• 제목/요약/키워드: SEMI F47

검색결과 16건 처리시간 0.027초

SEMI F47을 만족하는 10kW급 3상 전압 새그 보상기 개발 (Development of Three Phase 10kW Voltage Sag Compensator)

  • 채승우;조현식;이일용;공세일;한병문;차한주
    • 전력전자학회논문지
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    • 제17권3호
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    • pp.198-204
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    • 2012
  • 3-Phase voltage sag compensator protects a critical load from grid sags. The paper presents an algorithm and design of 3-phase voltage compensator. Compensator algorithm consists of a 3-phase voltage sag detection, thyrister commutation method and inverter output voltage control. The compensator satisfies SEMI F47 standard and 10kW 3-phase voltage sag compensator prototype is assembled. Validity of the proposed compensator is verified by simulation and experiment.

ON SEMI-ARMENDARIZ MATRIX RINGS

  • KOZLOWSKI, KAMIL;MAZUREK, RYSZARD
    • 대한수학회지
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    • 제52권4호
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    • pp.781-795
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    • 2015
  • Given a positive integer n, a ring R is said to be n-semi-Armendariz if whenever $f^n=0$ for a polynomial f in one indeterminate over R, then the product (possibly with repetitions) of any n coefficients of f is equal to zero. A ring R is said to be semi-Armendariz if R is n-semi-Armendariz for every positive integer n. Semi-Armendariz rings are a generalization of Armendariz rings. We characterize when certain important matrix rings are n-semi-Armendariz, generalizing some results of Jeon, Lee and Ryu from their paper (J. Korean Math. Soc. 47 (2010), 719-733), and we answer a problem left open in that paper.

SEMI F47을 만족하는 10kW급 3상 전압 새그 보상기 개발 (Development of three phase 10kW voltage sag compensator)

  • 채승우;차한주
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2011년도 전력전자학술대회
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    • pp.404-405
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    • 2011
  • 본 논문에서는 SEMI F47을 만족하며 3상 계통에 적용 가능한 전압 새그 보상기를 구성하는 알고리즘과 설계과정을 기술하였다. 제안된 알고리즘을 검증하기 위해 PSIM 시뮬레이션 프로그램을 통해 시뮬레이션 하였고, 시제품 제작을 통해 성능을 검증 하였다.

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MULTIPLICATION MODULES WHOSE ENDOMORPHISM RINGS ARE INTEGRAL DOMAINS

  • Lee, Sang-Cheol
    • 대한수학회보
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    • 제47권5호
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    • pp.1053-1066
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    • 2010
  • In this paper, several properties of endomorphism rings of modules are investigated. A multiplication module M over a commutative ring R induces a commutative ring $M^*$ of endomorphisms of M and hence the relation between the prime (maximal) submodules of M and the prime (maximal) ideals of $M^*$ can be found. In particular, two classes of ideals of $M^*$ are discussed in this paper: one is of the form $G_{M^*}\;(M,\;N)\;=\;\{f\;{\in}\;M^*\;|\;f(M)\;{\subseteq}\;N\}$ and the other is of the form $G_{M^*}\;(N,\;0)\;=\;\{f\;{\in}\;M^*\;|\;f(N)\;=\;0\}$ for a submodule N of M.

계통조건(系統條件) 변경(變更)에 따른 고장시(故障時) 부하측(負荷側)의 순간전압강하(瞬間電壓降下) 영향분석(影響分析) (Analysis of voltage sag effect at load side during fault according to change of power system condition)

  • 윤기섭;백승도;구성완;이종수;이홍기
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2002년도 하계학술대회 논문집 A
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    • pp.156-158
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    • 2002
  • In this paper, we analyze about voltage sag effect at load side during fault according to change of power system condition. through the case studies, we find that there is no close connection between substation bus transfer and voltage sag during fault. however, we find that other feeder connecting with the faulted transmission is directly affected by fault type and magnitude, therefore, the main subject can be divided into the utility and customer side countermeasures, utilities concentrate their effort to prevent the faults and to modify the fault clearing practice in power system. however, the faults in power system can never be completely eliminated. therefore, customer side solutions usually involve the power conditioning equipment for sensitive loads aiso, we investigate that the several methods to reduce the number and severity of voltage sag and to dull the sensitivity of equipment for voltage sag have developed. moreover, about SEMI, the industry association for the semiconductor two voltage sag immunity standards.(SEMI F47, SEMI F42) The simulation is accomplished by PSS/E 26.

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S-closed 공간(空間)과 RC 수렴(收斂)에 관하여 (A Note on S-closed Space and RC-convergence.)

  • 한천호
    • 산업기술연구
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    • 제5권
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    • pp.47-49
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    • 1985
  • Semi-open을 기초로 하여 만들어진 S-closed 공간의 일반적인 성질을 살펴보고 S-closed 공간과 (maximum) filterbase와의 관계를 조사하였다. 이를 바탕으로 regular closed된 cover C, regular open set인 족(族) C, rc-accumulation, (maximum) filterbase에서의 관계(關係)를 살펴 보았다. Mapping theory에서 almost-open almost-continuous map f가 almost continuous되는 것을 보였다.

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Characterization of SOI Wafers Fabricated by a Modified Direct Bonding Technology

  • Kim, E.D.;Kim, S.C.;Park, J.M.;Kim, N.K.;Kostina, L.S.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.47-51
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    • 2000
  • A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

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wx-Carrier Technique를 이용한 맑은 쌀의 선발에 관한 연구 (Studies on the Selection Efficiency for Clear Rice in the wx - carrier technique.)

  • 허문회;김홍열
    • 한국작물학회지
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    • 제29권1호
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    • pp.1-10
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    • 1984
  • 통일형 찰벼를 매개체로 이용하는 육종 체계(wx-carrier technique)에서 맑은 쌀의 선발에 관한 효율성을 검토하기 위하여 기원이 다른 6개의 찰벼를 1회친으로 하고 2개의 통일형 계통 IR667과 IR1317을 반복친으로 하는 Backcross로 12개의 찰벼 계통을 육성해서 이들에다 맑은 쌀 모본 IR24, 수원287호 및 수원294호를 교배하여 그 F$_3$종자에 주당 평균 맑은 쌀의 분리 정도와 변이를 검토하였다. 그 결과를 요약하면 다음과 같다. 1. 찰벼 육성 계통들의 맑은 쌀 출현율은 주당 평균 3.7~78.9%까지로써 그 정도는 찰벼 계통 육성에 사용된 반복친별로 달라 IR677 조합에서보다 IR1317조합에서 높게 나타났다. 반복친의 맑은 쌀 비율은 IR667이 5.6%, IR1317이 47.6%이었으며. 맑은 쌀 메 모본들은 수원287호 83.7%, IR24 80.5% 그리고 수원294호가 73.5%이었다. 2. 메 회복 교배 조합 F$_3$종자에서 맑은 쌀의 분리는 IR24와의 조합에서는 16.7~73.9%, 수원294호와의 조합에서는 21.9~42.8% 그리고 수원287호와의 조합에서는 10.6~26.9%로 IR24 조합에서 가장 많이 분리되었다. 3. 동일한 찰벼 계통을 서로 다른 메벼 품종 수원287호 및 수원294호와 교배된 조합에 있어서의 맑은 쌀의 분리는 조합간에 유의한 정의 상관이 인정되었다. 4. 동일한 메 모본을 찰벼의 기원만 다르고 반복친이나 교배 회수는 동등한 찰벼 계통과 교배한 조합의 맑은 쌀의 분리에 있어서 조합간에 유의한 차이를 나타내었는데 IR1317이 반복친으로 쓰인 경우는 맑은 쌀의 분리가 많고, IR667이 반복친으로 쓰인 경우는 맑은 쌀의 분리가 적었다. 5. Homo메와 Hetero메의 맑은 쌀의 분리 비율은 개체간에 일정한 경향이 없었다. 6. 통일형 찰벼를 매개체로 하는 육종 체계에서는 적절한 모본을 선택함으로써 맑은 쌀의 선발 비율을 높일 수 있을 것으로 추론하였다.

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Building a Sentential Model for Automatic Prosody Evaluation

  • 윤규철
    • 말소리와 음성과학
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    • 제1권4호
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    • pp.47-59
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    • 2009
  • The purpose of this paper is to propose an automatic evaluation technique for the prosodic aspect of an English sentence uttered by Korean speakers learning English. The underlying hypothesis is that the consistency of the manual prosody scoring is reflected in an imaginary space of prosody evaluation model constructed out of the three physical properties of the prosody considered in this paper, namely: the fundamental frequency (F0) contour, the intensity contour, and the segmental durations. The evaluation proceeds first by building a prosody evaluation model for the sentence. For the creation of the model, utterances from native speakers of English and Korean learners for the target sentence are manually scored by either native teachers of English or Korean phoneticians in terms of their prosody. Multiple native utterances from the manual scoring are selected as the "model" native utterances against which all the other Korean learners' utterances as well as the model utterances themselves can be semi-automatically evaluated by comparison in terms of the three prosodic aspects [7]. Each learner utterance, when compared to the multiple model native utterances, produces multiple coordinates in a three-dimensional space of prosody evaluation, each axis of which corresponds to the three prosodic aspects. The 3D coordinates from all the comparisons form a prosody evaluation model for the particular sentence and the associated manual scores can display regions of particular scores. The model can then be used as a predictive model against which other Korean utterances of the target sentence can be evaluated. The model from a Korean phonetician appears to support the hypothesis.

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낸드 플래시 메모리와 PSRAM을 이용한 비동기용 불휘발성 메모리 모듈 설계 (Design of Asynchronous Non-Volatile Memory Module Using NAND Flash Memory and PSRAM)

  • 김태현;양오;연준상
    • 반도체디스플레이기술학회지
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    • 제19권3호
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    • pp.118-123
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    • 2020
  • In this paper, the design method of asynchronous nonvolatile memory module that can efficiently process and store large amounts of data without loss when the power turned off is proposed and implemented. PSRAM, which takes advantage of DRAM and SRAM, was used for data processing, and NAND flash memory was used for data storage and backup. The problem of a lot of signal interference due to the characteristics of memory devices was solved through PCB design using high-density integration technology. In addition, a boost circuit using the super capacitor of 0.47F was designed to supply sufficient power to the system during the time to back up data when the power is off. As a result, an asynchronous nonvolatile memory module was designed and implemented that guarantees reliability and stability and can semi-permanently store data for about 10 years. The proposed method solved the problem of frequent data loss in industrial sites and presented the possibility of commercialization by providing convenience to users and managers.