한국정보디스플레이학회:학술대회논문집

한국정보디스플레이학회 (The Korean Infomation Display Society)
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Study on the n+ etching process in TFT-LCD Fabrication for Mo/Al/Mo Data Line

  • Choe, Hee-Hwan (Process Development Team, LCD R&D Center, LCD Business, Samsung Electronics) ;
  • Kim, Sang-Gab (Process Development Team, LCD R&D Center, LCD Business, Samsung Electronics) ;
  • Lim, Soon-Kwon (Process Development Team, LCD R&D Center, LCD Business, Samsung Electronics)
  • 발행 : 2004.08.23
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초록

n+ etching process is investigated in the fabrication of TFF-LCD using low resistance data line of Mo/Al/Mo. Problems of consumption of upper Mo layer and contamination of channel area are resolved. Either of HCl or $Cl_2$ can be selected as a main etchant gas, and either of $SF_6$ or $CF_4$ can be selected as an additive. Plasma treatment after n+ etching process can reduce the off-current high problem.

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