• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.241-246
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• 2003

The transparent conducting thin film of ATO (antimony-doped tin oxide) was successfully fabricated on$SiO_2$/glass substrate by a sol-gel dip coating method. The crystalline phase of the ATO thin film was identified as SnO$_2$ major phase and the film thickness was about 100 nm/layer at the withdrawal speed of 50 mm/minute. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin film which was annealed under nitrogen atmosphere were 84% and $5.0\times 10^{-3}\Omega \textrm{cm}$, respectively. It was found that the $SiO_2$ layer inhibited Na ion diffusion and the formation of impurities like $Na_2SnO_3$ or SnO while increasing Sb ion concentration and higher ratio of $Sb^{5+}/Sb^{3+}$in the film. Annealing at nitrogen atmosphere leads to the reduction of $Sn^{4+}$ as well as $Sb^{5+}$ resulting in decrease of the electrical resistivity of the film.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2008.11a
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• pp.482-487
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• 2008

성능이 우수한 다성분계 전극을 개발하기 위하여 Ru를 주 전극성분으로 Pt, Sn, Sb 및 Gd를 보조 전극성분으로 하여 3, 4성분계 전극의 성능과 산화제 생성량 및 전극 표면 분석을 행하여 다음의 결과를 얻었다. 1. 2분 동안 단위 W당 제거된 RhB 농토는 Ru:Sn:Sb=9:1:1 > Ru:Pt:Gd=5:5:1 > Ru:Sn=9:1 > Ru:Sn:Gd=9:1:1 > Ru:Sb:Gd=9:1:1로 나타났다. Ru:Sn:Sb=9:1.1 전극에서 발생하는 free Cl, ClO$_2$ 및 H$_2$O$_2$농도가 다른 전극보다 높은 것으로 나타나 산화제 생성경향과 RhB 분해율과는 상관관계가 있는 것으로 사료되었다. 4성분계 전극 중에서 Ru:Sn:Sb:Gd 전극의 성능이 가장 우수한 것으로 나타났으나 3성분계 전극인 Ru:Sn:Sb=9:1.1 전극보다 성능이 떨어지는 것으로 나타났다. Ru:Sn:Sb=9:1:1 전극에서 생성되는 산화제 농도가 다른 두 종류의 산화제 농도보다 높은 것으로 나타났고 4성분 전극의 경우 Ru:Sn:Sb:Gd 전극의 산화제 농도가 Ru:Sn:Sb:Gd 전극이 높거나 유사한 경우로 나타나 산화제 생성 경향과 RhB분해 능과는 상관관계가 있는 것으로 나타났다. 초기 RhB 분해 속도가 높은 전극의 COD 제거율도 높은 것으로 나타났다. OH 라디칼은 발생하지 않지만 염소계 산화제 농도가 높고 RhB제거율이 높아 Ru를 주 성분으로 한 전극의 RhB분해는 주로 간접 산화작용에 의한 것이며, 개발된 3, 4성분계 산화물 전극은 간접 산화용 전극임을 알 수 있었다. 에칭을 하기 전의 Ti판은 표면이 매끄러운 것으로 나타났으며, 35% 염산으로 에칭한 후의 Ti메쉬는 매우 거친 표면조직을 가지는 것을 관찰할 수 있었다. Ru:Sn:Sb=9:1:1 전극과 Ru:Sn:Sb:Gd 전극의 SEM 사진을 관찰한 결과 두 전극 모두 전극 물질이 균일하게 도포되어 있었으며, 두 전극 모두 열소성을 통해 전극 성분을 코팅할 때 발생하는 "mud crack"이 발생한 것이 관찰되었다 EDX 분석에서 Cl이 관찰되었는데, 전극 성분의 불완전 산화로 인한 비양론적 산화물 때문이며 이는 RhB 분해성능과 관련 있는 것으로 사료되었다.

• Asian-Australasian Journal of Animal Sciences
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• v.13 no.10
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• pp.1422-1428
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• 2000

This investigation was conducted to evaluate the shrimp flesh (SF) and shrimp by-product (SB) of the most abundant shrimp species (Metapenaeus affinis, Penaeus semisulcatus and Penaeus monodon) caught in Central Vietnam, with the emphasis on yield, gross and amino acid (AA) composition and effect of heat treatment. The results showed that the mean edible SF and SB (head and shells with tail) yields of the three shrimp species averaged 56.7 and 43.3%, respectively, of the total wet body weight, with the M. affinis generating the highest by-product yield (45.7%) and P. semisulcatus (40.6%) the lowest. Significant differences in dry matter (DM), crude protein (CP) and ash content were found between SF and SB. The DM content of SF (21.5%) was lower than of SB (24.9%) and the ash content (on a DM basis) of the SB in all shrimp species was more than three times that of the SF (p<0.05), whereas the CP content was almost twice as high in the SF as compared with the SB (p<0.05). The SB of the three species contained (on a DM basis) between 44.0 and 49.8% CP (p<0.05) and between 13.5 and 18.1% chitin (p<0.05). The Ca content of SB differed also between species (p<0.05). On average, the sum of AA in SB corresponded to 89.3% of the CP and essential AA accounted for about 50% of the total AA. The most abundant AA were arginine, aspartic and glutamic acids, which accounted for 33% of the total AA. Minor, but significant differences in some AA concentrations of SB between species were observed (p<0.05). With the exception of the DM and ether extract content, all other chemical constituents of entire shrimp, SF and SB were not significantly affected by heat treatment (p>0.05).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.89-89
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• 2010

The atomic structure of Sb/Si(5 5 12)-$2{\times}1$ surface, deposited at room temperature (RT) and post-annealed, has been identified by scanning tunneling microscopy and the corresponding interface has been studied by synchrotron core-level photoemission spectroscopy. With 0.3-nm Sb deposition at RT and postannealing at $600^{\circ}C$, the surface has been facetted to (225)-$2{\times}1$ and (112)-$1{\times}1$, and its Si 2p has shown that all the Si 2p surface components have disappeared, while the single Sb-Si interfacial component has appeared. Such results indicate that all of surface Si atoms are replaced by Sb atoms and the charge is transferred from Si to passivating Sb-atoms at the top layer. With subsequent postannealing up to $700^{\circ}C$, the surface has been facetted to (113)-$2{\times}2$ and (335)-$4{\times}2$, still having Sb-Si interfacial component and partially re-exposed Si surface components. From the present study, the role of surfactant atom, Sb, as well as the thermal-stabilization of Sb-passivated high-index Si surface will be exposed. Especially, the key role of the Sb/Si(113)-$2{\times}2$, composed of Rebonded-Dimer-Rebonded atom 1D structures, for stabilization will be discussed.

• Polymer(Korea)
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• v.39 no.2
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• pp.225-234
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• 2015

In this study, we proposed to synthesize thermally stable, soluble and conjugated Schiff base polymer (SbP). For this reason, a specific molecule namely 4,4'-thiodiphenol which has sulfur and oxygen bridge in its structure was used to synthesize bi-functional monomers. Bi-functional amino and carbonyl monomers namely 4,4'-[thio-bis(4,1-phenyleneoxy)] dianiline (DIA) and 4,4'-[thiobis(4,1-phenyleneoxy)]dibenzaldehyde (DIB) were prepared from the elimination reaction of 4,4'-thiodiphenol with 4-iodonitrobenzene and 4-iodobenzaldehyde, respectively. The structures of products were confirmed by elemental analysis, FTIR, $^1H$ NMR and $^{13}C$ NMR techniques. The molecular weight distribution parameters of SbP were determined by size exclusion chromatography (SEC). The synthesized SbP was characterized by solubility tests, TG-DTA and DSC. Also, conductivity values of SbP and SbP-iodine complex were determined from their solid conductivity measurements. The conductivity measurements of doped and undoped SbP were carried out by Keithley 2400 electrometer at room temperature and atmospheric pressure, which were calculated via four-point probe technique. When iodine was used as a doping agent, the conductivity of SbP was observed to be increased. Optical band gap ($E_g$) of SbP was also calculated by using UV-Vis spectroscopy. It should be stressed that SbP was a semiconductor which had a potential in electronic and optoelectronic applications, with fairly low band gap. SbP was found to be thermally stable up to $300^{\circ}C$. The char of SbP was observed 29.86% at $1000^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.8 no.3
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• pp.130-134
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• 2005

To the best knowledge, the formation and characterization of InSb nanowires have not been reported yet in spite of its good characteristics as a III-V compound semiconductor. The nanowire arrays were potentiostatically electrodeposited in a mixing solution of indium chloride, antimony chloride, citric acid, and potassium citrate according to our previous work on the electrodeposition of the stoichiometric InSb films. The electrical properties of nanowire arrays were measured by semiconductor parameter analyzer, and the microstructural analysis of the nanowires was conducted by employing XRD. Our experimental results indicate that the InSb nanowires have a highly preferred orientation of (220) direction and also exhibit electrical characteristics of n-type semiconductors which we, however, similar to semi-metals mainly due to their narrow band-gap and high electron mobility.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.549-553
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• 2014

$CoSb_3$-based skutterudite compounds are candidate materials for thermoelectric power generation in the mid-temperature range (600 - 900 K) because their thermoelectric properties can be enhanced by doping and filling. The joining property of thermoelectric module electrodes containing thermoelectric materials is of great importance because it can dominate the efficiency of the thermoelectric module. This study examined the properties of $CoSb_3$/Al/Ti/CuMo joined by the spark plasma sintering technique. Titanium thin foil was used to prevent the diffusion of copper into $CoSb_3$ and Aluminum thin foil was used to improve the adhesion between $CoSb_3$ and Ti. The insertion of an Aluminum interlayer between the Ti and $CoSb_3$ was effective for joining $CoSb_3$ to Ti by forming an intermediate layer at the Al-$CoSb_3$ boundary without any micro cracks. Specifically, the adhesion strength of the Ti/Al/$CoSb_3$ joining interface showed a remarkable improvement compared with our previous results, without deterioration of electrical property in the interface.

• Resources Recycling
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• v.8 no.5
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• pp.44-50
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• 1999

The sbdy iwestlgaled ihc propa-ties of Lhe dust\ulcorner rrom fe~~oallomya ~~ufacturTeh. e chemical composition, cornpasitlon material, p d c l e sire md shapes of the bulk dust, sired dust and magnetically separated durl were mvesligaled. As the re\ulcornerulL, we suppose that the dust from &gh Carbon Fenama~~gunesMc anuiact~vingP rocess is not sufiicient as solulce material of Mn because of ale low Mn canlenl (13.5%) and complicaled composition mate~ial. The dust from Bug F!lter or AOD Proccss is mi~inlym ade up of 0.2-2 pm Mn30, (Hausmam~iu)p iutlde in spherical shape and thc Mn content is 63.190.The dust from Cooler of AOD Process is inninly made up of coarse Ca(O1-Or)zM. n,FeyO,, SiO, and fine Mn30d.

• Bulletin of the Korean Chemical Society
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• v.26 no.5
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• pp.735-739
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• 2005

Presented is a voltammetric study of co-adsorption of irreversibly adsorbing Sb and Te on Pt(111). When a layer of Sb and Te was formed via simultaneous adsorption, the reduction peak of Te was observed at 0.30 V in the initial cathodic scan. In contrast, sequential adsorption of Sb followed by Te adsorption led to a Te reduction peak at 0.50 V in the initial scan. As the voltammetric scan was continued, in addition, the voltammogram of the simultaneously co-adsorbed layer changed, while that of the sequentially co-adsorbed layer did not. These observations are discussed in terms of formation of a homogeneously mixed layer and a layer consisting of heterogeneously separated domains of Sb and Te. Also, the difference in the adsorption strength of Sb and Te was observed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.210-214
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• 2016

In this paper, the decrease in the contact resistance of Ni germanide/Ge contact was studied as a function of the thickness of the antimony (Sb) interlayer for high performance Ge MOSFETs. Sb layers with various thickness of 2, 5, 8 and 12 nm were deposited by RF-Magnetron sputter on n-type Ge on Si wafers, followed by in situ deposition of 15nm-thick Ni film. The contact resistance of samples with the Sb interlayer was lower than that of the reference sample without the Sb interlayer. We found that the Sb interlayer can lower the contact resistance of Ni germanide/Ge contact but the reduction of contact resistance becomes saturated as the Sb interlayer thickness increases. The proposed method is useful for high performance n-channel Ge MOSFETs.