• Food Science of Animal Resources
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• v.31 no.3
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• pp.428-435
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• 2011

This study was conducted to investigate the effect of immersion treatment using lactic acid (LA) and sodium benzoate (SB) on the physicochemical quality and freshness of spent hen breast meats. A total of 135 spent hen breast meats were subjected to 9 different treatments using various concentrations of LA and/or SB in sterile DW. The 9 treatment groups were as follows: Control, sterile DW without LA or SB; T1, 1% LA; T2, 2% LA; T3, 4% LA; T4, 1% LA and 0.1% SB; T5, 2% LA and 0.1% SB; T6 2% LA and 0.2% SB; T7, 2% LA and 0.4% SB; T8, 4% LA and 0.2% SB, respectively. All groups were kept at 4oC for 15 d. The microbial counts in the control group gradually increased during storage, but those for the treated groups were significantly lower than the control or were not detected. The pH values of the control were significantly higher than those of the treated groups (p<0.05). In the color measurements, the lightness ($L^*$) and yellowness ($b^*$) values increased during storage and the redness ($a^*$) values decreased (p<0.05). The K-value and volatile basic nitrogen of the treated groups were significantly lower than those of the control group (p<0.05). Overall, the combined results of this study indicate that LA and SB could be used as favorable preservatives for spent hen breast meats to extend their shelf-life during refrigerated storage.

• Journal of the Korean Ceramic Society
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• v.31 no.2
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• pp.185-193
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• 1994

Effect of Sb2O3 addition on microstructure and the PTCR characteristic was investigated. The range of the Sb2O3 content and the sintering temperature showing semiconducting and PTCR characteristic, were 0.05~0.125 mol%, and over 130$0^{\circ}C$, respectively. We found that PTCR characteristic, that is, room-temperature resistivity and specific resistivity ration were dependent on the microstructure.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.6
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• pp.31-37
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• 1993

InSb thin films were fabricated by zone melting recrystallization of In/Sb multilayered thin films prepared by sequential evaporation. Unreacted metal phase or dispersed metal precipitates lowered the electron mobility and the electron mobility increased with development of (111) prefered orientation. Properties of the film could be controlled by changing mzximum temperature and scanning speed, and the electron mobility as high as 12, 000 cm $^2$/Vsec could be obtained under the optimized conditions.

• Imaging Science in Dentistry
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• v.48 no.4
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• pp.277-281
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• 2018

Purpose: This study was performed to investigate the relationship between sleep bruxism(SB) and pulpal calcifications in young women. Materials and Methods: A total of 100 female participants between 20 and 31 years of age who were referred to our radiology clinic for a dental check-up, including 59 SB and 41 non-SB patients, were sampled for the analysis. SB was diagnosed based on the American Academy of Sleep Medicine criteria. All teeth were evaluated on digital panoramic radiographs to detect pulpal calcifications, except third molars, teeth with root canal treatment, and teeth with root resorption. Binary logistic regression analysis was used to determine the risk factors for pulpal calcifications. The Spearman correlation coefficient was applied and the Pearson chi-square test was used for categorical variables. To test intra-examiner reproducibility, Cohen kappa analysis was applied. P values <.05 were considered to indicate statistical significance. Results: A total of 2800 teeth were evaluated (1652 teeth from SB patients and 1148 from non-SB patients), and 61% of patients had at least 1 dental pulpal calcification. No statistically significant relationship was found between SB and pulpal calcifications (P>0.05). In SB patients, the total number of pulpal calcifications was 129, while in non-SB patients, it was 84. Binary logistic analysis showed that SB was not a risk factor for the presence of pulpal calcifications(odds ratio, 1.19; 95% CI, 0.52-2.69, P>.05). Conclusion: No relationship was found between SB and pulpal calcifications.

• Korean Journal of Materials Research
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• v.31 no.8
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• pp.445-449
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• 2021

Zintl compound Mg₃Sb₂ is a promising candidate for efficient thermoelectric material due to its small band gap energy and characteristic electron-crystal phonon-glass behavior. Furthermore, this compound enables fine tuning of carrier concentration via chemical doping for optimizing thermoelectric performance. In this study, nominal compositions of Mg_3.8Sb_2-xTe_x (0 ≤ x ≤ 0.03) are synthesized through controlled melting and subsequent vacuum hot pressing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are carried out to investigate phase development and surface morphology during the process. It should be noted that 16 at. % of excessive Mg must be added to the system to compensate for the loss of Mg during melting process. Herein, thermoelectric properties such as Seebeck coefficient, electrical conductivity, and thermal conductivity are evaluated from low to high temperature regimes. The results show that Te substitution at Sb sites effectively tunes the majority carriers from holes to electrons, resulting in a transition from p to n-type. At 873 K, a peak ZT value of 0.27 is found for the specimen Mg_3.8Sb_1.99Te_0.01, indicating an improved ZT value over the intrinsic value.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.640-644
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• 1998

We have fabricated Sb/SiC(4H) Schottky barrier diode (SBD) of which characteristics compared with that of Ti/SiC(4H) SBD. The donor concentration of the n-type SiC(4H) obtained by capacitance-voltage (C-V) measurement was about $2.5{\times}10 ^{17}{\textrm}cm^{-3}$. The ideality factors of 1.31 was obtained from the slope of forward current-voltage (I-V) characteristics of Sb/SiC(4H) SBD at low current density. The breakdown field of Sb/SiC(4H) SBD under the reverse bias voltage was about $4.4{\times}10^2V$/cm. The built-in potential and the Schottky barrier height (SBH) of Sb/SiC(4H) SBD were 1.70V and 1.82V, respectively, which were determined by the analysis of C-V characteristics. The Sb/SiC(4H) SBH of 1.82V was higher than Ti/SiC(4H) SBH of 0.91V. However, the current density and reverse breakdown field of Sb/SiC(4H) were low as compared with those of Ti/SiC(4H). The Sb/SiC(4H), as well as the Ti/SiC(4H), can be utilized as the Shottky barrier contact for the high-power electronic device.

• Bulletin of the Korean Chemical Society
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• v.31 no.1
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• pp.162-167
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• 2010

We investigated the adsorption and desorption characteristics of benzene molecules on $Si(001)-2{\times}n$ surfaces using a variable-low temperature scanning tunneling microscopy. When benzene was adsorbed on a $Si(001)-2{\times}n$ surface at a low coverage, five distinct adsorption configurations were found: tight-binding (TB), standard-butterfly (SB), twisted-bridge, diagonal-bridge, and pedestal. The TB and SB configurations were the most dominant ones and could be reversibly interconverted, diffused, and desorbed by applying an electric field between the tip and the surface. The population ratios of the TB and SB configurations were affected by the benzene coverage: at high coverage, the population ratio of SB increased over that of TB, which was favored at low coverage. The desorption yield decreased with increasing benzene coverage and/or density of vacancy defect. These results suggest that the interaction between the benzene molecules is important at a high coverage, and that the vacancy defects modify the adsorption and desorption energies of the benzene molecules on Si(001) surface.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.7 no.2
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• pp.59-65
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• 1982

In this paper, the CdS single crystal, which was grown as piper-polish method, was Ion-bombarded with Sb and In, and the thermally stimulated current of the spot that was Ionbombarded was measured. In the sample which was individually bombarded by Sb and In, the over-lapping peak was found, this over lapping peak was separated, by the method of thermal cleaning, showing the trap levels of 0.25(eV) and 0.31(eV) at the temperature of 147(K) and 181(K). While the spot is being cooled down and excited with photolight at the same time, the trap level 0.25(eV) disappeared and the new trap level of 0.85(eV) appeared. It can be said that the better photo-conductive crystals, the T.S.C is better measured.

• Corrosion Science and Technology
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• v.18 no.6
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• pp.243-252
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• 2019

The pitting corrosion and inhibition studies of AZ31B magnesium alloy were investigated in the alkaline solution (pH12) with chloride and inhibitors. The corrosion behavior of passive film with/without Cl^- in the alkaline electrolyte were conducted by polarization curve and immersion tests in the presence of various additives (inhibitors) to clarify the inhibition efficiency of pitting corrosion at higher potential region. Critical concentration of pitting corrosion for Mg alloy was evaluated with 0.005 M NaCl in 0.01 M NaOH on the anodic polarization behavior. Critical pitting of AZ31B Mg alloy in 0.01 M NaOH is a function of chlorides; E_pit = - 1.36 - 0.2 log [Cl^-]. When the Sodium Benzoate (SB) was only used as an inhibitor, a few metastable pits developed on the Mg surface by an immersion test despite no pitting corrosion on the polarization curve meaning that adsorption of SB on the surface is insufficient protection from pitting corrosion in the presence of chloride. The role of SB and Sodium Dodecylbenzenesulfonate (SDBS) inhibitors for the Mg alloy surface in the presence of chloride was suppressed from pitting corrosion to co-adsorb on the Mg alloy surface with strong formation of passive film preventing pitting corrosion.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.28 no.1
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• pp.31-40
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• 2004

Direct numerical simulations were performed to analyze the effects of time-periodical blowing through a spanwise slot on a turbulent boundary layer. The blowing velocity was varied in a cyclic manner from 0 to 2A$^{+}$(A$^{+}$ =0.25, 0.50 and 1.00) at a fixed blowing frequency of f$^{+}$=0.017. The effect of steady blowing (SB) was also examined, and the SB results were compared with those for periodic blowing (PB). PB reduced the skin friction near the slot, although to a slightly lesser extent than SB. PB was found to generate a spanwise vortical structure in the downstream of the slot. This vortex generates a reverse flow near the wall, thereby reducing the wall shear stress. The wall-normal and spanwise turbulence intensities under PB are increased as compared to those under SB, whereas the streamwise turbulent intensity under PB is weaker than that under SB. PB enhances more energy redistribution than SB. The periodic response of the streamwise turbulence intensity to PB is propagated to a lesser extent than that of the other components of the turbulence intensities and the Reynolds shear stress.