• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.221-226
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• 2008

A new two dimensional (2-D) analytical model for the Threshold Voltage on dual material surrounding gate (DMSG) MOSFETs is presented in this paper. The parabolic approximation technique is used to solve the 2-D Poisson equation with suitable boundary conditions. The simple and accurate analytical expression for the threshold voltage and sub-threshold swing is derived. It is seen that short channel effects (SCEs) in this structure is suppressed because of the perceivable step in the surface potential which screens the drain potential. We demonstrate that the proposed model exhibits significantly reduced SCEs, thus make it a more reliable device configuration for high speed wireless communication than the conventional single material surrounding gate (SMSG) MOSFETs.

• YAKHAK HOEJI
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• v.39 no.1
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• pp.94-101
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• 1995

In order to evaluate the suppressive effects of galangin on the DNA damage induced by N-methyl-N-nitrosourea(MNU), in vitro sister chromatid exchange(SCE) test using Chinese Hamster ovary(CHO) cells was performed. Also the determinations of [$^{3}$H] MNU-induced total DNA binding and methylated DNA were performed to find out the mechanism of action by galangin. MNU-induced SCEs were significantly decreased by simultaneous and pretreatment of galangin when S-9 mix was added only. In post-treatment, however, the MNU-induced SCEs were not decreased when S-9 mix was added or not. [$^{3}$H] MNU-induced total DNA binding was significantly inhibited by the treatment of galangin in calf thymus DNA and CHO cells. HPLC analysis of DNA hydrolysates shows that galangin caused a dose-dependant decrease in calf thymus DNA, but not significant decrease in CHO cells. These results suggest that the inhibition of galangin on the MNU-induced SCEs is due to the decrease of DNA binding and methylation with MNU. Therefore, galangin may be useful as a chemopreventive agent of alkylating agents.

• Proceedings of the Zoological Society Korea Conference
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• 1997.04a
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• pp.81.1-81
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• 1997

No Abstract, See Full Text

• Journal of Environmental Health Sciences
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• v.21 no.3
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• pp.67-76
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• 1995

The frequencies of chromosome aberrations and sister chromatid-exchanges in peripheral blood lymphocyte of 44 nurses handling anticancer drugs were compared with those in 44 age-match controls. The frequencies of dicentric chrdmosome were $2.4\times 10^{-3}$ in the exposed and $0.5\times 10^{-3}$ in the control. The frequencies of sister cromatid exchanges in the exposed were slightly higher (5.68 SCEs/cell) than those in the control (5.04 SCEs/cell). The frequencies of chromosome aberrations and sister cromatid exchanges were not associated with duration of drug handling and types of anticancer drugs, but associated with use of safety cover.

• Journal of information and communication convergence engineering
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• v.9 no.6
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• pp.738-742
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• 2011

This paper has studied drain induced barrier lowering(DIBL) for Double Gate MOSFET(DGMOSFET) using analytical potential model. Two dimensional analytical potential model has been presented for symmetrical DGMOSFETs with process parameters. DIBL is very important short channel effects(SCEs) for nano structures since drain voltage has influenced on source potential distribution due to reduction of channel length. DIBL has to be small with decrease of channel length, but it increases with decrease of channel length due to SCEs. This potential model is used to obtain the change of DIBL for DGMOSFET correlated to channel doping profiles. Also device parameters including channel length, channel thickness, gate oxide thickness and doping intensity have been used to analyze DIBL.

• Journal of information and communication convergence engineering
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• v.9 no.3
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• pp.310-314
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• 2011

This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.647-654
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• 2013

The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.

• Nutritional Sciences
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• v.5 no.3
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• pp.134-145
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• 2002

No Abstract, See Full-text

• Environmental Mutagens and Carcinogens
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• v.16 no.1
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• pp.19-23
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• 1996

This study was performed by the sister chromatid exchanges (SCEs) and micronuclei (MN) assays to investigate the adaptive response to ultraviolet light (UV) or ethyl methanesulfonate (EMS) in Chinese hamster ovary (CHO) and Sarcoma 180 (S180) cells. The pretreatment with 1 J/m$^2$ UV or 2 mM EMS decreased the frequency of SCEs induced by the treatment with 5 J/m$^2$ UV or 8 mM EMS in CHO cells. The pretreatment with UV (1 or 2 J/m$^2$) or EMS (1, 2 or 3 mM) did not affect the SCEs induced by the treatment with 7 J/m$^2$ UV or 10 mM EMS in S180 cells. On the other hand, the pretreatment with 1 J/m$^2$ UV or 2 mM EMS decreased the frequency of MN induced by the treatment with 5 J/m$^2$ UV or 8 mM EMS in CHO cells. The pretreatment with UV (1 or 2 J/m$^2$) or EMS (1, 2 or 3 mM) did not affect the frequency of MN induced by the treatment with 7 J/m$^2$ UV or 10 mM EMS in S180 cells. It is suggested that there are adaptive responses at the level of chromosome and micronuclei to UV and EMS in CHO cells.

• Journal of Preventive Medicine and Public Health
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• v.20 no.1 s.21
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• pp.1-9
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• 1987

Sister chromatid exchanges (SCEs) observed by means of bromodeoxyuridine substitution and fluorescence plus Giemsa (FPG) technique were proposed as a sensitive and quantitative assay for mutagenicity and cytotoxicity in short-term cultures of phytohaemagglutinin (PHA)-stimulated human lymphocytes. Therefore, this study was carried out to investigate the relation between anticancer agents and cytotoxic effects. Chromosomal analysis was performed on metaphase cells that had divided one, two, or three or more times after treatment for SCEs, mitotic indices (MI) and cell cycle kinetics by FPG technique. The results indicate that anticancer agents led to a dose dependent increase in SCE frequency except methotrexate. But, highly inhibited mitotic indices and delayed cell cycle kinetics were observed except for cyclophosphamide. The author suggest that the difference of SCE frequency is due to the differences in the cytotoxic action of anticancer agents, but although the induction of SCEs has a correlation with cell cycle delay, in some cases the induction of SCEs is not always related to cell cycle delay because of different cytotoxic action of anticancer agents.