• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.768-771
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• 2013

본 연구에서는 이중게이트 MOSFET의 채널도핑농도의 변화에 따른 문턱전압이하 전류의 변화를 분석하였다. 이를 위하여 이중게이트 MOSFET의 채널 내 전위분포를 구하기 위하여 포아송방정식을 이용하였으며 이때 전하분포함수에 대하여 가우시안 함수를 사용하였다. 전위분포는 경계조건을 이용하여 채널크기에 따른 해석학적인 함수로 구하였다. 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 채널도핑농도 등에 대하여 문턱전압이하 전류 특성의 변화를 관찰하였다. 본 연구의 전위모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 문턱전압이하 전류 특성을 분석하였다. 분석결과, 문턱전압이하 전류는 채널도핑농도 및 가우시안 분포함수의 변수 등에 크게 영향을 받는 것을 관찰할 수 있었다.

• 한국응용약물학회:학술대회논문집
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• 한국응용약물학회 1995년도 춘계학술대회
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• pp.81-81
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• 1995

It is well known that Src Homology 2(SH2) domain in many intracellular signal transduction proteins is very important. The domain has about 100 amino acid residues and bind phosphotyrosine-containing peptide with high affinity and specificity. Lck SH2 domain is a Src-like, lymphocyte-specific tyrosine kinase. An 11-residue phosphopeptide derived from the hamster polvoma middle-T antigen, EPQp YEEIPIYL, binds with an 1 nM dissociation constant to Lck SH2 domain. And it is known that the phosphotyrosine and isoleucine residues of the peptide are tightly bound by two well-defined pockets on Lck SH2 domain's surface. To investigate the conformational changes during complexation of SH2 domain with phosphopeptide we have performed the molecular dynamics simulation for Lck SH2 domain with peptide and peptide-free form at look in aqueous solution. More than 3000 water molecules were incorporated to solvate Lck SH2 domain and peptide. Periodic boundary condition has been applied in molecular dynamics simulation. Data analysis with the results of that simulation shows that the phosphopeptide makes primary interaction with the Lck SH2 domain at six central residues, The comparison of the complexed and uncomplexed SH2 domain structures in solution has revealed only relatively small change. But the hydrophilic and hydrophobic pockets in the protein surface show the conformational changes in spite of the small structural difference between the complex and peptide-free forms.

• Bulletin of the Korean Chemical Society
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• 제32권1호
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• pp.191-195
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• 2011

This study reports the root cause of the improved rate performance of $LiFePO_4$ after Cr doping. By measuring the chemical diffusion coefficient of lithium ($D_{Li}$) using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), the correlation between the electrochemical performance of $LiFePO_4$ and Li diffusion is acquired. The diffusion constants for $LiFePO_4$/C and $LiFe_{0.97}Cr_{0.03}PO_4$/C measured from CV are $2.48{\times}10^{-15}$ and $4.02{\times}10^{-15}cm^2s^{-1}$, respectively, indicating significant increases in diffusivity after the modification. The difference in diffusivity is also confirmed by EIS and the $D_{Li}$ values obtained as a function of the lithium content in the cathode. These results suggest that Cr doping facilitates Li ion diffusion during the charge-discharge cycles. The low diffusivity of the $LiFePO_4$/C leads to the considerable capacity decline at high discharge rates, while high diffusivity of the $LiFe_{0.97}Cr_{0.03}PO_4$/C maintains the initial capacity, even at high C-rates.

• 한국정보통신학회논문지
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• 제17권5호
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• pp.1196-1202
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• 2013

본 연구에서는 이중게이트 MOSFET에 대한 항복전압의 변화를 채널도핑 및 소자파라미터에 따라 이차원 전위분포모델을 이용하여 분석한 것이다. 낮은 항복전압은 전력소자동작에 저해가 되고 있으며 소자의 크기가 감소하면서 발생하는 단채널 효과에 의하여 이중게이트 MOSFET의 경우도 심각하게 항복전압이 감소하고 있다. 항복전압분석을 위하여 포아송방정식의 이차원 해석학적 전위분포모델을 이용하여 채널도핑농도와 소자 파라미터인 채널길이, 채널두께, 게이트산화막 두께 등에 대하여 항복전압의 변화를 관찰하였다. 분석결과 항복전압은 채널도핑 농도의 크기뿐만이 아니라 소자크기 파라미터에 대해서 커다란 변화를 보이고 있었으며 특히 채널도핑함수인 가우시안 함수의 형태에 따라서도 큰 변화를 보이고 있다는 것을 관찰할 수 있었다.

• Journal of Korean Vacuum Science & Technology
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• 제4권3호
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• pp.73-77
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• 2000

Single crystal and polycrystalline Si thin films were doped with phosphorus by a 2-zone diffusion method to develop the low-resistivity polycrystalline Si electrode for a hemispherical grain. Solid phosphorus source was used in order to achieve uniformly and highly doped surface region of polycrystalline Si films having rough surface morphology. In case of 2-zone diffusion method, it is proved that the heavy doping near the surface area can be achieved even at a relatively low temperature. SIMS analysis revealed that phosphorus doping concentration in case of using solid P as a doping source was about 50 times as that of phosphine source at 750$^{\circ}C$. Also, ASR analysis revealed that the carrier concentration was about 50 times as that of phosphine. In order to evaluate the electrical characteristics of doped polycrystalline Si films for semiconductor devices, MOS capacitors were fabricated to measure capacitance of polycrystalline Si films. In ${\pm}$2 V measuring condition, Si films, doped with solid source, have 8% higher $C_{min}$ than that of unadditional doped Si films and 3% higher $C_{min}$ than that of Si films doped with $PH_3$ source. The leakage current of these films was a few fA/${\mu}m^2$. As a result, a 2-zone diffusion method is suggested as an effective method to achieve highly doped polycrystalline Si films even at low temperature.

• Journal of the Korean Data and Information Science Society
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• 제25권3호
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• pp.567-578
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• 2014

이 연구는 Rasch 모형을 적용하여 우리나라 엘리트 선수의 도핑 사고성향 분석을 위한 PEAS의 타당도를 검증하는데 목적이 있다. PEAS (performance enhancement attitude scale)는 Petroczi (2006)이 제시한 선수들의 도핑 (doping)에 대한 사고방식과 성향을 측정하는 척도로 17문항 6점 척도로 구성되어 있다. 국가대표 엘리트 선수 438명을 대상으로 측정하였고, Rasch 모형을 적용하여 타당도를 분석하였다. 우선 Rasch 모형의 기본가정인 일차원성을 검증하기 위해 SPSS 프로그램을 적용하여 주성분분석을 실시하였다. 문항의 적합도 검증과 측정척도 범주의 타당도, 그리고 성별에 따른 차별기능문항을 추출하기 위해 Winsteps 프로그램을 이용하였다. 분석에 모든 유의수준은 .05로 설정하였다. 자료분석 결과는 다음과 같다. 첫째, 총 17문항으로 구성된 PEAS는 일차원성을 만족하는 것으로 나타났다. 둘째, 응답범주 수의 타당도는 6점척도보다 5점척도가 더 적합한 것으로 나타났다. 셋째, 문항의 적합도는 17문항 중 7문항 (문항1, 문항9, 문항10, 문항12, 문항13, 문항14, 문항17)이 통계적으로 적합하지 못한 것으로 나타났다. 넷째, 성별에 따른 차별기능문항 분석 결과 3문항 (문항3, 문항12, 문항13)이 추출되었다. 따라서 이 연구에서 우리나라 엘리트 선수의 도핑 사고성향분석을 위한 PEAS는 9문항 5점척도가 타당한 것으로 구명되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권1호
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• 한국진공학회지
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• 제17권1호
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• pp.40-45
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• 2008

유리기판 위에 약 500 nm 의 두께로 성장된 ZnO층의 구조적, 광학적, 전기적 성질에 미치는 갈륨도핑의 영향에 대하여 연구 하였다. 다결정 ZnO 와 GZO 층은 상온에서 radio frequency magnetron sputtering 법을 사용하여 성장되었다. 투과전자현미경 (TEM)과 x-ray 회절분석 (XRD)에 의하면, 갈륨이 도핑된 ZnO 박막의 결정성은 ZnO에 비하여 향상되었고 (002)방향을 따라 우선성장 되었음이 발견되었다. GZO 박막의 투과도는 가시광 영역에서 ZnO 박막에 비해 약 10% 정도 향상된 것으로 나타났다. PL 분석에 따르면, NBE emission 세기와 DL emission 세기의 비는 GZO 와 ZnO의 경우 각각 2.65:1 과 1.27:1로 나타났다. GZO와 ZnO의 비저항은 각각 1.27과 1.61 $\Omega{\cdot}cm$로서 GZO의 전기전도도가 높았다. GZO 와 ZnO의 캐리어농도는 각각 $10^{18}$ and $10^{20}cm^2$/Vs으로 측정되었다. 본 실험결과 따르면, Ga 도핑으로 인해 ZnO 박막의 전기적, 광학적, 구조적 특성이 향상되었음을 알 수 있었다.

• 한국재료학회지
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• 제22권11호
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• pp.631-635
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• 2012

Nickel oxide was doped with a wide range of concentrations (mol%) of Aluminum (Al) by solvothermal synthesis; single-phased nano powder of nickel oxide was generated after calcination at$900^{\circ}C$. When the concentration of Al dopant was increased, the reduced intensity was confirmed through XRD analysis. Lattice parameters of the synthesized NiO powder were decreased after treatment of the dopant; parameters were increased when the concentration of Al was over the doping limit (5 mol% Al). The binding energy of $Ni^{2+}$ was chemically shifted to $Ni^{3+}$ by doping $Al^{3+}$ ion, as confirmed by the XPS analysis. The tilted structure of the synthesized NiO with 5 mol% Al dopant and the polycrystalline structure of the $Ni_{0.75}Al_{0.25}O$ were observed by HR-TEM analysis. The electrical conductivity of the newly synthesized NiO was highly improved by Al doping in the conductivity test. The electrical conductivity values of the commercial NiO and the synthesized NiO with 5 mol% Al dopant ($Ni_{0.95}Al_{0.05}O$) were 1,400 s/cm and 2,230 s/cm at $750^{\circ}C$, respectively. However, the electrical conductivity of the synthesized NiO with 10 mol% Al dopant ($Ni_{0.9}Al_{0.1}O$) decreased due to the scattering of free-electrons caused by the large number of impurity atoms; the electrical conductivity of $Ni_{0.9}Al_{0.1}O$ was 545 s/cm at $750^{\circ}C$.

• 한국표면공학회지
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• 제30권4호
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• pp.255-261
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• 1997

Thin film batteries can be used as a micro power source for electronic in which minute power is needed. In this study, lithium phosphorous oxynitride(LIPON) thin films were deposited as an eletrolyte for lithium ion batteries using RF magentron sputtering of lithium phosphate in N2. Ti was also added into the LIPON films as a second network former to enhance the ioinc conductivity of the films. The optimum conditions for LIPON film deposition were sought and the electrolyte with the conductivity of $2.5 \times 10^{-6}$S/cm was obtained at the condition of RF power 4.4 W/$\textrm{cm}^2$, process pressure 10 mtorr and pure nitrogen ambience. Furthermore, the conductivity of LIPON films was increased from $2.5 \times 10^{-6}$S/cm to $8.6 \times 10^{-6}$S/cm by the doping of 2.4at.% Ti. It was also found that by adding Ti to LIPON films, Li content was increased and nitrogen content that reported having the cross-linking effect on LIPON films was also increased as confirmed XPS.