• 제목/요약/키워드: S-doping

검색결과 694건 처리시간 0.034초

nBn Based InAs/GaSb Type II Superlattice Detectors with an N-type Barrier Doping for the Infrared Detection

  • 김하술;이훈;황제환;이상준
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.128.2-128.2
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    • 2014
  • Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

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Polycyclotriphosphazene Derivative Grafted and NanometerY2O3 Doped SPEEK Composite Membrane for DMFC

  • Li, Xia;Guo, Qiang;Zhang, Tianjiao;Qian, Junzhi;Tan, Xiaolin
    • 대한화학회지
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    • 제57권5호
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    • pp.625-633
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    • 2013
  • A type of polycyclotriphosphazene derivative (PCTPD), hexasulfanilic acid polycyclotriphosphazene (HSACP) and HSACP grafting SPEEK, sulfonated poly[2-(petachloropolycyclotriphosphazene-oxy)] etheretherketone (SPPSACPEEK) were synthesized, which were characterized by FTIR and $^{31}P$ NMR. Then three types of composite membranes such as HSACP grafting SPEEK, HSACP blending SPEEK, and nano $Y_2O_3$ doping and HSACP grafting SPEEK, respectively, were continuously prepared by solution-casting method. Comparing to SPEEK membranes with different amount of HSACP grafted or blended, grafting 15 wt% HSACP and doping 10 wt% nano $Y_2O_3$ SPEEK membrane conducted outstanding overall behavior of proton conductivity reaching $3.18 {\times}10^{-2}$ S/cm at $90^{\circ}C$ which was merely junior to SPEEK with 15 wt% HSACP grafted, methanol permeability coefficient getting $9.46{\times}10^{-8}cm^2{\cdot}s^{-1}$, swelling degree of 20.9% and solid residue of 98.98% which was superior to all specimen.

광촉매 TiO2의 황산용액에서의 양극산화전압과 도핑이 광촉매 활성에 미치는 영향 (Effects of Anodic Voltages of Photcatalytic TiO2 and Doping in H2SO4 Solutions on the Photocatalytic Activity)

  • 이승현;오한준;지충수
    • 한국재료학회지
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    • 제22권8호
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    • pp.439-444
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    • 2012
  • To compare the photocatalytic performances of titania for purification of waste water according to applied voltages and doping, $TiO_2$ films were prepared in a 1.0 M $H_2SO_4$ solution containing $NH_4F$ at different anodic voltages. Chemical bonding states of F-N-codoped $TiO_2$ were analyzed using surface X-ray photoelectron spectroscopy (XPS). The photocatalytic activity of the co-doped $TiO_2$ films was analyzed by the degradation of aniline blue solution. Nanotubes were formed with thicknesses of 200-300 nm for the films anodized at 30 V, but porous morphology was generated with pores of 1-2 ${\mu}m$ for the $TiO_2$ anodized at 180 V. The phenomenon of spark discharge was initiated at about 98 V due to the breakdown of the oxide films in both solutions. XPS analysis revealed the spectra of F1s at 684.3 eV and N1s at 399.8 eV for the $TiO_2$ anodized in the $H_2SO_4-NH_4F$ solution at 180 V, suggesting the incorporation of F and N species during anodization. Dye removal rates for the pure $TiO_2$ anodized at 30 V and 180 V were found to be 14.0% and 38.9%, respectively, in the photocatalytic degradation test of the aniline blue solution for 200 min irradiation; the rates for the F-N-codoped $TiO_2$ anodized at 30 V and 180 V were found to be 21.2% and 65.6%, respectively. From the results of diffuse reflectance absorption spectroscopy (DRS), it was found that the absorption edge of the F-N-codoped $TiO_2$ films shifted toward the visible light region up to 412 nm, indicating that the photocatalytic activity of $TiO_2$ is improved by appropriate doping of F and N by the addition of $NH_4F$.

Utilization of Element-doping Titania-impregnated Granular Activated Carbon in a Plug-flow System for Removal of BTEX

  • Jo, Wan-Kuen;Shin, Seung-Ho;Hwang, Eun-Song;Yang, Sung-Bong
    • Asian Journal of Atmospheric Environment
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    • 제4권3호
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    • pp.177-188
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    • 2010
  • The use of an activated carbon (AC) system alone has the limitation that the pollutants are not eliminated but only transferred to another phase with the consumed AC becoming hazardous waste itself. Therefore, the present study investigated the feasibility of using a combined system of granular AC (GAC) with S-doped visible-light-induced $TiO_2$ (GAC/S-doped $TiO_2$) to clean monocyclic aromatic hydrocarbons (MAHs) with concentrations at $\leq$ 3 mg $m^{-3}$, using a continuous air-flow reactor. This study conducted three different experiments: an adsorption test of pure GAC and GAC/S-doped $TiO_2$; a long-term adsorptional photocatalytic (AP) activity test of GAC/S-doped $TiO_2$; and an AP activity test of GAC/S-doped $TiO_2$ under different conditions. For the AP activity test, three parameters were evaluated: various weights of GAC/S-doped $TiO_2$ (0.9, 4.4, and 8.9 g); various flow rates (FRs) (0.5, 1 and 2 L $min^{-1}$); and various input concentrations (ICs) of the target MAHs (0.1, 1, 2 and 3 mg $m^{-3}$). The adsorption efficiencies were similar for the pure GAC and GAC/S-doped $TiO_2$ reactors, suggesting that S-doped $TiO_2$ particles on GAC surfaces do not significantly interfere with the adsorption capacity of GAC. Benzene exhibited a clear AP activity, whereas no other target MAHs did. In most cases, the AP efficiencies for the target MAHs did not significantly vary with an increase in weight, thereby suggesting that, under the weight range tested in this study, the weights or FRs are not important parameters for AP efficiency. However, ICs did influence the AP efficiencies.

Photocatalysis of Low Concentration of Gaseous-Phase Benzene Using Visible-Light Irradiated N-doped and S-doped Titanium Dioxide

  • Jo, Wan-Kuen;Kim, Jong-Tae
    • Environmental Engineering Research
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    • 제13권4호
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    • pp.171-176
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    • 2008
  • Studies on visible-light-driven photocatalysis of air pollutants at indoor air quality (IAQ) levels have been limited. Current study investigated visible-light derived photocatalysis with N-doped and S-doped titanium dioxide ($TiO_2$) for the control of benzene at indoor levels. Two preparation processes were employed for each of the two types of photocatalyst: urea-Degussa P-25 $TiO_2$ and titania-colloid methods for the N-doped $TiO_2$; and titanium isopropoxid- and tetraisopropoxide-thiourea methods for the S-doped $TiO_2$. Furthermore, two coating methods (EDTA- and acetylacetone-dissolving methods) were tested for both the N-doped and S-doped $TiO_2$. The two coating methods exhibited different photocatalytic degradation efficiency for the N-doped photocatalysts, whereas they did not exhibit any difference for the S-doped photocatalysts. In addition, the two doping processes showed different photocatalytic degradation efficiency for both the S-doped and N-doped photocatalysts. For both the N-doped and S-doped $TiO_2$, the photocatalytic oxidation (PCO) efficiency increased as the hydraulic diameter (HD) decreased. The degradation efficiency determined via a PCO system with visible-light induced $TiO_2$ was lower than that with UV-light induced unmodified $TiO_2$, which was obtained from previous studies. Nevertheless, it is noteworthy that for the photocatalytic annular reactor with the HD of 0.5 cm, PCO efficiency increased up to 52% for the N-doped $TiO_2$ and 60% for the S-doped $TiO_2$. Consequently, when combined with the advantage of visible light use over UV light use, it is suggested that with appropriate HD conditions, the visible-light-assisted photocatalytic systems can also become an important tool for improving IAQ.

Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

  • Shin, S.H.;Lee, S.H.;Kim, Y.S.;Heo, J.H.;Bae, D.I.;Hong, S.H.;Park, S.H.;Lee, J.W.;Lee, J.G.;Oh, J.H.;Kim, M.S.;Cho, C.H.;Chung, T.Y.;Kim, Ki-Nam
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제3권2호
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    • pp.69-75
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    • 2003
  • Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

RF 스퍼터링 및 급속열처리 공정으로 제작한 ZnS:Nd 박막의 구조 및 광학적 특성 (Structure and Optical Properties of ZnS:Nd Thin filmsss Produced by RF Sputtering and Rapid Thermal Annealing Process)

  • 김원배
    • 한국전자통신학회논문지
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    • 제16권2호
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    • pp.233-240
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    • 2021
  • 다양한 함량으로 네오디뮴이 도핑된 황화아연 박막제작은 RF 마그네트론 스퍼터링 장비를 이용하여 황화아연과 네오디뮴을 동시 증착하여 박막을 제작하였고, 후처리 공정으로 급속열처리를 400℃ 에서 30분간 실시하였다. 다양한 네오디뮴의 도핑 함량(0.35at.%, 1.31at.%, 1.82at.% 및 1.90at.%)을 갖는 ZnS 박막의 구조, 형태, 광학적 특성을 연구하였다. X-선 회절 패턴은 모든 박막에서 (111)방향의 큐빅 구조로 성장하였다. SEM 이미지와 AFM 이미지를 통해 네오디뮴 도핑 함량에 의한 박막의 표면 및 구조적 형태에 대하여 설명하였다. EDAX를 통해 다른 불순물이 포함되지 않은 Zn, S 및 Nd의 원소만을 확인하였다. UV-vis 스펙트럼을 이용하여 제작된 박막의 투과율과 밴드갭을 확인하였다.

3-D 마이크로시스템을 위한 신호 간섭 분석 (Analysis of Signal Interference for 3-D Microsystems)

  • 정두연;이종호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.41-44
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    • 2001
  • In this paper, we explain briefly polysilicon guard layer in a simple 3-D structure. Simulation was performed extensively to see interference and characterize the role of the polysilicon guard layer. Especially, we performed extensively S-parameter simulation to analysis the signal interference. The interference was characterized in terms of oxide thickness, polysilicon doping concentration, thickness, number of contact of polysilicon guard, and metal guard size.

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Luminescence of orange-emitting ZnS:Mn,Cu,Cl for EL device

  • Lee, Hak-Soo;Han, Sang-Do;Gwak, Ji-Hye;Han, Chi-Hwan;Kim, Jung-Duk
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1093-1095
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    • 2006
  • An orange-emitting phosphor for inorganic electroluminescent device has been studied. Cu and Cl were co-doped in Mn-doped ZnS for a high-performing phosphor. The effect of $Mn^{2+}-doping$ concentration as well as $Mg^{2+}-sensitizer$ addition on the luminescence characteristics has been investigated.

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