• Title/Summary/Keyword: SB Factor

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A Study on the Safety and Comfort of Pedestrians according to the Type of Sidewalk Pavement (보도포장의 종류에 따른 보행자의 안전성 및 쾌적감에 대한 연구)

  • Choi, Jae Jin
    • Journal of the Korean Society of Safety
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    • v.30 no.1
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    • pp.66-71
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    • 2015
  • Safety, resilience and comfort of pedestrian were assessed by the British Pendulum Test and SB/GB factor test at 8 kinds of sidewalk pavement. Sidewalk paving materials were normal concrete, porous concrete, concrete block, soil concrete, asphalt, rubber chip/resin mixture, wood chip/resin mixture and floor tile. In addition, a survey was conducted to investigate the perception of pedestrians on the sidewalk paving material. As a result, while the skid resistance value was measured in the most 60BPN above, the floor tile showed a low value of about 30BPN. The ratios of SB factor to GB factor of the elastic pavements(rubber/resin mixture and wood chip/resin mixture) appeared to be relatively large when compared with those of the conventional sidewalks. The survey showed that respondents perceived as more safe and comfortable elastic pavements compared to conventional pavements. Approximately 50% of respondents answered that hardened soil pavement was the most environmentally friendly.

Fabrication Process and Sensing Characteristics of the In-plane Thermoelectric Sensor Consisting of the Evaporated p-type Sb-Te and n-type Bi-Te Thin Films (n형 Bi-Te와 p형 Sb-Te 증착박막으로 구성된 in-plane 열전센서의 형성공정 및 감지특성)

  • Bae, Jae-Man;Kim, Min-Young;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.19 no.1
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    • pp.33-38
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    • 2012
  • An in-plane thermoelectric sensor was processed on a glass substrate by evaporation of the n-type Bi-Te and p-type Sb-Te thin films, and its sensing characteristics were evaluated. The n-type Bi-Te thins film used to fabricate the inplane sensor exhibited a Seebeck coefficient of -165 ${\mu}V$/K and a power factor of $80{\times}10^{-4}W/K^2-m$. The p-type Sb-Te thin film used to fabricate the in-plane sensor exhibited a Seebeck coefficient of 142 ${\mu}V$/K and a power factor of $51.7{\times}10^{-4}W/K^2-m$. The in-plane thermoelectric sensor consisting of 15 pairs of the n-type Bi-Te and the p-type Sb-Te evaporated thin films exhibited a sensitivity of 2.8 mV/K.

Thermolelectric Properties of p-type $Sb_{2-x}Bi_xTe_3$ grown by MOCVD (MOCVD법으로 성장된 p-형 $Sb_{2-x}Bi_xTe_3$ 박막의 열전특성)

  • Kim, Jeong-Hoon;Kwon, Sung-Do;Jung, Yong-Chul;Yoon, Seok-Jin;Ju, Byeong-Kwon;Kim, Jin-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.138-139
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    • 2006
  • Metal organic chemical vapor deposition has been investigated for growth of $Sb_{2-x}Bi_xTe_3$ films on (001) GaAs substrates using diisopropyltelluride, triethylantimony and trimethylbismuth as metal organic sources. The thermoelectric properties were measured at room temperature and include Seebeck coefficient, electrical conductivity and Hall effect. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor's composition ratio and deposition temperature. The thermoelectric Power factor($={\alpha}^2{\sigma}$) was calculated from theses properties. The best Power factor was $2.6\;{\times}\;10^{-3}W/mK^2$, given by grown $Sb_{1.6}Bi_{0.4}Te_3$ at $450^{\circ}C$. These materials could potentially be incorporated into advanced thermoelectric unicouples for a variety of power generation applications.

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Thermoelectric Characteristics of the p-type $(Bi,Sb)_2Te_3$ Nano-Bulk Hot-Pressed with Addition of $ZrO_2$ as Nano Inclusions ($ZrO_2$를 나노개재물로 첨가한 p형 $(Bi,Sb)_2Te_3$ 나노벌크 가압소결체의 열전특성)

  • Yeo, Y.H.;Kim, M.Y.;Oh, T.S.
    • Journal of the Microelectronics and Packaging Society
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    • v.17 no.3
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    • pp.51-57
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    • 2010
  • Thermoelectric properties of the p-type $(Bi,Sb)_2Te_3$, hot-pressed with the $(Bi,Sb)_2Te_3$ powders fabricated by melting/grinding method, were characterized with variation of the hot-pressing conditions. Thermoelectric characteristics of the hot-pressed $(Bi,Sb)_2Te_3$ were also analyzed with addition of $ZrO_2$ as nano inclusions. With increasing the hotpressing temperature from $350^{\circ}C$ to $550^{\circ}C$, Seebeck coefficient and electrical resistivity decreased from 275 ${\mu}V$/K to 230 ${\mu}V$/K and 6.68 $m{\Omega}$-cm to 1.86 $m{\Omega}$-cm, respectively. The power factor decreased with addition of $ZrO_2$ nano powders more than 1 vol%, implying that the optimum amount of $ZrO_2$ nano inclusions to get a maximum power factor would be less than 1 vol%.

Inhibitory Effect of an Urotensin II Receptor Antagonist on Proinflammatory Activation Induced by Urotensin II in Human Vascular Endothelial Cells

  • Park, Sung Lyea;Lee, Bo Kyung;Kim, Young-Ae;Lee, Byung Ho;Jung, Yi-Sook
    • Biomolecules & Therapeutics
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    • v.21 no.4
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    • pp.277-283
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    • 2013
  • In this study, we investigated the effects of a selective urotensin II (UII) receptor antagonist, SB-657510, on the inflmmatory response induced by UII in human umbilical vein endothelial cells (EA.hy926) and human monocytes (U937). UII induced inflammatory activation of endothelial cells through expression of proinflammatory cytokines (IL-$1{\beta}$ and IL-6), adhesion molecules (VCAM-1), and tissue factor (TF), which facilitates the adhesion of monocytes to EA.hy926 cells. Treatment with SB-657510 significantly inhibited UII-induced expression of IL-$1{\beta}$, IL-6, and VCAM-1 in EA.hy926 cells. Further, SB-657510 dramatically blocked the UII-induced increase in adhesion between U937 and EA.hy926 cells. In addition, SB-657510 remarkably reduced UII-induced expression of TF in EA.hy926 cells. Taken together, our results demonstrate that the UII antagonist SB-657510 decreases the progression of inflammation induced by UII in endothelial cells.

Crystallization behavior and thermoelectric properties of p-type $(Bi_{1-X}Sb_X)_2Te_3$ thin films prepared by magnerron sputtering (마그네트론 스퍼터링법으로 제조한 P형 $(Bi_{1-X}Sb_X)_2Te_3$ 박막의 결정성과 열전특성)

  • 연대중;오태성
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.353-359
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    • 2000
  • $(Bi_{0.15}Sb_{0.85})_2Te_3$ and $(Bi_{1-x}Sb_x)_2Te_3$ thermoelectric thin films were prepared by magnetron sputtering process, and their thermoelectric characteristics were investigated with variation of the sputtering condition and the $Sb_2Te_3$ content. The $(Bi_{0.15}Sb_{0.85})_2Te_3$ film, deposited by DC sputtering at $300^{\circ}C$ with rotating the Corning glass substrate at 10 rpm, was fully crystallized to $(Bi,Sb)_2Te_3$ phase with c-axis preferred orientation. This $(Bi_{0.15}Sb_{0.85})_2Te_3$ film exhibited the Seebeck coefficient of 185 $\mu$V/K which was higher than the values of other $(Bi_{0.15}Sb_{0.85})_2Te_3$ films fabricated with different sputtering conditions. With increasing the $Sb_2Te_3$ content, the Seebeck coefficient and electrical resistivity of p-type $(Bi_{1-x}Sb_x)_2Te_3$ (0.77$\leq$x$\leq$1.0) film were lowered. Among p-type $(Bi_{1-x}Sb_x)_2Te_3$ films, a maximum power factor of $0.79{\times}10^{-3}W/K^2-m$ was obtained at (Bi_{0.05}Sb_{0.95})_2Te_3$ composition..

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Effects of quercetin and coated sodium butyrate dietary supplementation in diquat-challenged pullets

  • Zhou, Ning;Tian, Yong;Liu, Wenchao;Tu, Bingjiang;Gu, Tiantian;Xu, Wenwu;Zou, Kang;Lu, Lizhi
    • Animal Bioscience
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    • v.35 no.9
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    • pp.1434-1443
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    • 2022
  • Objective: This study was designed to investigate the hypothesis that dietary quercetin (QUE) and coated sodium butyrate (SB) supplementation alleviate oxidative stress in the small intestine of diquat (DIQ)-challenged pullets. Methods: A total of 200 13-week-old pullets were divided into four groups: the control group (CON), the DIQ group, the QUE group, and the coated SB group, and injected intraperitoneally with either saline (CON) or diquat (DIQ, QUE, and SB) to induce oxidative stress on day 0. Results: On the first day, the malondialdehyde and superoxide dismutase (SOD) concentrations in the SB group were significantly different from those in the DIQ and QUE groups (p<0.05), and dietary supplementation with SB increased serum glutathione peroxidase (GSH-PX) levels compared with the DIQ group (p<0.05). Quercetin and SB increased the levels of CLAUDIN-1 and zonula occludens-1 (ZO-1) in the jejunum. On the tenth day of treatment, QUE attenuated the decrease in GSH-PX levels compared to those of the CON group (p<0.05), while SB increased SOD, GSH-PX, and total antioxidant capacity levels compared to those of the DIQ group. Nuclear factor erythroid 2-related factor 2 (NRF2) and heme oxygenase-1 (HO-1) mRNA levels in the QUE and SB groups increased (p<0.05) and CLAUDIN-1 mRNA levels in the QUE and SB groups were upregulated compared to those in the DIQ group ileum tissue. Conclusion: Supplementation of QUE and SB demonstrated the ability to relieve oxidative stress in pullets post DIQ-injection with a time-dependent manner and QUE and SB may be potential antioxidant additives for relieving oxidative stress and protecting the intestinal barrier of pullets.

The Phase-change Memory Characteristics of Ge1Se1Te2 Thin Films for Sb Photo Doping (Sb 광도핑에 의한 Ge1Se1Te2 박막의 상변화 메모리 특성)

  • Nam, Ki-Hyun;Kim, Jang-Han;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.5
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    • pp.329-333
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    • 2012
  • For phase transition method, good record sensitivity, low heat radiation, fast crystallization and hi-resolution are essential. Also, a retention time is very important part for phase-transition. In our past papers, we chose composition of $Ge_1Se_1Te_2$ material to use a Se factor which has good optical sensitivity than conventional Sb. Sb/Ge-Se-Te thin films are fabricated and irradiated with UV light source to investigate a reversible phase change by Sb-doped condition. Because of Sb atoms, the Sb inserted sample showed better performance than conventional one. We should note that this novel one showed another possibility for phase-change random access memory.

The Non-Linear Characteristics of ZnO Devices. (ZnO 소자의 비직선 특성)

  • Hong, Kyung-Jin;Chon, Kyung-Nam;Cho, Jae-Cheol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.05a
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    • pp.43-46
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    • 2001
  • The ZnO devices using semiconductor properties, to include $MnO_2$, $Y_2O_3$ and other material, was fabricated by $Sb_2O_3$ mol ratio from 1 to 4 [mol%]. The non-linearity factor was calculated by setting current to be $1[mA/cm^2]$ and $10[mA/cm^2]$. The spinel structure was fonned by $Sb_2O_3$ addition and it was depressed the ZnO grain formation. The grain growing was controlled by spinel structure that has improved the non-linearity factors. The breakdown voltage characteristics of semiconductor devices to increase with $Sb_2O_3$ was increased in voltage-current. The non-linearity value of ZnO semiconductor devices was 45 over.

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The Effect of ZnO Addition on the Electric Properties and Microstructure of $Pb(Mn_{1/3}Sb_{2/3})O_3-Pb(Zr_{0.52}Ti_{0.48})O_3$Ceramics ($Pb(Mn_{1/3}Sb_{2/3})O_3-Pb(Zr_{0.52}Ti_{0.48})O_3$계 세라믹스의 전기적 특성과 미세구조에 미치는 ZnO 첨가영향)

  • 김민재;최성철
    • Journal of the Korean Ceramic Society
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    • v.36 no.10
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    • pp.1108-1114
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    • 1999
  • Microstructure and electrical properties of ZnO-doped (0-5 mol%) 0.05 Pb(Mn1/3Sb2/3)O3-0.95 PZT ceramics were investigated. Sintering temperature was decreased to 100$0^{\circ}C$ due to eutetic reaction between PbO and ZnO. Grain-size increased up to adding 1mol% ZnO and then decreased. Compositions of grain and grain-boundary were investigated by WDS. Lattice parameter was decreased with ZnO addition. Density increased with ZnO addition and reached to the maximum of 7.84(g/cm2) at 2 mol% ZnO. The effect of ZnO on electrical properties of PMS-PZT was investigated. At 3mol% ZnO addition electromechanical coupling factor(kp) was about 50% and relative dielectric constant($\varepsilon$33/$\varepsilon$0) was 997 Mechanical quality factor(Qm) decreased with ZnO addition. Lattice parameters and tetragonality(c/a) were measured to investigate relationship between the electric properties and substitution of Zn2+. At 3 mol% ZnO tetragonality was maximiged at c/a=1.0035 Curie temperature (Tc) decreased slightly with ZnO addition.

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