• Applied Microscopy
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• v.24 no.1
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• pp.102-113
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• 1994

A thin section of the methanogenic archaebacterium, Methanoplanus limicola, shows that the surface glycoprotein array (S-layer) is separated from plasma membrane by a distinct inter-space, approximately 4.0-6.0nm wide. We report our structural study of the S-layer by electron crystallographic techniques. Image analysis and thin sections of the S-layer treated with and without triton disclosed that retention of the single layer crystal requires the presence of detergent to avoid hydrophobic bonding.

• Journal of the Korean Ceramic Society
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• v.37 no.4
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• pp.381-387
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• 2000

Si3N4/stainless steel 316 joints with Ni buffer layer were fabricated by direct active brazing method (DIB) using Ag-Cu-Ti brazing alloy only and double brazing method (DOB) using Ag-Cu brazing alloy with Si3N4 pretreated with Ag-Cu-Ti brazing alloy. For the joint brazed by DIB method, Ti was segregated at the Si3N4/brazing alloy interface, but was not enough to form a stable joint interface. In addition, large amounts of Ni-Ti inter-metallic compounds were formed in tehbrazing alloy near the joint interface, which could deplete the contents of Ti involved in the interfacial reaction. However, for the joint brazed by DOB method, segregation of Ti at the joint interface were enough to enhance the formation of stable interfacial reaction products such as TiN and Ti-Si-Ni-N-(Cu) multicompounds, which restricted the formation of Ni-Tio inter-metallic compounds in the brazing alloy during brazing with Ni buffer layer. Fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was much improved by using DOB method rather than DIB method. It could be deduced that the differences of fracture strength of the joint with Ni buffer layer depending on brazing process adapted were directly affected by the formation of stable joint interface and the change in microstructure of the brazing alloy near the joint interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of interface. It was found that fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was gradually reduced as the thickness of Ni buffer layer in the joint was increased from 0.1 mm to 10 mm. It seems to due to the increased residual stress in the joint as the thickness of Ni buffer layer is increased. The maximum fracture strength of Si3N4/S.S 316 joints with Ni buffer layer was 386 MPa, and the fracture of joint was originated at Si3N4/brazing alloy joint interface and propagated into Si3N4 matrix.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.12
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• pp.5286-5306
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• 2016

Emerging applications in automation, medical imaging, traffic monitoring and surveillance need real-time data transmission over Wireless Sensor Networks (WSNs). Guaranteeing Quality of Service (QoS) for real-time traffic over WSNs creates new challenges. Rapid penetration of smart devices, standardization of Machine Type Communications (MTC) in next generation 5G wireless networks have added new dimensions in these challenges. In order to satisfy such precise QoS constraints, in this paper, we propose a new cross-layer QoS-provisioning strategy in Wireless Multimedia Sensor Networks (WMSNs). The network layer performs statistical estimation of sensory QoS parameters. Identifying QoS-routing problem with multiple objectives as NP-complete, it discovers near-optimal QoS-routes by using evolutionary genetic algorithms. Subsequently, the Medium Access Control (MAC) layer classifies the packets, automatically adapts the contention window, based on QoS requirements and transmits the data by using routing information obtained by the network layer. Performance analysis is carried out to get an estimate of the overall system. Through the simulation results, it is manifested that the proposed strategy is able to achieve better throughput and significant lower delay, at the expense of negligible energy consumption, in comparison to existing WMSN QoS protocols.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.564-569
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• 2002

Heteroepitaxial GaN films were grown on sapphire substrates in order to study the effects of the buffer layer's surface roughness and thermal treatment on the epitaxial layer's quality. For this, GaN buffer layers were grown at $550^{\circ}C$ with various TMGa flow rates and durations of growth, and annealed at $1010^{\circ}C$ for 3 min after the temperature was raised by 23 ~ $92^{\circ}C/min$, and then GaN epitaxial layers were grown at $1000^{\circ}C$. It has been found that the buffer layer's surface roughness and the thermal treatment condition are critical factors on the quality of the epitaxial layer. When a buffer layer was frown with a TMGa flow rate of $24\mu mole/min$ for 30 sec, the surface roughness of the buffer lather was minimum and when the thermal ramping rate was $30.6^{\circ}C/min$ on this layer, the successively grown epitaxial layer's crystalline and optical qualities were optimized with a specular morphology. The minimum full width at half maximum(FWHM) of GaN(0002) x-ray diffraction peak and that of near-band-edge(NBE) peak from a room temperature photoluminescence (PL) were 5 arcmin and 9 nm, respectively.

• Journal of Korea Society of Industrial Information Systems
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• v.17 no.3
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• pp.9-17
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• 2012

In this paper, we propose a SPN 256 bit block cipher so called XSB(eXtended SPN Block cipher) which has a symmetric structure in encryption and decryption. The proposed XSB is composed of the even numbers of N rounds where the first half of them, 1 to N/2-1 round, applies a pre-function and the last half of them, N/2+1 to N round, employs a post-function. Each round consists of a round key addition layer, a substiution layer, a byte exchange layer and a diffusion layer. And a symmetry layer is located in between the pre-function layer and the post-function layer. The symmetric layer is composed with a multiple simple bit slice involution S-Boxes. The bit slice involution S-Box symmetric layer increases difficult to attack cipher by Square attack, Boomerang attack, Impossible differentials cryptanalysis etc.

• Journal of Microbiology and Biotechnology
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• v.19 no.10
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• pp.1176-1183
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• 2009

Lactobacillus crispatus (L. crispatus) ZJ001 is highly adhesive to epithelial cells and expresses S-layer proteins. In this study, S-S-layer layer genes were sequenced and expressed in E. coli to characterize the function of proteins with this particular strain. L. crispatus ZJ001 harbored two S-layer genes slpA and slpB, and only slpA gene was expressed in the bacterium, as revealed by RT-PCR and immunoassays. The mature SlpA showed 47% amino acid sequence identity to SlpB. The SlpA and SlpB of L. crispatus ZJ001 were highly homologous at the C-terminal region to other Lactobacillus S-layer proteins, but were substantially variable at N-terminal and middle regions. Electron microscopic analysis indicated that His-slpA expressed in E. coli was able to form a sheet-like structure similar to the natural S-layer, but His-slpB formed as disc-like structures. In the cell binding experiments, HeLa cells were able to bind to both recombinant His-slpA and His-slpB proteins to the extent similar to the natural S-layer. The cell binding domains remain mostly in the N-terminal regions in SlpA and SlpB, as shown by high binding of truncated peptides SlpA2-228 and SlpB2-249. Our results indicated that SlpA was active and high binding to HeLa cells, and that the slpA gene could be targeted to display foreign proteins on the bacterial surface of ZJ001 as a potential mucosal vaccine vector.

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.93-98
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• 2017

This experiment investigated characteristic changes in a $Cu_2ZnSnS_4$(CZTS) solar cell by applying a $Zn(O_x,S_{1-x})$ butter layer with various compositions on the upper side of the absorber layer. Among the four single layers such as $Zn(O_{0.76},S_{0.24})$, $Zn(O_{0.56},S_{0.44})$, $Zn(O_{0.33},S_{0.67})$, and $Zn(O_{0.17},S_{0.83})$, the $Zn(O_{0.76},S_{0.24})$ buffer layer was applied to the device due to its bandgap structure for suppressing electron-hole recombination. In the application of the $Zn(O_{0.76},S_{0.24})$ buffer layer to the device, the buffer layer in the device showed the composition of $Zn(O_{0.7},S_{0.3})$ because S diffused into the buffer layer from the absorber layer. The $Zn(O_{0.7},S_{0.3})$ buffer layer, having a lower energy level ($E_V$) than a CdS buffer layer, improved the $J_{SC}$ and $V_{OC}$ characteristics of the CZTS solar cell because the $Zn(O_{0.7},S_{0.3})$ buffer layer effectively suppressed electron-hole recombination. A substitution of the CdS buffer layer by the $Zn(O_{0.7},S_{0.3})$ buffer layer improved the efficiency of the CZTS solar cell from 2.75% to 4.86%.

• Journal of the Mineralogical Society of Korea
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• v.10 no.2
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• pp.97-104
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• 1997

Based on the method of determination for relative stability of each phase from the difference among the interaction parameters of the phases consisting the mixed layer, the types of interactions between layers were specified and interaction parameter between layers in ordered domain was analytically derived as a function parameter between layers in ordered domain was analytically derived as a function of not only temperature and mole fraction of layers but also ordering parameter. Interaction parameter between the different layers in ordered phase, L is as follows:{{{{ {L }_{1 } (X,Q,T)= { C} over { Q} -4(1-2Q) { L}^{2 } - { RT} over {2} ln { 1} over {2 } - { 2RT} over { { X}_{ s} } ln { { 4QX}`_{s } ^{2 } } over {(1- { X}_{s }- { QX}_{s })( { X}_{s }- {QX }_{s } ) } }}}}L2 is the interaction parameter between ordered and disordered phase in domain and is the mole fraction of the domain which represent the infinite length of mixed layer mineral and Q and C are the reaction progress parameter and arbitrary constant, respectively. This equation was used for the I/S mixed layer clay minerals to infer the relative stability of R1 type I/S mixed layer in the temperature range from 373K to 450K. The result of calculation suggest that, owing to the decrease in interaction parameter with increasing temperature. The interaction parameter decreases more rapidly with decreasing mole fraction of smectite in domain, which is consistent with the fact that the probability of finding the series smectite layer is lo in the domain with small mole fraction of smectite layers in natural system.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.152-153
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• 2006

The new approach to buffer layer design for CIGS solar cells that permitted to reduce the buffer absorption losses in the short wavelength range and to overcome the disadvantages inherent to Cd-free CIGS solar cells was proposed. A chemical bath deposition method has been used to produce a high duality buffer layer that comprises thin film of CdS and Zn-based film. The double layer was grown on either ITO or CIGS substrates and its morphological, structural and optical properties were characterized. The Zn-based film was described as the ternary compound $ZnS_x(OH)_y$. The composition of the $ZnS_x(OH)_y$ layer was not uniform throughout its thickness. $ZnS_x(OH)_y$/CdS/substrate region was a highly intermixed region with gradually changing composition. The short wavelength cut-off of double layer was shifted to shorter wavelength (400nm) compared to that (520 nm) for the standard CdS by optimization of the double buffer design. The results show the way to improve the light energy collection efficiency of the nearly cadmium-free CIGS-based solar cells.