Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of Signal Interference for 3-D Microsystems

3-D 마이크로시스템을 위한 신호 간섭 분석

  • 정두연 (원광대학교 대학원 전자재료공학과) ;
  • 이종호 (원광대학교 전기전자 및 정보공학부)
  • Published : 2001.07.01
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Abstract

In this paper, we explain briefly polysilicon guard layer in a simple 3-D structure. Simulation was performed extensively to see interference and characterize the role of the polysilicon guard layer. Especially, we performed extensively S-parameter simulation to analysis the signal interference. The interference was characterized in terms of oxide thickness, polysilicon doping concentration, thickness, number of contact of polysilicon guard, and metal guard size.

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