• 제목/요약/키워드: SF6 Gas

검색결과 567건 처리시간 0.036초

가스절연 개폐장치의 PD검출용 UHF 대역 외장형 센서 제작 및 감도 특성 (Development of External UHF PD Sensor for the Detection of Partial Discharge in $SF_6$ Gas-insulated Switchgear)

  • 이창용;홍철용;최병화;윤자홍;남극채;정재기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1799-1801
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    • 2004
  • We have developed the external-type PD sensors for detecting of the electromagnetic waves up to ultra high frequency (UHF) bands, propagating in various type of GIS. Sufficiently high sensitivity and accuracy for practical use were achieved for the external PD sensor. The experience at the fields and the criteria for the judgment are also discussed in detail.

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가스차단기 전류영점영역에서의 열유동특성에 관한 연구 (Thermal Flow Characteristics of Gas Circuit Breakers near Current Zero Period)

  • 이종철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1772-1774
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    • 2004
  • Because the physics occurring during an interruption process is not well known, it is not easy to analyze the characteristics of a self-blast circuit breaker neither theoretically nor experimentally. Fortunately the available computational power and the numerical method improved recently make it possible to predict an interruption process as precisely and fast as possible. Therefore many researches using computational methods have been done for the interruption process of interrupters and applied to extend the information such as thermal and dielectric reignition. In this paper, we have simulated the interruption process of SF6 self-blast circuit breakers with the arc plasma during the fault interruption of a 10 kA current. The CFD program used here is coupled with the electromagnetic field analysis, the radiation model and the effects of turbulence. Through this work, we have get further information about the thermal performance as well as the behavior of the arc. The results have been compared with the measured arc voltage.

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평등/불평등 전계하의 제조공기(I-Air)에 대한 압력별 절연파괴강도 특성 (Dielectric Strength for Imitation Air with Pressure Variation under Uniform and Non-Uniform Fields)

  • 이창욱;이창훈;최은혁;이상호;이광식
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2007년도 추계학술대회 논문집
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    • pp.263-266
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    • 2007
  • In this paper approves (AC and DC) high voltage by experimental GIS(Gas Insulated Switchgear) chamber and (AC and DC) power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at (AC and DC) high voltage of Imitation I-Air, $N_2$ : $O_2$ = 79(%) : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's Dielectric Strength using uniform and non-uniform fields(sphere-sphere and Needle-Plane electrode) and studied relations dielectric strength($V_D$) by each P different d.

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Study on the n+ etching process in TFT-LCD Fabrication for Mo/Al/Mo Data Line

  • Choe, Hee-Hwan;Kim, Sang-Gab;Lim, Soon-Kwon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.1111-1113
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    • 2004
  • n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.

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인공신경망을 이용한 수변전설비의 예방보전을 위한 고장 조기 감지시스템에 관한 연구 (A Study on the Fault Early Detection System for the Preventive Maintenance in Power Receiving and Substation)

  • 이정기
    • 한국산업융합학회 논문집
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    • 제14권3호
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    • pp.95-100
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    • 2011
  • The modern society longing for the convenience of up-to-date technology, there are attempts of miniaturization and high reliance of power equipments in the effectiveness aspect of urban area's usage of space while requiring more electrical energy than now. Consequently, paper used to the Neral Network for a forcasting conservation system. A neral network is powerful asta modeling tool that is able to capture and represent complex input/output relationships. The true power and advantage of neral networks lies in their ability to learn these relationships directly from the data being modeled. Traditional linear models are simply inadequate when it comes to modeling data that contains non-linear characteristics. Form results of this study, the Neral Network is will play an important role for insulation diagnosis system of real site GIS and power eqipment using $SF_6$ gas.

170kV GIS의 내부고장 ARC 상태 시험결과 (The verified results of arc phenomena when malfunctions occur inside 170kV GIS)

  • 전상동;김도원;이봉희
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2011년도 제42회 하계학술대회
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    • pp.492-494
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    • 2011
  • 전력설비 증가와 더불어 GIS 사용이 확대되고 있는 상황에서 GIS 내부고장 발생시 복구 지연으로 인한 사례가 지속 발생하고 있다. 이를 예방하기 위해 170kV GIS 고장구간 판정시스템용 압력센서를 개발하고 검증을 위해 실사용 GIS 2대를 이용하여 내아크 시험을 수행한 결과이다. 시험을 통해 고장시 GIS 탱크 내부의 압력, 온도, 압력파를 측정하였고 SF6 Gas 배관과 연결된 현장조작함(LCP)내 가스주입구에 설치한 압력센서의 동작유무을 검증하였다. 시험결과 유동해석(CFD) 등 시뮬레이션 예측보다 압력 및 온도 상승이 높게 측정되었고 제품에 대한 신뢰성과 확대적용 가능성을 확인할 수 있었다.

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ECR Etch 에 의한 $MoSi_2$ 막의 식각 특성 (The Etching Characteristics of $MoSi_2$ film by ECR Etch)

  • 이한신;강희복;박지순;이철진;성영권
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.809-812
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    • 1992
  • Charateristics of the ECR etch were Investigated about $MoSi_2$ layer which is widely used for the capping layer and barrier layer in VLSI metallization. The etch rate was evaluated according to gas ratio of $SF_6/BCl_3$, $N_2$ flow rate, RF power and chamber pressure. The chamber pressure, the most important factor, represented the maximum etch rate at about the pressure of 10 mTorr.

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전자 공명을 이용한 저온 플라즈마 식각에 관한 연구 (A Study on the Law Temperature Plasma Etching using Electron Cyclotron Resonance)

  • 이석현;김재성;황기웅;김원규
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1992년도 하계학술대회 논문집 B
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    • pp.850-853
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    • 1992
  • A cryogenic electron cyclotron resonance plasma etching system has been built to study wafer-temperature in the silicon etching characteristics. The wafer temperature was controlled from -150 to +30 $^{\circ}C$ during etching using the liquid nitrogen cooled helium gas. Although silicon was etched isotropically in $SF_6$ plasma at room temperatures, we found that it is possible to suppress the etch undercut in Si by reducing a substrate temperature without side wall passivation. In addition, the selectivity of silicon to photoresist was improved considerably at a low wafer temperature. Etch rates, anisotropy and selectivity to photo resist are measured as a function of the wafer temperature in the region of -125 $\sim$ 25$^{\circ}C$ and rf bias power of 20W $\sim$ 80W.

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Composite Insulator silicone shed 전계특성 (Characteristices for the Electric Field of Composite Insulator Silicone Shed)

  • 장윤기;최성만;정용수;이동원;김정배
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 Techno-Fair 및 추계학술대회 논문집 전기물성,응용부문
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    • pp.99-100
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    • 2008
  • Composite insulators are rapidly replacing their porcelain counterparts in electrical substation applications. The composite insulator provide technical and safety ad vantages over other types of insulator. These insulators consist of a FRP(Fiber-reinforced polymer), with two metal flanges and silicone rubber. In this paper, we have investigated the influence of electric field different shaped silicone shed under $SF_6$ gas. As a result, shape of silicone rubber does not effected a electric field. However, the shape of shed can be decided the creepage distance.

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불평등 전계하의 제조공기(I-Air)에 대한 절연파괴 특성 (Breakdown Characteristics of Imitation Air under Non-Uniform Fields)

  • 이창욱;이창훈;최은혁;윤대희;장승호;김정배;박원주;이광식
    • 한국조명전기설비학회:학술대회논문집
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    • 한국조명전기설비학회 2007년도 춘계학술대회 논문집
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    • pp.385-388
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    • 2007
  • In this paper approves AC high voltage by experimental GIS(Gas Insulated Switchgear) chamber and AC 300[kV] power source to study breakdown characteristics by pressure(P) change and change of electrode distance(d) at AC high voltage of Imitation Air(I-Air, $N_2$ : $O_2$ = 79[%] : 21[%]) to alternate $SF_6$ and achieved research. Gave P change of I-Air to study I-Air's breakdown characteristics using non-uniform fields(Needle--Plane electrode) and studied relations breakdown voltage ($V_B$) by each P different d.

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