• Title/Summary/Keyword: SB

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Influence of Bismuth and Antimony Additions on the Structures and Casting Properties of Lead-free Cu-Zn-Sn Bronze Castings (무연 Cu-Zn-Sn 청동의 조직과 주조성에 미치는 Bi 및 Sb 첨가의 영향)

  • Park, Heung-Il;Park, Sung-Ik;Kim, Sung-Gyu
    • Journal of Korea Foundry Society
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    • v.32 no.2
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    • pp.91-97
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    • 2012
  • The effects of Bi and Sb additions on the microstructures and casting properties in lead-free Cu-Zn-Sn broze were investigated. (1) When only Bi was added to the bronze, Bi was precipitated on the ${\delta}$ phase of ${\alpha}$ dendrite cell boundary. When Bi and Sb were added together, Bi was precipitated on the ${\delta}_A$ which was the Sb-rich area in the ${\delta}$ phase. (2) The addition of Sb accelerated the formation of ${\delta}$ phase, and when Sb, Bi and Pb were added, Bi and Pb were precipitated as mixed solution in the ${\delta}_A$ phase. (3) The combined addition of Sb and Bi resulted in the suppression of shrinkage due to the complementary effects of the mass feeding of ${\alpha}$-dendrite cluster covered with ${\delta}$ phase and sealing of micro-shrinkage in the ${\delta}$ phase by solidification expansion of Bi.

Stabilization and Antifungal Activity of Isolated Symbiotic Bacteria from Entomopathogenic Nematodes (곤충병원성 선충에서 분리한 공생세균의 안정화 및 항진균활성)

  • Kang, Dong-Hee;Kim, Hyo-Hyun;Nam, Uk-Ho;Kim, Hyun-Soo
    • KSBB Journal
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    • v.30 no.3
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    • pp.132-139
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    • 2015
  • In order to use the symbiotic bacteria from ethomophatogenic nematodes as a biological control agent for agriculture, the cultural condition for maintaining phase I and antifungal activity was investigated. Symbiotic bacteria (SB) 1 stain from nematodes were selected from the three strains isolated from entomopathogenic nematodes. The growth of the SB 1 strain in NB, TSB, TY and YS medium was higher than that of the SB 2 and SB 3 strain. The packed cell volume of the SB 1 strain was reduced in NB medium which showed radical pH change. Phase I of the SB 1 strain was maintained in TSB medium after being stored for 2 weeks at $4^{\circ}C$. Culture broth with the SB 1 strain in TSB medium for 6 days and 7 days showed antifungal activities against Rhizoctonia solani KACC 40142, Botrytis cinerea Pers. KACC 40854, and Botrytis cinerea Pers. KACC 41008. Culture broth with the SB 1 strain in TSB medium containing 100 mM L-proline for 5 days showed antifungal activities against Rhizoctonia solani KACC 40142, and Botrytis cinerea Pers. KACC 40854.

Synthesis of CuSbS2 and CuSbSe2 Nanocrystals by a Mechanochemical Method (기계화학적 방법에 의한 CuSbS2와 CuSbSe2 나노입자의 합성)

  • Park, Bo-In;Lee, Seung Yong;Lee, Doh-Kwon
    • Current Photovoltaic Research
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    • v.5 no.4
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    • pp.140-144
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    • 2017
  • $CuSbS_2$ (CAS) and $CuSbSe_2$ (CASe) nanocrystals (NCs), which consist of earth-abundant elements, were synthesized by a mechanochemical method. Elemental precursors such as copper, antimony, sulfur, and selenium were used without adding any organic solvents or additives. The NCs were synthesized by milling for a few hours. The sudden phase changes occurred by self-ignition and propagation, as previously observed in other mechanochemical synthetic processes. The XRD, Raman, and TEM analysis were carried out to determine the crystallinity and secondary phase of the as-synthesized CAS and CASe NCs, confirming the phase-pure synthesis of CAS and CASe. Optical properties were investigated by UV-Vis spectroscopy and it was observed that the band gap energies were about 1.1 and 1.5 eV, respectively for CAS and CASe, suggesting the potential for the use as solar cell materials. The NC colloids dispersed in anhydrous ethanol were prepared and coated on Mo substrates by a facile doctor-blade method. The investigation on the solar cell properties of the as-synthesized materials is underway.

The Microstructure and Electrical Characteristics of High Voltage ZnO Varistors with $Sb_2O_3$Additive ($Sb_2O_3$가 첨가된 고전압 ZnO 바리스터의 미세 구조 및 전기적 특성)

  • Oh, Soo-Hong;Jung, Woo-Sung;Hong, Kyung-Jin;Lee, Jin;Kim, Tae-Sung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.369-372
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    • 2000
  • ZnO varistor is studied to sintering condition and mixing condition for the improvement to non linear of electrical characteristics. In this paper, ZnO varistor, ZnO-Bi$_2$O$_3$-Y$_2$O$_3$-MnO-Cr$_2$O$_3$-Sb$_2$O$_3$series, is fabricated with Sb$_2$O$_3$mol ratio(0.5~4[mol%]) and sintered at 1250[$^{\circ}C$] for 2 hours. The grain size to Sb$_2$O$_3$moi ratio was measured by fractal mathematics. The ZnO varistors that Sb$_2$O$_3$mot ratio is 1[mol%] were shown small grain size because of spinel phase. The fractal dimension were increased with increasing of Sb$_2$O$_3$mo ratios. The capacitance of ZnO varistors with increasing of Sb$_2$O$_3$additive in voltage-capacitance characteristics was decreased by small grain size.

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Fabrication Process and Power Generation Characteristics of the Micro Thermoelectric Devices Composed of n-type Bi-Te and p-type Sb-Te Nanowires (n형 Bi-Te 나노와이어와 p형 Sb-Te 나노와이어로 구성된 미세열전소자의 형성공정 및 열전발전특성)

  • Kim, Min-Young;Park, Kyung-Won;Oh, Tae-Sung
    • Korean Journal of Metals and Materials
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    • v.47 no.4
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    • pp.248-255
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    • 2009
  • A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

The characterization of the $Si_{1-x}Sb_x$ thin films for infrared microbolometer (적외선 마이크로 볼로미터를 위한 $Si_{1-x}Sb_x$ 박막의 특성)

  • Lee, Dong-Keun;Ryu, Sang-Ouk;Yang, Woo-Seok;Cho, Seong-Mok;Cheon, Sang-Hoon;Ryu, Ho-Jun
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.3
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    • pp.13-17
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    • 2009
  • we have studied characterization of microbolometer based on the co-sputtered silicon-antimony ($Si_{1-x}Sb_x$) thin film for infrared microbolometer. We have investigated the resistivity and the temperature coefficient of resistance (TCR) with annealing. We deposited the films using co-sputtering method at $200^{\circ}C$ in the Ar environment. The Sb concentration has been adjusted by applying variable DC power from Sb targets. TCR of deposited $Si_{1-x}Sb_x$ films have been measured the range of -2.3~-2.8%/K. The resistivity of the film is low but TCR is higher than the other bolometer materials. Resistivity of the films has not been affected hugely according to the low annealing temperature however the resistivity has been dramatically decreased over $250^{\circ}C$. It is caused of a phase change due to the rearrangement of Si and Sb atoms during crystallization process of the films.

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SWIR-LWIR Photoluminescence from Sb-based Epilayers Grown on GaAs Substrates by using MBE

  • Hussain, Laiq;Pettersson, Hakan;Wang, Qin;Karim, Amir;Anderson, Jan;Jafari, Mehrdad;Song, Jindong;Choi, Won Jun;Han, Il Ki;Lim, Ju Young
    • Journal of the Korean Physical Society
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    • v.73 no.11
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    • pp.1604-1611
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    • 2018
  • Utilizing Sb-based bulk epilayers on large-scale low-cost substrates such as GaAs for fabricating infrared (IR) photodetectors is presently attracting significant attention worldwide. For this study, three sample series of $GaAs_xSb_{1-x}$, $In_{1-x}Ga_xSb$, and $InAs_xSb_{1-x}$ with different compositions were grown on semi-insulating GaAs substrates by using molecular beam epitaxy (MBE) and appropriate InAs quantum dots (QDs) as a defect-reduction buffer layer. Photoluminescence (PL) signals from these samples were observed over a wide IR wavelength range from $2{\mu}m$ to $12{\mu}m$ in agreement with the expected bandgap, including bowing effects. In particular, interband PL signals from $InAs_xSb_{1-x}$ and $In_{1-x}Ga_xSb$ samples even at room temperature show promising potential for IR photodetector applications.

Effect of Sintering Temperature and Sb/Bi Ratio on Microstructure and Grain Boundary Properties of ZnO-Bi2O3-Sb2O3-Co3O4 Varistor (소결온도와 Sb/Bi 비가 ZnO-Bi2O3-Sb2O3-Co3O4 바리스터의 미세구조와 입계 특성에 미치는 영향)

  • Hong, Youn-Woo;Shin, Hyo-Soon;Yeo, Dong-Hun;Kim, Jin-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.12
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    • pp.969-976
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    • 2011
  • In this study we aims to evaluate the effects of 1/3 mol% $Co_3O_4$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of $Co_3O_4$ in $ZnO-Bi_2O_3-Sb_2O_3$ (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient ${\alpha}$=23~50) compared to ZBS. Doping of $Co_3O_4$ to ZBS seemed to form $V^{\cdot}_o$(0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

Characteristics of Ag-added Ge2Sb2Te5 Thin Films and the Rapid Crystallization (Ag-첨가 Ge2Sb2Te5 박막의 물성 및 고속 결정화)

  • Kim, Sung-Won;Song, Ki-Ho;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.7
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    • pp.629-637
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    • 2008
  • We report several experimental data capable of evaluating the amorphous-to-crystalline (a-c) phase transformation in $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ (x = 0, 0.05, 0.1) thin films prepared by a thermal evaporation. The isothermal a-c structural phase changes were evaluated by XRD, and the optical transmittance was measured in the wavelength range of $800{\sim}3000$ nm using a UV-vis-IR spectrophotometer. A speed of the a-c transition was evaluated by detecting the reflection response signals using a nano-pulse scanner with 658 nm laser diode (power P = $1{\sim}17$ mW, pulse duration t = $10{\sim}460$ ns). The surface morphology and roughness of the films were imaged by AFM. It was found that the crystallization speed was so enhanced with an increase of Ag content. While the sheet resistance of c-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was similar to that of c-phase $Ge_2Sb_2Te_5$ (i.e., $R_c{\sim}10{\Omega}/{\square}$), the sheet resistance of a-phase $(Ag)_x(Ge_2Sb_2Te_5)_{1-x}$ was found to be lager than that of a-phase $Ge_2Sb_2Te_5$, $R_a{\sim}5{\times}10^6{\Omega}{/\square}$. For example, the ratios of $R_a/R_c$ for $Ge_2Sb_2Te_5$ and $(Ag)_{0.1}(Ge_2Sb_2Te_5)_{0.9}$ were approximately $5{\times}10^5$ and $5{\times}10^6$, respectively.

A study on the removal of As, Sb, Bi from the copper sulfate solutions by Ion exchange resin containing Aminophosphosphonic acid as a functional group (황산동용액(黃酸銅溶液)에서 Aminophosphosphonic acid 관능기를 가진 이온교환수지에 의한 As, Sb, Bi 제거(除去)에 관한 연구(硏究))

  • Ahn, Jae-Woo;Seo, Jae-Seong
    • Resources Recycling
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    • v.21 no.5
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    • pp.50-57
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    • 2012
  • A comparative study has been carried out on the removal of impurities such As, Sb, Bi from the copper sulfate solution by ion exchange resin containing aminophosphosphonic acid as functional group. The various parameters which affect the removal of impurities; such as the reaction temperature, the reaction time, the amount of ion-exchange resins, the concentration of sulfuric acid in electrolyte, were studied. The basic experimental results showed that about 88% of Sb & 94% of Bi can be adsorbed in these chelate resins and removed from the copper sulfate solutions but As was removed below 10% from the solutions. And the selective elution of Bi and Sb from the adsorbed ion exchange resin also can be achieved by $H_2SO_4$ or HCl solutions. The results also showed that 98.1% of Sb and 96.6% of Bi can be adsorbed from the copper sulfate solutions after 2 Bed-volume of continuous ion exchange column test.