Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2000.04b
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- Pages.47-51
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- 2000
Characterization of SOI Wafers Fabricated by a Modified Direct Bonding Technology
- Kim, E.D. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
- Kim, S.C. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
- Park, J.M. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
- Kim, N.K. (Power Semicon. Res. Group, Korea Electrotechnology Research Institute) ;
- Kostina, L.S. (A. F. Ioffe Physico-Technical Institute, Russian Academy of Science)
- Published : 2000.04.28
Abstract
A modified direct bonding technique employing a wet chemical deposition of