• Bulletin of the Society of Naval Architects of Korea
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• v.38 no.1
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• pp.47-53
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• 2001

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.27-30
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• 2015

SiC based Schottky barrier diodes were prepared by using the facing targets sputtering method. In this research, 4H-SiC polytypes of SiC were adopted and Molybdenum, Titanium was employed as the Schottky metal of the metal-semiconductor contacts. Both structures showed the rectifying nature in their forward and reverse J-V characteristic curve and the ideality factors calculated from these plots that were close to unity were represented the nearly ideal behavior. Difference of Schottky barrier height between prepared devices was also corresponding with the electrical characteristics of themselves. Therefore the suitability of the facing targets sputtering method for fabrication of Schottky diodes could be suggested from these results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.21-22
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AlGaN/GaN SBD showed high forward current of 88.61 mA at 3.5 V while that of the conventional device was 14.1 mA at the same condition.

• Journal of Power Electronics
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• v.13 no.4
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• pp.584-591
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• 2013

In this paper, a hybrid booster power module with Si IGBT and Silicon Carbide (SiC) Schottky Barrier Diode (SBDs) is presented. The switching characteristics of the hybrid booster module are compared with commercial Silicon IGBT/Si PIN diode based modules. We applied the booster power module into a non-isolated on board vehicle charger with a simple buck-booster topology. The performances of the on-vehicle charger are analyzed and measured with different power modules. The test data is measured in the same system, at the same points of operation, using the conventional Si and hybrid Si/SiC power modules. The measured power conversion efficiency of the proposed on-vehicle charger is 96.4 % with the SiC SBD based hybrid booster module. The conversion efficiency gain of 1.4 % is realizable by replacing the Si-based booster module with the Si IGBT/SiC SBD hybrid boost module in the 6.6 kW on-vehicle chargers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.751-755
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AIGaN/GaN SBD showed high forward current of 88.61 mA at 3,5 V while that of the conventional device was 14.1 mA at the same condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.30-33
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• 1999

본 연구에서는 Pt/f4-SiC Schottky barrier diodes(SBDs)의 소자 성능향상과 미세구조와의 상관관계를 규명하였다. 다른 열처리 온도구간에 따른 금속/SiC 계면의 미세구조 평가는 X-ray scattering법을 사용하여 분석하였다. 소자의 역 방향 특성은 열처리 온도가 증가함에 따라 저하되었다. As-deposited와 $850^{\circ}C$ 온도에서 열처리된 소자의 최대 항복전압은 각각 1300 V와 626 V 이었다. 그러나, 소자의 순방향 특성은 열처리 온도가 증가함에 따라 향상되었다. X-ray scattering법으로 >$650^{\circ}C$ 이상의 열처리 온도에서는 Pt/SiC 계면에서 Pt-silicides가 형성되었고, 이러한 Silicides의 형성이 Pt/SiC 계면의 평활도를 증가시킨 원인이 됨을 보였다. SBDs의 순방향 특성은 열처리 과정동안 Pt/SiC 계면에서 형성된 silicides의 결정성에 강하게 의존함을 알 수 있었다.

• Journal of Scientific & Technological Knowledge Infrastructure
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• s.2
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• pp.36-40
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• 2000

SDB는 중국과학원의 전산정보센터(CNC-Computer Network information Center)을 포함한 22개 기관, 200명 이상의 연구원이 참여하고 있다. 전산망정보센터를 제외한 21개 기관에서 작성하는 전문 데이터베이스는 130개로 560GB에 이른다.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Proceedings of the Korea Information Processing Society Conference
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• 2017.04a
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• pp.661-664
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• 2017

Recently, during disasters occurrence, dealing with emergencies has been handled well by the early transmission of disaster relating notifications on social media networks (e.g., Twitter or Facebook). Intuitively, with their characteristics (e.g., real-time, mobility) and big communities whose users could be regarded as volunteers, social networks are proved to be a crucial role for disasters response. However, the amount of data transmitted during disasters is an obstacle for filtering informative messages; because the messages are diversity, large and very noise. This large volume of data could be seen as Social Big Data (SBD). In this paper, we proposed a big data platform for collecting and analyzing disasters' data from SBD. Firstly, we designed a collecting module; which could rapidly extract disasters' information from the Twitter; by big data frameworks supporting streaming data on distributed system; such as Kafka and Spark. Secondly, we developed an analyzing module which learned from SBD to distinguish the useful information from the irrelevant one. Finally, we also designed a real-time visualization on the web interface for displaying the results of analysis phase. To show the viability of our platform, we conducted experiments of the collecting and analyzing phases in 10 days for both real-time and historical tweets, which were about disasters happened in South Korea. The results prove that our big data platform could be applied to disaster information based systems, by providing a huge relevant data; which can be used for inferring affected regions and victims in disaster situations, from 21.000 collected tweets.

• Transactions on Electrical and Electronic Materials
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• v.18 no.4
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• pp.199-202
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• 2017

Silicon carbide (SiC) is being spotlighted as a next-generation power semiconductor material owing to the characteristic limitations of the existing silicon materials. SiC has a wider band gap, higher breakdown voltage, higher thermal conductivity, and higher saturation electron mobility than those of Si. When using this material to implement Schottky barrier diode (SBD) devices, SBD-state operation loss and switching loss can be greatly reduced as compared to that of traditional Si. However, actual SiC SBDs exhibit a lower dielectric breakdown voltage than the theoretical breakdown voltage that causes the electric field concentration, a phenomenon that occurs on the edge of the contact surface as in conventional power semiconductor devices. Therefore in order to obtain a high breakdown voltage, it is necessary to distribute the electric field concentration using the edge termination structure. In this paper, we designed an edge termination structure using a field plate structure through oxide etch angle control, and optimized the structure to obtain a high breakdown voltage. We designed the edge termination structure for a 650 V breakdown voltage using Sentaurus Workbench provided by IDEC. We conducted field plate experiments. under the following conditions: $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, $60^{\circ}$, and $75^{\circ}$. The experimental results indicated that the oxide etch angle was $45^{\circ}$ when the breakdown voltage characteristics of the SiC SBD were optimized and a breakdown voltage of 681 V was obtained.