02 kg $N_2O$, although NT had higher $N_2O$ emission than CT by 0.03 kg $N_2O$ in only the chemical fertilizer treatments. As a result, it seems that the applications of liquid pig manure and hairy vetch rather than chemical fertilizer could decrease the $N_2O$ emission in NT, compared to CT.